Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDT08S60DIODE SIL CARB 600V 8A TO220-2-2 |
6,617 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 280pF @ 0V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
PCDP1065G1_T0_00001TO-220AC, SIC |
1,478 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDB1065G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
4,000 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
IV1D06006P3DIODE SIC 650V 16.7A TO252-3 |
2,481 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16.7A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 224pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-3 | -55°C ~ 175°C |
|
FFSPF1065ADIODE SIC 650V 10A TO220F-2FS |
930 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
PCDD1065G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,797 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
STPSC1006DDIODE SIL CARB 600V 10A TO220AC |
166 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
WNSC6D16650B6JDIODE SIL CARBIDE 650V 16A D2PAK |
2,665 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.45 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
C6D10065ADIODE SIL CARB 650V 37A TO220-2 |
442 |
|
Datasheet | Z-Rec® | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
STPSC12H065DYDIODE SIL CARB 650V 12A TO220AC |
219 |
|
Datasheet | ECOPACK®2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 650 V | 600pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFH75H60SDIODE GEN PURP 600V 75A TO247-2 |
1,196 |
|
Datasheet | - | TO-247-2 | Tube | Obsolete | Standard | 600 V | 75A | 2.2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
CDBJSC10650-GDIODE SIL CARB 650V 10A TO220F |
472 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 710pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
UJ3D1210KSDDIODE SIL CARB 1.2KV 5A TO247-3 |
528 |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
SSTPAD100 SOT-23 3L ROHSDIODE GEN PURP 30V 10MA SOT23-3 |
6,215 |
|
Datasheet | PAD | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | SOT-23-3 | -55°C ~ 150°C |
|
RURU50100DIODE AVALANCHE 1KV 50A TO218 |
2,668 |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 50A | 1.9 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
JPAD100 TO-92 2L ROHSDIODE GEN PURP 35V 10MA TO92 |
940 |
|
Datasheet | PAD | TO-226-2, TO-92-2 (TO-226AC) | Bulk | Active | Standard | 35 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Through Hole | TO-92 | -55°C ~ 150°C |
|
PAD100 DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
2,990 |
|
Datasheet | PAD-DFN | 8-VFDFN Exposed Pad | Cut Tape (CT) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
PCFFS4065AFDIODE SIL CARBIDE 650V 40A DIE |
1,364 |
|
Datasheet | - | Die | Tray | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1989pf @ 1V, 100kHz | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
PAD50DFN 8L ROHSDIODE GEN PURP 30V 10MA 8DFN |
3,000 |
|
Datasheet | PAD-DFN | 8-VFDFN Exposed Pad | Tape & Reel (TR) | Active | Standard | 30 V | 10mA | 1.5 V @ 5 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 pA @ 20 V | 1.5pF @ 5V, 1MHz | - | - | Surface Mount | 8-DFN (2x2) | -55°C ~ 150°C |
|
LSIC2SD065C08ADIODE SIL CARB 650V 23A TO252 |
2,288 |
|
Datasheet | Gen2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 415pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.