Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PSDB3060L1_T0_00001TO-263, FRED |
1,658 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 250 µA @ 600 V | - | - | - | Surface Mount | TO-263 | -55°C ~ 150°C |
|
WNSC2D10650BJDIODE SIL CARBIDE 650V 10A D2PAK |
8,768 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 310pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
PSDH30120L1_T0_00001TO-247AD-2LD, FAST |
1,460 |
|
Datasheet | - | TO-247-2 | Tube | Not For New Designs | Standard | 1200 V | 30A | 2.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 240 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
PSDH30120S1_T0_00001TO-247AD-2LD, FAST |
1,388 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 30A | 3.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247AD-2 | -55°C ~ 150°C |
|
S4D10120G0DIODE SCHOTTKY SILICON CARBIDE S |
800 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 772pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
S4D10120G1200V, 10A, D2PAK, SIC SCHOTTKY |
133 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-2 | - |
|
WNSC2D12650TJDIODE SIL CARBIDE 650V 12A 5DFN |
2,985 |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
SCS310AHGC9DIODE SIL CARB 650V 10A TO220ACP |
361 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACP | 175°C (Max) |
|
RURU5060DIODE AVALANCHE 600V 50A TO218 |
3,504 |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 600 V | 50A | 1.6 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 500 µA @ 600 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
RURG8050DIODE AVALANCHE 500V 80A TO247-2 |
481 |
|
Datasheet | - | TO-247-2 | Bulk | Active | Avalanche | 500 V | 80A | 1.6 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 500 µA @ 500 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
RURU8040DIODE AVALANCHE 400V 80A TO218 |
3,000 |
|
Datasheet | - | TO-218-1 | Bulk | Active | Avalanche | 400 V | 80A | 1.6 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 500 µA @ 400 V | - | - | - | Chassis Mount | TO-218 | -65°C ~ 175°C |
|
WNSC12650T6JDIODE SIL CARBIDE 650V 12A 5DFN |
2,998 |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
|
IDT10S60CDIODE SIL CARB 600V 10A TO220-2 |
1,479 |
|
Datasheet | thinQ!™ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 10A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
SICU0460B-TPDIODE SIL CARBIDE 650V 4A DPAK |
2,413 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | - | 15 µA @ 650 V | 200pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
FFSH1665ADIODE SIL CARB 650V 23A TO247-2 |
8,896 |
|
Datasheet | - | TO-247-2 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 887pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 150°C |
|
FFSP0465ADIODE SIL CARB 650V 8.6A TO220-2 |
792 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8.6A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
NXPSC066506QDIODE SIL CARB 650V 6A TO220AC |
3,000 |
|
Datasheet | - | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
PCDD0665G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE |
2,976 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 228pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
NXPSC06650B6JDIODE SIL CARBIDE 650V 6A D2PAK |
3,188 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
PCDB0665G1_R2_00001650V SIC SCHOTTKY BARRIER DIODE |
800 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 228pF @ 1V, 1MHz | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.