Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PX8746JDNG029XTMA1LED PX8746JDNG029XTMA1 |
8,384 |
|
Datasheet | - | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SSTPAD20 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
4,995 |
|
Datasheet | PAD | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
|
SICRB20650ADIODE SIL CARBIDE 650V 20A D2PAK |
567 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | - | 100 µA @ 650 V | 1190pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
SCS308APC9DIODE SILICON CARBIDE 650V 8A |
125 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
|
1N5818DIODE SCHOTTKY 30V 1A DO15 |
913 |
|
Datasheet | - | DO-204AC, DO-15, Axial | Bulk | Active | Schottky | 30 V | 1A | 875 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 200 V | - | - | - | Through Hole | DO-204AC (DO-15) | -50°C ~ 150°C |
|
JPAD20 TO-92 2LDIODE GEN PURP 35V 10MA TO92 |
1,098 |
|
Datasheet | PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Obsolete | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
|
PAD20 DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
3,000 |
|
Datasheet | PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
S3D20065GDIODE SIC 650V 20A TO263-2 |
565 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 650 V | 1450pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
NXPSC106506QDIODE SIL CARB 650V 10A TO220AC |
3,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC10650X6QDIODE SIL CARB 650V 10A TO220F |
2,995 |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
|
FFSM0865ADIODE SIL CARB 650V 9.6A 4PQFN |
3,000 |
|
Datasheet | - | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 9.6A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
LSIC2SD065A08ADIODE SIL CARB 650V 23A TO220-2L |
1,021 |
|
Datasheet | Gen2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 415pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
NXPSC10650B6JDIODE SIL CARBIDE 650V 10A D2PAK |
2,290 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
SSTPAD10 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
5,955 |
|
Datasheet | PAD | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
|
FFSB1265ADIODE SIL CARB 650V 14A D2PAK-3 |
670 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 14A | 1.75 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 665pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -65°C ~ 175°C |
|
SSTPAD5 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
3,059 |
|
Datasheet | PAD | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 pA @ 20 V | 0.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
|
SICRB12650DIODE SIL CARBIDE 650V 12A D2PAK |
247 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
CDBDSC10650-GDIODE SIL CARBIDE 650V 10A DPAK |
355 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 690pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
PAD10 DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
3,000 |
|
Datasheet | PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
NXPSC126506QDIODE SIL CARB 650V 12A TO220AC |
990 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.