Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SDS120J015H3-ISATHDIODE 1200V-15A TO247-2L |
150 |
|
Datasheet | Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 51A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 1200 V | 1182pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
E6D20065ADIODE SIC 650V TO220 |
990 |
|
Datasheet | E | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 68A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 1277pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
VS-3C15EP12L-M315A 1200V SIC ZERO QRR SINGLE TJ |
500 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 1200 V | 56pF @ 800V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
PSC1665LQSIC DIODES AND FETS |
450 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 475pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
E6D16065GDIODE SIC 650V 51A TO263 |
966 |
|
Datasheet | E | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1017pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
E6D16065D1WOLFSPEED SIC, SCHOTTKY DIODE |
440 |
|
Datasheet | E | TO-247-3 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 51A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1017pF @ 0V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
E6D16065ASIC, SCHOTTKY DIODE |
984 |
|
Datasheet | E | TO-220-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 54A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 1026pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
SCS320AMC7GDIODE SIL CARB 650V 20A TO220FM |
1,000 |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 1000pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C |
|
E6D20065HDIODE SIC 650V TO247 |
450 |
|
Datasheet | E | TO-247-2 | Bulk | Last Time Buy | SiC (Silicon Carbide) Schottky | 650 V | 59A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 75 µA @ 650 V | 1277pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
SDS120J015C3-ISATHDIODE 1200V-15A TO220-2L |
150 |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 51A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 1200 V | 1182pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
S3D40065D1DIODE SCHOTTKY SILICON CARBIDE S |
297 |
|
Datasheet | - | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 128A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 3100pF @ 0V, 1MHz | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
PCDP15120GB_T0_00601SIC DIODE 1200V/15A IN TO-220AC |
2,000 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PCDP1265GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE |
2,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.6 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
C4D08120E-TRDIODE SIL CARB 1.2KV 24.5A TO252 |
2,433 |
|
Datasheet | Z-Rec® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 24.5A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 560pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
C6D16065H53A, 650V SILICON CARBIDE SCHOTT |
200 |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 53A | 1.5 V @ 16 A | No Recovery Time > 500mA (Io) | - | 25 µA @ 650 V | 1017pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
SCS320AGC16DIODE SIL CARB 650V 20A TO220ACP |
1,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 1000pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACFP | 175°C |
|
SDS120J027H3-ISATHDIODE 1200V-27A TO247-2L |
150 |
|
Datasheet | Sanan TO247 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 77A | 1.8 V @ 27 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 1761pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
SCS220ANHRTRL650V, 20A, SMD, SILICON-CARBIDE |
1,000 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
|
SCS210KNHRTRL1200V, 10A, SMD, SILICON-CARBIDE |
994 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 530pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | LPDS | 175°C |
|
JANTX1N5809USDIODE GEN PURP 100V 3A B SQ-MELF |
108 |
|
Datasheet | - | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.