Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3600UR/TRSIGNAL OR COMPUTER DIODE |
177 |
|
Datasheet | - | DO-213AA | Tape & Reel (TR) | Active | Standard | 75 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | 2.5pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
FFSB1065ADIODE SCHOTTKY 650V 14A D2PAK-3 |
800 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 14A | 1.75 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
VS-65EPF12L-M3DIODE GEN PURP 1.2KV 65A TO247AD |
480 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 65A | 1.42 V @ 65 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1200 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
PCDP0665GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.6 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 271pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
C3D10060G-TRDIODE SIL CARB 600V 29A TO263-2 |
523 |
|
Datasheet | Z-Rec® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 29A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 600 V | 480pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
VS-3C10EP12L-M310A 1200V SIC ZERO QRR SINGLE TJ |
500 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | - | 60 µA @ 1200 V | 38pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
TSCDT12065G1DIODE SCHOTTKY 650V 12A TO220AC |
990 |
|
Datasheet | - | TO-220-2 | Tube | Active | Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 55.3pF @ 400V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
TSCDF12065G1DIODE SCHOTTKY 650V 12A ITO220AC |
1,000 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 650 V | 55.3pF @ 400V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
E6D10065GWOLFSPEED SIC, SCHOTTKY DIODE |
1,000 |
|
Datasheet | E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 32A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 630pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
SCS210ANHRTRL650V, 10A, SMD, SILICON-CARBIDE |
870 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 360pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
|
IDWD100E120D7XKSA1DIODE GEN PURP 1200V 146A TO247 |
224 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 1200 V | 146A | 3 V @ 100 A | Fast Recovery =< 500ns, > 5A (Io) | 205 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
C6D10065E-TRSIC, SCHOTTKY DIODE, 10A, 650V, |
4,750 |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 35A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 611pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
C3D10065E-TRDIODE SIL CARB 650V 32A TO252-2 |
2,050 |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 32A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 460.5pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
PCDD0865GB_L2_00601650V/8A IN TO-252AA PACKAGE SILI |
2,990 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 527pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
IDWD100E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 |
232 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 100 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
VS-90EPS08L-M3DIODE GEN PURP 800V 90A TO247AD |
465 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 800 V | 90A | 1.2 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Through Hole | TO-247AD | -40°C ~ 150°C |
|
IDFW40E65D1EXKSA1DIODE GP 650V 42A TO247-3-AI |
210 |
|
Datasheet | - | TO-247-3 | Tube | Active | Standard | 650 V | 42A | 2.1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 76 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3-AI | -40°C ~ 175°C |
|
SCS310AMC7GDIODE SIL CARB 650V 10A TO220FM |
1,000 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
SCS212ANHRTRL650V 12A SMD SILICON CARBIDE |
1,000 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.55 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 240 µA @ 600 V | 440pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | TO-263L | 175°C |
|
FFSP3065B-F085DIODE SIL CARB 650V 30A TO220-2 |
1,600 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1280pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.