Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PAD5DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
6,078 |
|
Datasheet | PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
WNSC6D20650B6JDIODE SIL CARBIDE 650V 20A D2PAK |
4,518 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
S4D20120GDIODE SIL CARB 1.2KV 20A D2PAK |
388 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 721pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
1N483BDIODE GEN PURP 80V 200MA DO35 |
12,654 |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 80 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 60 V | - | - | - | Through Hole | DO-35 | 175°C (Max) |
|
S4D10120HDIODE SIL CARB 1.2KV 10A TO247AC |
507 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 772pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
|
NXPSC10650QDIODE SIL CARB 650V 10A TO220AC |
1,916 |
|
Datasheet | - | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
PCFF75H60FRECTIFIER WAFER DIE |
2,240 |
|
Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IV1D12005O2DIODE SIL CARB 1.2KV 17A TO220-2 |
164 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 17A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 320pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GD30MPS06JDIODE SIL CARB 650V 51A TO263-7 |
540 |
|
Datasheet | SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | - | No Recovery Time > 500mA (Io) | - | - | 735pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
WNSC2D151200WQDIODE SIL CARB 1.2KV 15A TO247-2 |
4,589 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 700pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
|
VS-80EBU04DIODE GEN PURP 400V 80A POWIRTAB |
234 |
|
Datasheet | FRED Pt® | PowerTab™, PowIRtab™ | Bulk | Obsolete | Standard | 400 V | 80A | 1.3 V @ 80 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 400 V | - | - | - | Chassis Mount | PowIRtab™ | - |
|
S4D20120ADIODE SIL CARB 1.2KV 20A TO220AC |
1,043 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 721pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC (TO-220-2) | -55°C ~ 175°C |
|
NDSH10120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
450 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 12A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 680pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
NXPSC166506QDIODE SIL CARB 650V 16A TO220AC |
3,003 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
PAD5 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
771 |
|
Datasheet | PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 pA @ 20 V | 0.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
|
NXPSC10650D6JDIODE SIL CARBIDE 650V 10A DPAK |
7,204 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
1N3070DIODE GEN PURP 200V 500MA DO35 |
3,990 |
|
Datasheet | - | DO-204AH, DO-35, Axial | Bulk | Obsolete | Standard | 200 V | 500mA | 1 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 175 V | 5pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | 175°C (Max) |
|
RURG8040DIODE AVALANCHE 400V 80A TO247-2 |
7,789 |
|
Datasheet | - | TO-247-2 | Bulk | Active | Avalanche | 400 V | 80A | 1.6 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 500 µA @ 400 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
1N6643USDIODE GEN PURP 50V 300MA D-5B |
129 |
|
Datasheet | - | SQ-MELF, E | Bulk | Active | Standard | 50 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 50 nA @ 50 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
RURU15040RA150A, 400V ULTRAFAST DIODE |
420 |
|
Datasheet | * | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.