Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-3C10ET12T-M3 10A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	915	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	-	60 µA @ 1200 V	38pF @ 800V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SDS120J010H3-ISATH DIODE 1200V-10A TO247-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	36A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	780pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
SCS215ANHRTRL 650V 15A SMD SILICON CARBIDE Rohm Semiconductor	500	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263L	175°C
JANTX1N914UR DIODE GEN PURP 75V 200MA DO213AA Microchip Technology	233	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Standard	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-PRF-19500/116	Surface Mount	DO-213AA	-65°C ~ 175°C
TSCDT16065G1 DIODE SCHOTTKY 650V 16A TO220AC Taiwan Semiconductor Corporation	994	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	70pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
IDWD140E120D7XKSA1 DIODE GEN PURP 1200V 207A TO247 Infineon Technologies	167	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	207A	3 V @ 140 A	Fast Recovery =< 500ns, > 5A (Io)	225 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
TSCDF16065G1 DIODE SCHOTTKY 650V 16A ITO220AC Taiwan Semiconductor Corporation	1,000	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	70pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
1N3070-1 DIODE GEN PURP 175V 100MA DO7 Microchip Technology	257	RFQ	Datasheet	-	DO-204AA, DO-7, Axial	Bulk	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	-	-	-	-	Through Hole	DO-7	-65°C ~ 175°C
SDS065J020H3-ISATH DIODE 650V-20A TO247-2L Luminus Devices Inc.	190	RFQ	Datasheet	Sanan TO247	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	51A	1.5 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1018pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
1N3070UR-1/TR SIGNAL OR COMPUTER DIODE Microchip Technology	135	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 175 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C
PCDF1065G1_T0_00601 650V/10A THROUGH HOLE SILICON CA Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
VS-3C15ET12T-M3 15A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	1,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	15A	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	-	75 µA @ 1200 V	56pF @ 800V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SCS212AJTLL DIODE SIL CARB 650V 12A TO263AB Rohm Semiconductor	960	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.55 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	240 µA @ 600 V	-	-	-	Surface Mount	TO-263AB	175°C (Max)
PCDP1065GB_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	1,975	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	446pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-1N1183A DIODE GEN PURP 50V 40A DO203AB Vishay General Semiconductor - Diodes Division	204	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	50 V	40A	1.3 V @ 126 A	Standard Recovery >500ns, > 200mA (Io)	-	2.5 mA @ 50 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 200°C
TSCDF20065G1 DIODE SCHOTTKY 650V 20A ITO220AC Taiwan Semiconductor Corporation	992	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	92.7pF @ 400V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
TSCDT20065G1 DIODE SCHOTTKY 650V 20A TO220AC Taiwan Semiconductor Corporation	967	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	650 V	20A	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	92.7pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-3C10ET12S2L-M3 10A 1200V SIC ZERO QRR SINGLE TJ Vishay General Semiconductor - Diodes Division	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	-	60 µA @ 1200 V	38pF @ 800V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
S5D10170H2 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	294	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	44A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	978pF @ 0V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
PCDP1265GC_T0_00601 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	372pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.