Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
LSIC2SD065D16A DIODE SIL CARBIDE 650V 38A TO263 Littelfuse Inc.	819	RFQ	Datasheet	GEN2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	38A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	730pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
PAD20 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	484	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	20 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
SCS212AGHRC DIODE SIL CARB 650V 12A TO220AC Rohm Semiconductor	1,778	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	438pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
LSIC2SD065E12CCA DIODE SIC 650V 18.5A TO247AD Littelfuse Inc.	500	RFQ	Datasheet	GEN2	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	18.5A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	300pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
PAD10 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	495	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	10 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
PAD2 TO-72 3L DIODE GEN PURP 45V 50MA TO72-3 Linear Integrated Systems, Inc.	497	RFQ	Datasheet	PAD	TO-72-3 Metal Can	Bulk	Active	Standard	45 V	50mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	2 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-72-3	-55°C ~ 150°C
CDBDSC51200-G DIODE SIL CARBIDE 1.2KV 18A DPAK Comchip Technology	411	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	18A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	475pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
IDH10S120AKSA1 DIODE SIL CARB 1.2KV 10A TO220-2 Infineon Technologies	9,194	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 1200 V	500pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
RHRU150100 DIODE GEN PURP 1KV 150A SOT93 Harris Corporation	265	RFQ	Datasheet	-	TO-218-3	Bulk	Active	Standard	1000 V	150A	3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 1000 V	-	-	-	Through Hole	SOT-93	-65°C ~ 175°C
FFSH10120A DIODE SIL CARB 1.2KV 17A TO247-2 onsemi	277	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	17A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH2065A DIODE SIL CARB 650V 25A TO247-2 onsemi	260	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	25A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1085pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
S4D30120G0 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	685	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-2	-
PCDP10120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,984	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	529pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
JANTX1N6638 DIODE GEN PURP 125V 300MA MACOM Technology Solutions	324	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Discontinued at Digi-Key	Standard	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	100 µA @ 125 V	-	Military	MIL-PRF-19500/578 & /609	Surface Mount	D-5D	-65°C ~ 175°C
E6D20065G DIODE SIC 650V 68A TO263 Wolfspeed, Inc.	969	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	68A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	1277pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
RURU10060 DIODE GEN PURP 600V 100A TO218 Harris Corporation	305	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Standard	600 V	100A	1.6 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-218	-65°C ~ 175°C
PCDB10120G1_R2_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,350	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	529pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
PCDD10120G1_L2_00001 1200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,768	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	529pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
JANTXV1N6642US DIODE GEN PURP 100V 300MA D-5B Microchip Technology	108	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	100 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 100 V	-	Military	MIL-PRF-19500/578	Surface Mount	D-5B	-65°C ~ 175°C
IDW30G65C5FKSA1 DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies	7,764	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	1.1 mA @ 650 V	860pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.