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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
MUR3010PT Harris Corporation

MUR3010PT

DIODE GEN PURP 100V 30A TO218

Harris Corporation

109
Datasheet - TO-218-3 Bulk Active Standard 100 V 30A - Standard Recovery >500ns, > 200mA (Io) - - - - - Through Hole TO-218 -
RURU10040 Harris Corporation

RURU10040

DIODE AVALANCHE 400V 100A TO218

Harris Corporation

1,406
Datasheet - TO-218-1 Bulk Active Avalanche 400 V 100A 1.6 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 500 µA @ 400 V - - - Chassis Mount TO-218 -65°C ~ 175°C
RHRU10050 Harris Corporation

RHRU10050

DIODE GEN PURP 500V 100A TO218

Harris Corporation

209
Datasheet - TO-218-1 Bulk Active Standard 500 V 100A 2.1 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 µA @ 500 V - - - Chassis Mount TO-218 -65°C ~ 175°C
RURG5040 Harris Corporation

RURG5040

DIODE AVALANCHE 400V 50A TO247-2

Harris Corporation

5,463
Datasheet - TO-247-2 Bulk Active Avalanche 400 V 50A 1.6 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 500 µA @ 400 V - - - Through Hole TO-247-2 -65°C ~ 175°C
MUR60120BS-BP Micro Commercial Co

MUR60120BS-BP

DIODE GEN PURP 1.2KV 60A TO247AD

Micro Commercial Co

1,225
Datasheet - TO-247-2 Tube Active Standard 1200 V 60A 3.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 5 µA @ 1200 V 170pF @ 4V, 1MHz - - Through Hole TO-247AD -55°C ~ 150°C
FFSD0865A onsemi

FFSD0865A

DIODE SIL CARBIDE 650V 15A DPAK

onsemi

2,500
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 15A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 463pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
NXPSC06650D6J WeEn Semiconductors

NXPSC06650D6J

DIODE SIL CARBIDE 650V 6A DPAK

WeEn Semiconductors

5,450
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz - - Surface Mount DPAK 175°C (Max)
WND60P16WQ WeEn Semiconductors

WND60P16WQ

DIODE GEN PURP 1.6KV 60A TO247-2

WeEn Semiconductors

463
Datasheet - TO-247-2 Tube Active Standard 1600 V 60A 1.12 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1600 V - - - Through Hole TO-247-2 -55°C ~ 150°C
PCDB0865G1_R2_00001 Panjit International Inc.

PCDB0865G1_R2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,390
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 296pF @ 1V, 1MHz - - Surface Mount TO-263 -55°C ~ 175°C
PCDD0865G1_L2_00001 Panjit International Inc.

PCDD0865G1_L2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,977
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 296pF @ 1V, 1MHz - - Surface Mount TO-252AA -55°C ~ 175°C
RURU8070 Harris Corporation

RURU8070

DIODE AVALANCHE 700V 80A TO218

Harris Corporation

1,097
Datasheet - TO-218-1 Bulk Active Avalanche 700 V 80A 1.9 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 500 µA @ 700 V - - - Chassis Mount TO-218 -65°C ~ 175°C
RURU8080 Harris Corporation

RURU8080

DIODE AVALANCHE 800V 80A TO218

Harris Corporation

274
Datasheet - TO-218-1 Bulk Active Avalanche 800 V 80A 1.9 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 500 µA @ 800 V - - - Chassis Mount TO-218 -65°C ~ 175°C
PCDP0865G1_T0_00001 Panjit International Inc.

PCDP0865G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,995
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 296pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
BYC75W-600PQ WeEn Semiconductors

BYC75W-600PQ

DIODE GEN PURP 600V 75A TO247-2

WeEn Semiconductors

851
Datasheet - TO-247-2 Tube Active Standard 600 V 75A 2.75 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
AS3D020065A ANBON SEMICONDUCTOR (INT'L) LIMITED

AS3D020065A

650V,20A SILICON CARBIDE SCHOTTK

ANBON SEMICONDUCTOR (INT'L) LIMITED

137
Datasheet - TO-220-2 Bulk Active SiC (Silicon Carbide) Schottky 650 V 56A 1.65 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 1190pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
1N486B onsemi

1N486B

DIODE GEN PURP 250V 200MA DO35

onsemi

14,945
Datasheet - DO-204AH, DO-35, Axial Bulk Active Standard 250 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 50 nA @ 225 V - - - Through Hole DO-204AH (DO-35) 175°C
SIC1060P-BP Micro Commercial Co

SIC1060P-BP

DIODE SIL CARB 650V 10A TO220AC

Micro Commercial Co

4,898
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 44 µA @ 650 V 36pF @ 400V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
STPSC10H065DY STMicroelectronics

STPSC10H065DY

DIODE SIL CARB 650V 10A TO220AC

STMicroelectronics

1,108
Datasheet ECOPACK®2 TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 480pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
ADC6D10065E Analog Power Inc.

ADC6D10065E

DIODE SIL SIC 650V 35A TO252-2

Analog Power Inc.

1,500
Datasheet WBG TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 35A 1.8 V @ 2 A No Recovery Time > 500mA (Io) - 2 µA @ 650 V 6.3pF @ 0V, 100kHz - - Surface Mount TO-252-2 -55°C ~ 175°C
PX8244HDMG008XTMA1 Infineon Technologies

PX8244HDMG008XTMA1

LED PX8244HDMG008XTMA1

Infineon Technologies

8,000
Datasheet - - Bulk Obsolete - - - - - - - - - - - - -
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

BOM & COMPONENT SOURCING

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