Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RFUH20TJ6SFHGC9SUPER FAST RECOVERY DIODE : RFUH |
1,000 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | Standard | 600 V | 20A | 2.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 220 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220ACFP | 150°C |
|
TRS12V65H,LQG3 SIC-SBD 650V 12A DFN8X8 |
4,472 |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
SDS120J005C3-ISATHDIODE 1200V-5A TO220-2L |
200 |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 22A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 400pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
VS-3C10EV07T-M3/ISIC-G3-SLIMDPAK 2L |
4,391 |
|
Datasheet | eSMP® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 445pF @ 1V, 1MHz | - | - | Surface Mount | SlimDPAK | -55°C ~ 175°C |
|
S6D20065ADIODE SCHOTTKY SILICON CARBIDE S |
250 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 61A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
S3D15065IDIODE SCHOTTKY SILICON CARBIDE S |
990 |
|
Datasheet | - | TO-220-2 Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 42A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 650 V | 1243pF @ 0V, 1MHz | - | - | Through Hole | TO-220-Isolation | -55°C ~ 175°C |
|
SDS065J010D3-ISARHDIODE 650V-10A TO252-2L |
300 |
|
Datasheet | Sanan TO263 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
S3D15065HDIODE SCHOTTKY SILICON CARBIDE S |
300 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 42A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 650 V | 1243pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
TRS12E65H,S1QG3 SIC-SBD 650V 12A TO-220-2L |
370 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
BSDD10G65E2DIODE SCHOT SIC 650V 10A TO252 |
9,660 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 323pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
IDWD50E120D7XKSA1DIODE GEN PURP 1200V 81A TO247-2 |
230 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 81A | 3 V @ 50 A | Fast Recovery =< 500ns, > 5A (Io) | 160 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
SDS065J010C3-ISATHDIODE 650V-10A TO220-2L |
290 |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
SDS120J010C3-ISATHDIODE 1200V-10A TO220-2L |
200 |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 780pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
FFSB0665ADIODE SIL CARB 650V 9A D2PAK-3 |
800 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSP2065BDIODE SIL CARB 650V 22.5A TO220 |
397 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.5A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
SDS065J010E3-ISARHDIODE 650V-10A TO263-2L |
300 |
|
Datasheet | Sanan TO263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
|
BSDH10G120E2DIODE SIC 1200V 10A TO220-2 |
2,929 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 1200 V | 481pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
PCDP0465GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
1,931 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
IDK08G65C5XTMA2DIODE SIL CARB 650V 8A TO263-2 |
959 |
|
Datasheet | CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | - | 250pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
|
FFSD1065B-F085DIODE SIL CARB 650V 13.5A DPAK |
1,968 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.