FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVBG040N120M3SSILICON CARBIDE (SIC) MOSFET-ELI |
760 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 57A (Tc) | 18V | 54mOhm @ 20A, 18V | 4.4V @ 10mA | 75 nC @ 18 V | +22V, -10V | 1700 pF @ 800 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
|
AIMZHN120R040M1TXKSA1SIC_DISCRETE |
240 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V, 20V | 50mOhm @ 20A, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | +23V, -5V | 1264 pF @ 800 V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
|
G3F25MT12J-TR1200V 25M TO-263-7 G3F SIC MOSFE |
800 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 87A (Tc) | 18V | 34mOhm @ 34A, 18V | 4.3V @ 24mA | 128 nC @ 18 V | +22V, -10V | 3325 pF @ 800 V | - | 362W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
IMT40R011M2HXTMA1SIC-MOS |
1,927 |
|
Datasheet | CoolSiC™ | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 13.4A (Ta), 144A (Tc) | 15V, 18V | 14.4mOhm @ 37.1A, 18V | 5.6V @ 13.3mA | 85 nC @ 18 V | +23V, -7V | 3770 pF @ 200 V | - | 3.8W (Ta), 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
|
SCT3030ARC15650V, 70A, 4-PIN THD, TRENCH-STR |
386 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
IMZC120R017M2HXKSA1IMZC120R017M2HXKSA1 |
240 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 97A (Tc) | 15V, 18V | 17mOhm @ 40A, 18V | 5.1V @ 12.7mA | 89 nC @ 18 V | +23V, -7V | 2910 pF @ 800 V | - | 382W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
|
|
NVH4L027N65S3FSF3 FRFET AUTO 27MOHM TO-247-4L |
799 |
|
Datasheet | SuperFET® III, FRFET® | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 227 nC @ 10 V | ±30V | 7780 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
C3M0045065J1-TRSIC, MOSFET 45M, 650V TO-263-7XL |
730 |
|
Datasheet | C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 61 nC @ 15 V | +19V, -8V | 1621 pF @ 400 V | - | 147W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
G3F25MT12K1200V 25M TO-247-4 G3F SIC MOSFE |
595 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT3030ARHRC15650V, 70A, 4-PIN THD, TRENCH-STR |
448 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | +22V, -4V | 1526 pF @ 500 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
AIMBG120R030M1XTMA1SIC_DISCRETE |
1,708 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 70A (Tc) | 18V, 20V | 38mOhm @ 27A, 20V | 5.1V @ 8.6mA | 57 nC @ 20 V | +23V, -5V | 1738 pF @ 800 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7-12 |
|
|
SCT3040KRC151200V, 55A, 4-PIN THD, TRENCH-ST |
370 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
AIMZA75R020M1HXKSA1AUTOMOTIVE_SICMOS |
190 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 75A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +23V, -5V | 2217 pF @ 500 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
|
|
NSF030120D7A0JNSF030120D7A0/SOT8070/TO263-7L |
800 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NSF030120L3A0QNSF030120L3A0/SOT429-2/TO247-3 |
450 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IMBG65R015M2HXTMA1SILICON CARBIDE MOSFET |
1,000 |
|
Datasheet | CoolSiC™ Gen 2 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 115A (Tc) | 15V, 20V | 18mOhm @ 64.2A, 18V | 5.6V @ 13mA | 79 nC @ 18 V | +23V, -7V | 2792 pF @ 400 V | - | 416W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
|
SCT3040KRHRC151200V, 55A, 4-PIN THD, TRENCH-ST |
395 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 55A (Tc) | 18V | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 262W | 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
NSF030120L4A0QNSF030120L4A0/SOT8071/TO247-4L |
450 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NSF040120L3A0QSIC MOSFET / 40MOHM / 1200V / TO |
412 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AOK033V120X2Q1200V SILICON CARBIDE MOSFET |
209 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 20A, 15V | 2.8V @ 17.5mA | 104 nC @ 15 V | +15V, -5V | 2908 pF @ 800 V | - | 300W (Ta) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
