Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-3C10CP12L-M3 10A 1200V SIC ZERO QRR DUAL TJMA Vishay General Semiconductor - Diodes Division	500	RFQ	Datasheet	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	-	30 µA @ 1200 V	20pF @ 800V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
SCS205KNHRTRL 1200V 5A SMD SILICON CARBIDE Rohm Semiconductor	200	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	260pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
BSDV10G120E2 DIOD SCHOT SIC 1200V 10A TO247-2 Bourns Inc.	2,994	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	481pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
SCS310AGC16 DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor	1,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACFP	175°C
PCDG10120GB_L2_00601 SIC DIODE 1200V/10A IN TO-252AA Panjit International Inc.	6,000	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
SDS065J016H3-ISATH DIODE 650V-16A TO247-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	44A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	48 µA @ 650 V	837pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
IDWD120E120D7XKSA1 DIODE GEN PURP 1200V 177A TO247 Infineon Technologies	129	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	177A	3 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	215 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
SIT20C065 DIODE SIL CARB 650V 20A TO220AC Diotec Semiconductor	970	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
SDS120J010E3-ISARH DIODE 1200V-10A TO263-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2L	-55°C ~ 175°C
VS-90EPF12L-M3 DIODE GEN PURP 1.2KV 90A TO247AD Vishay General Semiconductor - Diodes Division	466	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	90A	1.38 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
PCDF0865G1_T0_00601 650V/8A THROUGH HOLE SILICON CAR Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
FFSH3065B DIODE SIL CARB 650V 37A TO247-2 onsemi	326	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	37A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1260pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
SDS065J020D3-ISARH DIODE 650V-20A TO252-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
PCDP0865GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.6 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	372pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1065GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,961	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	271pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PSC1665JJ SIC DIODES AND FETS Nexperia USA Inc.	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	180 µA @ 650 V	475pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK R2P	-55°C ~ 175°C
PCDD1065GB_L2_00601 650V/10A IN TO-252AA PACKAGE SIL Panjit International Inc.	3,000	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	610pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
VS-30EPF10-M3 DIODE GP 1KV 30A TO247AC Vishay General Semiconductor - Diodes Division	326	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1000 V	30A	1.41 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
JAN1N5809 DIODE GEN PURP 100V 6A AXIAL Microchip Technology	117	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
FFSP15120A DIODE SIL CARB 1.2KV 15A TO220L onsemi	574	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.75 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	936pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.