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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
PAD5DFN 8L ROHS Linear Integrated Systems, Inc.

PAD5DFN 8L ROHS

DIODE GEN PURP 30V 10MA 8DFN

Linear Integrated Systems, Inc.

6,078
Datasheet PAD-DFN 8-VFDFN Exposed Pad Tape & Reel (TR) Active Standard 30 V 10mA 1.5 V @ 5 mA Small Signal =< 200mA (Io), Any Speed - 5 pA @ 20 V 1.5pF @ 5V, 1MHz - - Surface Mount 8-DFN (2x2) -55°C ~ 150°C
WNSC6D20650B6J WeEn Semiconductors

WNSC6D20650B6J

DIODE SIL CARBIDE 650V 20A D2PAK

WeEn Semiconductors

4,518
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.55 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 780pF @ 1V, 1MHz - - Surface Mount D2PAK 175°C
S4D20120G SMC Diode Solutions

S4D20120G

DIODE SIL CARB 1.2KV 20A D2PAK

SMC Diode Solutions

388
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 721pF @ 0V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
1N483B Fairchild Semiconductor

1N483B

DIODE GEN PURP 80V 200MA DO35

Fairchild Semiconductor

12,654
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 80 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 60 V - - - Through Hole DO-35 175°C (Max)
S4D10120H SMC Diode Solutions

S4D10120H

DIODE SIL CARB 1.2KV 10A TO247AC

SMC Diode Solutions

507
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 772pF @ 0V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
NXPSC10650Q WeEn Semiconductors

NXPSC10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

1,916
Datasheet - TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
PCFF75H60F onsemi

PCFF75H60F

RECTIFIER WAFER DIE

onsemi

2,240
Datasheet - - Tray Active - - - - - - - - - - - - -
IV1D12005O2 Inventchip

IV1D12005O2

DIODE SIL CARB 1.2KV 17A TO220-2

Inventchip

164
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 17A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 1200 V 320pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
GD30MPS06J GeneSiC Semiconductor

GD30MPS06J

DIODE SIL CARB 650V 51A TO263-7

GeneSiC Semiconductor

540
Datasheet SiC Schottky MPS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active SiC (Silicon Carbide) Schottky 650 V 51A - No Recovery Time > 500mA (Io) - - 735pF @ 1V, 1MHz - - Surface Mount TO-263-7 -55°C ~ 175°C
WNSC2D151200WQ WeEn Semiconductors

WNSC2D151200WQ

DIODE SIL CARB 1.2KV 15A TO247-2

WeEn Semiconductors

4,589
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.7 V @ 15 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 1200 V 700pF @ 1V, 1MHz - - Through Hole TO-247-2 175°C
VS-80EBU04 Vishay General Semiconductor - Diodes Division

VS-80EBU04

DIODE GEN PURP 400V 80A POWIRTAB

Vishay General Semiconductor - Diodes Division

234
Datasheet FRED Pt® PowerTab™, PowIRtab™ Bulk Obsolete Standard 400 V 80A 1.3 V @ 80 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 400 V - - - Chassis Mount PowIRtab™ -
S4D20120A SMC Diode Solutions

S4D20120A

DIODE SIL CARB 1.2KV 20A TO220AC

SMC Diode Solutions

1,043
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 721pF @ 0V, 1MHz - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
NDSH10120C-F155 onsemi

NDSH10120C-F155

SIC DIODE GEN2.0 1200V TO247-2L

onsemi

450
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 12A 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 680pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
NXPSC166506Q WeEn Semiconductors

NXPSC166506Q

DIODE SIL CARB 650V 16A TO220AC

WeEn Semiconductors

3,003
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 534pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C (Max)
PAD5 TO-72 3L Linear Integrated Systems, Inc.

PAD5 TO-72 3L

DIODE GEN PURP 45V 50MA TO72-3

Linear Integrated Systems, Inc.

771
Datasheet PAD TO-72-3 Metal Can Bulk Active Standard 45 V 50mA 1.5 V @ 5 mA Small Signal =< 200mA (Io), Any Speed - 5 pA @ 20 V 0.5pF @ 5V, 1MHz - - Through Hole TO-72-3 -55°C ~ 150°C
NXPSC10650D6J WeEn Semiconductors

NXPSC10650D6J

DIODE SIL CARBIDE 650V 10A DPAK

WeEn Semiconductors

7,204
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
1N3070 Fairchild Semiconductor

1N3070

DIODE GEN PURP 200V 500MA DO35

Fairchild Semiconductor

3,990
Datasheet - DO-204AH, DO-35, Axial Bulk Obsolete Standard 200 V 500mA 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 nA @ 175 V 5pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) 175°C (Max)
RURG8040 Harris Corporation

RURG8040

DIODE AVALANCHE 400V 80A TO247-2

Harris Corporation

7,789
Datasheet - TO-247-2 Bulk Active Avalanche 400 V 80A 1.6 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 500 µA @ 400 V - - - Through Hole TO-247-2 -65°C ~ 175°C
1N6643US Microchip Technology

1N6643US

DIODE GEN PURP 50V 300MA D-5B

Microchip Technology

129
Datasheet - SQ-MELF, E Bulk Active Standard 50 V 300mA 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 50 nA @ 50 V 5pF @ 0V, 1MHz - - Surface Mount D-5B -65°C ~ 175°C
RURU15040RA Harris Corporation

RURU15040RA

150A, 400V ULTRAFAST DIODE

Harris Corporation

420
Datasheet * - Bulk Active - - - - - - - - - - - - -
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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