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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
E6D16065H Wolfspeed, Inc.

E6D16065H

DIODE SIC 650V TO247

Wolfspeed, Inc.

444
Datasheet E TO-247-2 Bulk Last Time Buy SiC (Silicon Carbide) Schottky 650 V 51A 1.5 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 1017pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
S3D50065F SMC Diode Solutions

S3D50065F

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

294
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 680 V 112A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 680 V 3120pF @ 0V, 100MHz - - Through Hole ITO-220AC -55°C ~ 175°C
PCDP1665GC_T0_00601 Panjit International Inc.

PCDP1665GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.8 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 446pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
VS-3C15ET12S2L-M3 Vishay General Semiconductor - Diodes Division

VS-3C15ET12S2L-M3

15A 1200V SIC ZERO QRR SINGLE TJ

Vishay General Semiconductor - Diodes Division

800
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 15A 1.5 V @ 15 A No Recovery Time > 500mA (Io) - 75 µA @ 1200 V 56pF @ 800V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-3C20ET12T-M3 Vishay General Semiconductor - Diodes Division

VS-3C20ET12T-M3

20A 1200V SIC ZERO QRR SINGLE TJ

Vishay General Semiconductor - Diodes Division

1,000
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) - 110 µA @ 1200 V 73pF @ 800V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
S4D40120F SMC Diode Solutions

S4D40120F

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

500
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active - - - - - - - - - - Through Hole ITO-220AC -
S4D30120F SMC Diode Solutions

S4D30120F

1200V, 30A, ITO-220AC, SIC SCHOT

SMC Diode Solutions

250
Datasheet - - Tube Active - - - - - - - - - - - - -
SDS120J020H3-ISATH Luminus Devices Inc.

SDS120J020H3-ISATH

DIODE 1200V-20A TO247-2L

Luminus Devices Inc.

297
Datasheet Sanan TO247 TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 63A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 1565pF @ 0V, 1MHz - - Through Hole TO-247-2L -55°C ~ 175°C
VS-3C20EP12L-M3 Vishay General Semiconductor - Diodes Division

VS-3C20EP12L-M3

20A 1200V SIC ZERO QRR SINGLE TJ

Vishay General Semiconductor - Diodes Division

500
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) - 110 µA @ 1200 V 73pF @ 800V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
VS-3C20CP12L-M3 Vishay General Semiconductor - Diodes Division

VS-3C20CP12L-M3

20A 1200V SIC ZERO QRR DUAL TJMA

Vishay General Semiconductor - Diodes Division

500
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 1200 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) - 60 µA @ 1200 V 38pF @ 800V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
1N5418US Microchip Technology

1N5418US

DIODE GEN PURP 400V 3A D-5B

Microchip Technology

102
Datasheet - SQ-MELF, B Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - - - Surface Mount B, SQ-MELF -65°C ~ 175°C
PCDP2065GC_T0_00601 Panjit International Inc.

PCDP2065GC_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 529pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
PCDP1665GB_T0_00601 Panjit International Inc.

PCDP1665GB_T0_00601

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,000
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.6 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V 995pF @ 1V, 100kHz - - Through Hole TO-220AC -55°C ~ 175°C
SCS230ANHRTRL Rohm Semiconductor

SCS230ANHRTRL

650V, 30A, SMD, SILICON-CARBIDE

Rohm Semiconductor

892
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 30A 1.55 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 600 V 1090pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount LPDS 175°C
PCDP20120GB_T0_00601 Panjit International Inc.

PCDP20120GB_T0_00601

SIC DIODE 1200V/20A IN TO-220AC

Panjit International Inc.

2,000
Datasheet - - Tube Active - - - - - - - - - - - - -
C6D20065D1 Wolfspeed, Inc.

C6D20065D1

SIC, SCHOTTKY DIODE, 64A, 650V,

Wolfspeed, Inc.

866
Datasheet - TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 64A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V - - - Through Hole TO-247-3 -55°C ~ 175°C
C6D20065H Wolfspeed, Inc.

C6D20065H

SIC, SCHOTTKY DIODE,66A, 650V, T

Wolfspeed, Inc.

365
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 66A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V - - - Through Hole TO-247-2 -55°C ~ 175°C
S4D30120H SMC Diode Solutions

S4D30120H

DIODE SIL CARB 1.2KV 94A TO247AC

SMC Diode Solutions

1,170
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 94A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 2581pF @ 0V, 1MHz - - Through Hole TO-247AC -55°C ~ 175°C
VS-3C30EP12L-M3 Vishay General Semiconductor - Diodes Division

VS-3C30EP12L-M3

30A 1200V SIC ZERO QRR SINGLE TJ

Vishay General Semiconductor - Diodes Division

494
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 30A 1.5 V @ 30 A No Recovery Time > 500mA (Io) - 130 µA @ 1200 V 124pF @ 800V, 1MHz - - Through Hole TO-247AD -55°C ~ 175°C
FFSH5065B-F155 onsemi

FFSH5065B-F155

650V 50A SIC SBD GEN 1.5

onsemi

435
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 48A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 2030pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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