Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PCDP05120G1_T0_00001TO-220AC, SIC |
1,943 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 252pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP1265G1_T0_00001TO-220AC, SIC |
2,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 452pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
NXPSC06650X6QDIODE SIL CARBIDE 650V 6A TO220F |
197 |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
|
IDH10S60CAKSA1DIODE SIL CARB 600V 10A TO220-2 |
6,184 |
|
Datasheet | CoolSiC™+ | TO-220-2 | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
PCDP0665G1_T0_00001TO-220AC, SIC |
1,998 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 228pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
WND45P16WQDIODE GEN PURP 1.6KV 45A TO247-2 |
1,008 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1600 V | 45A | 1.4 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Through Hole | TO-247-2 | 150°C |
|
MUR6060B-BPDIODE GEN PURP 600V 60A TO247AD |
512 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.7 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 15 µA @ 600 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
FFSB0465ADIODE SIL CARB 650V 7.7A D2PAK-2 |
770 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 7.7A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
CDBJFSC5650-GDIODE SIL CARBIDE 650V 5A TO220F |
346 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 430pF @ 0V, 1MHz | - | - | Through Hole | TO-220F | -55°C ~ 175°C |
|
|
SICRF10650DIODE SIL CARB 650V 10A ITO220AC |
194 |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 695pF @ 0V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
PSDH6060L1_T0_00001TO-247AD-2LD, FAST |
1,425 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 600 V | 60A | 1.75 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 205 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
MBRB2515LT4GDIODE SCHOTTKY 15V 25A D2PAK |
214 |
|
Datasheet | SWITCHMODE™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 15 V | 25A | 450 mV @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15 mA @ 15 V | - | - | - | Surface Mount | D2PAK | 100°C (Max) |
|
S3D20065EDIODE SCHOTTKY SILICON CARBIDE S |
2,500 |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | 5-DFN (8x8) | - |
|
STPSC6H12B-TR1DIODE SIL CARBIDE 1.2KV 6A DPAK |
7,403 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 6A | 1.9 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 330pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -40°C ~ 175°C |
|
|
VS-100BGQ030DIODE SCHOTTKY 30V 100A POWIRTAB |
144 |
|
Datasheet | - | PowerTab™, PowIRtab™ | Bulk | Obsolete | Schottky | 30 V | 100A | 580 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.4 mA @ 30 V | - | - | - | Chassis Mount | PowIRtab™ | -55°C ~ 150°C |
|
RHRU75100DIODE AVALANCHE 1KV 75A TO218 |
149 |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 1000 V | 75A | 3 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 500 µA @ 1000 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
RHRU7540DIODE AVALANCHE 400V 75A TO218 |
549 |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 400 V | 75A | 2.1 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 500 µA @ 400 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
FFSPF0665ADIODE SIC 650V 6A TO220F-2FS |
898 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
IV1D06006O2DIODE SIL CARB 650V 17.4A TO220 |
0 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 17.4A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 212pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
CDBD2SC21200-GDIODE SIL CARB 1.2KV 6.2A TO263 |
381 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 6.2A | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 136pF @ 0V, 1MHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.