Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
E6D16065HDIODE SIC 650V TO247 |
444 |
|
Datasheet | E | TO-247-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1017pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
S3D50065FDIODE SCHOTTKY SILICON CARBIDE S |
294 |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 680 V | 112A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 680 V | 3120pF @ 0V, 100MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
PCDP1665GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.8 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 446pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
VS-3C15ET12S2L-M315A 1200V SIC ZERO QRR SINGLE TJ |
800 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 1200 V | 56pF @ 800V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -55°C ~ 175°C |
|
VS-3C20ET12T-M320A 1200V SIC ZERO QRR SINGLE TJ |
1,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 110 µA @ 1200 V | 73pF @ 800V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
S4D40120FDIODE SCHOTTKY SILICON CARBIDE S |
500 |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Active | - | - | - | - | - | - | - | - | - | - | Through Hole | ITO-220AC | - |
|
S4D30120F1200V, 30A, ITO-220AC, SIC SCHOT |
250 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SDS120J020H3-ISATHDIODE 1200V-20A TO247-2L |
297 |
|
Datasheet | Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 63A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 1565pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
VS-3C20EP12L-M320A 1200V SIC ZERO QRR SINGLE TJ |
500 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 110 µA @ 1200 V | 73pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-3C20CP12L-M320A 1200V SIC ZERO QRR DUAL TJMA |
500 |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
1N5418USDIODE GEN PURP 400V 3A D-5B |
102 |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
PCDP2065GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.8 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
PCDP1665GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.6 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 995pF @ 1V, 100kHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
SCS230ANHRTRL650V, 30A, SMD, SILICON-CARBIDE |
892 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.55 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 600 V | 1090pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
|
PCDP20120GB_T0_00601SIC DIODE 1200V/20A IN TO-220AC |
2,000 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
C6D20065D1SIC, SCHOTTKY DIODE, 64A, 650V, |
866 |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 64A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
C6D20065HSIC, SCHOTTKY DIODE,66A, 650V, T |
365 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 66A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
S4D30120HDIODE SIL CARB 1.2KV 94A TO247AC |
1,170 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 94A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 2581pF @ 0V, 1MHz | - | - | Through Hole | TO-247AC | -55°C ~ 175°C |
|
VS-3C30EP12L-M330A 1200V SIC ZERO QRR SINGLE TJ |
494 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.5 V @ 30 A | No Recovery Time > 500mA (Io) | - | 130 µA @ 1200 V | 124pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
FFSH5065B-F155650V 50A SIC SBD GEN 1.5 |
435 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 48A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 2030pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.