Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDWD120E65E7XKSA1 DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies	210	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	150A	2.1 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	98 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
VS-65EPS16L-M3 DIODE GEN PURP 1.6KV 65A TO247AD Vishay General Semiconductor - Diodes Division	184	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
C6D08065E-TR SIC, SCHOTTKY DIODE, 8A, 650V, T Wolfspeed, Inc.	2,370	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	29A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
C6D08065G-TR SIC, SCHOTTKY DIODE, 8A, 650V, T Wolfspeed, Inc.	2,300	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.4 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	518pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
C3D08065E-TR DIODE SIL CARB 650V 25.5A TO252 Wolfspeed, Inc.	2,190	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	25.5A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	395pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
STPSC12065D DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	749	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
SDS120J010D3-ISARH DIODE 1200V-10A TO252-2L Luminus Devices Inc.	200	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
BSDD10S65E6 DIODE SCHOT SIC 650V 10A TO252 Bourns Inc.	4,995	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
BSDB10S65E6 DIODE SCHOT SIC 650V 10A TO263 Bourns Inc.	3,170	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
BSDL10S65E6 DIODE SIC SCHTKY 650V 10A DFN8X8 Bourns Inc.	2,697	RFQ	Datasheet	-	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
FFSM1265A DIODE SIL CARB 650V 12.5A 4PQFN onsemi	2,585	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12.5A	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
PSC1065KQ PSC1065K/SOT8021/TO220-2L Nexperia USA Inc.	974	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	340pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	175°C
IDWD60E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	187	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	100A	2.1 V @ 60 A	Fast Recovery =< 500ns, > 5A (Io)	99 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD75E120D7XKSA1 DIODE GEN PURP 1200V 116A TO247 Infineon Technologies	235	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	116A	3 V @ 75 A	Fast Recovery =< 500ns, > 5A (Io)	195 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
VS-3C05ET12S2L-M3 5A 1200V SIC ZERO QRR SINGLE TJM Vishay General Semiconductor - Diodes Division	796	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.5 V @ 5 A	No Recovery Time > 500mA (Io)	-	30 µA @ 1200 V	20pF @ 800V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
IDWD75E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	210	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	100A	2.1 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	97 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
SDS065J012S3-ISARH DIODE 650V-12A DFN8*8-4L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan DFN8	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	44A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	651pF @ 0V, 1MHz	-	-	Surface Mount	4-DFN (8x8)	-55°C ~ 175°C
PCDP0865GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
APT60D120SG DIODE GEN PURP 1.2KV 60A D3 Microchip Technology	156	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	250 µA @ 1200 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
FFSB2065B DIODE SIL CARB 650V 22.8A D2PAK onsemi	2,178	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	22.8A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.