Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
64432119AALEAD SET IAP MAP SMAP 1SX & 1DX |
303 |
|
Datasheet | - | - | Box | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
LFUSCD10120ADIODE SIL CARB 1.2KV 10A TO220AC |
500 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
S3D30065GDIODE SIL CARBIDE 650V 84A D2PAK |
414 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 84A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 650 V | 2307pF @ 0V, 100MHz | - | - | Surface Mount | D2PAK | -55°C ~ 175°C |
|
LSIC2SD120E15CCDIODE SIC 1.2KV 24.5A TO247AD |
450 |
|
Datasheet | Gen2 | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 24.5A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 454pF @ 1V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
SCS210AGHRCDIODE SIL CARB 650V 10A TO220AC |
792 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS310AMCDIODE SIL CARB 650V 10A TO220FM |
215 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
IDW10S120FKSA1DIODE SIL CARB 1.2KV 10A TO247-3 |
4,069 |
|
Datasheet | CoolSiC™+ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 1200 V | 580pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
|
SIC05120B-BPDIODE SIL CARB 1.2KV 5A TO220AC |
4,895 |
|
Datasheet | - | TO-220-2 | Tube | Last Time Buy | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | - | 3 µA @ 1200 V | 353pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
FFSPF2065ADIODE SIC 650V 20A TO220F-2FS |
1,284 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1085pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
PCDP08120G1_T0_00001TO-220AC, SIC |
2,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 418pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
NXPSC206506QDIODE SIL CARB 650V 20A TO220AC |
3,041 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
LSIC2SD065A10ADIODE SIL CARB 650V 27A TO220-2L |
1,006 |
|
Datasheet | Gen2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 27A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 470pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
PCDP2065G1_T0_00001TO-220AC, SIC |
2,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 747pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
CDBJFSC101200-GDIODE SIL CARB 1.2KV 10A TO220F |
553 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
|
WNSC2D30650WQSILICON CARBIDE SCHOTTKY DI |
275 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 980pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
WNSC6D20650WQDIODE SIL CARB 650V 20A TO247-2 |
484 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.4 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 1200pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
PAD100 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
460 |
|
Datasheet | PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
|
FFSH3065ADIODE SIL CARB 650V 26A TO247-2 |
2,045 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 26A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1705pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
S4D30120H21200V, 30A, TO-247AC, SIC SCHOTT |
205 |
|
Datasheet | - | TO-247-2 | Tube | Active | Schottky | 1200 V | 94A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 1200 V | 2581pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
PAD50 TO-72 3LDIODE GEN PURP 45V 50MA TO72-3 |
486 |
|
Datasheet | PAD | TO-72-3 Metal Can | Bulk | Active | Standard | 45 V | 50mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-72-3 | -55°C ~ 150°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.