FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AOM065V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40.3A (Tc)	15V	85mOhm @ 10A, 15V	3.5V @ 10mA	62.3 nC @ 15 V	+15V, -5V	1716 pF @ 800 V	-	187.5W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
S3M0040120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+22V, -8V	2844 pF @ 1000 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
C3M0075120K1 MOSFET N-CH 1200V 32A TO247-4L Wolfspeed, Inc.	345	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	32A (Tc)	15V	97.5mOhm @ 17.9A, 15V	3.8V @ 5mA	55 nC @ 15 V	+19V, -8V	1480 pF @ 1000 V	-	145W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
SICW080N120Y4-BP N-CHANNEL MOSFET,TO-247-4 Micro Commercial Co	338	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	39A	18V	85mOhm @ 20A, 18V	3.6V @ 5mA	41 nC @ 18 V	+22V, -8V	890 pF @ 1000 V	-	223W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
NVH4L032N065M3S SIC MOS TO247-4L 32MOHM 650V M3S onsemi	422	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	50A (Tc)	15V, 18V	44mOhm @ 15A, 18V	4V @ 7.5mA	55 nC @ 18 V	+22V, -8V	1410 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
IMDQ75R027M1HXUMA1 IMDQ75R027M1HXUMA1 Infineon Technologies	708	RFQ	Datasheet	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	64A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+20V, -2V	1668 pF @ 500 V	-	273W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
NVH4L070N120M3S SILICON CARBIDE (SIC) MOSFET-ELI onsemi	222	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	18V	87mOhm @ 15A, 18V	4.4V @ 7mA	57 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
PJMK040N60EC_T0_00201 600V/ 40M / 71A/ EASY TO DRIVER Panjit International Inc.	690	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOK065V65X2 MOSFET N-CH 650V 40.3A TO247 Alpha & Omega Semiconductor Inc.	225	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40.3A (Tc)	15V	85mOhm @ 10A, 15V	3.5V @ 10mA	58.8 nC @ 15 V	+15V, -5V	1762 pF @ 400 V	-	187.5W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
DIW170SIC070 SIC MOSFET, TO-247-3L, N, 70A, 1 Diotec Semiconductor	150	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1700 V	70A (Tc)	20V	22.3mOhm @ 40A, 20V	4V @ 10mA	80 nC @ 18 V	+20V, -5V	6000 pF @ 1200 V	-	416W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
IPQC60R017S7XTMA1 MOSFET Infineon Technologies	750	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.89mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
IPDQ60R017S7XTMA1 MOSFET Infineon Technologies	695	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.89mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
SIHG64N65E-GE3 MOSFET N-CH 650V 64A TO247AC Vishay Siliconix	481	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	64A (Tc)	10V	47mOhm @ 32A, 10V	4V @ 250µA	369 nC @ 10 V	±30V	7497 pF @ 100 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
SCT4026DWATL 750V, 51A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	946	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	51A (Tc)	18V	34mOhm @ 29A, 18V	4.8V @ 15.4mA	94 nC @ 18 V	+21V, -4V	2320 pF @ 500 V	-	-	175°C (TJ)	-	-	Surface Mount	TO-263-7LA
AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies	1,183	RFQ	Datasheet	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	64A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1668 pF @ 500 V	-	273W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7
AOK065V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	240	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40.3A (Tc)	15V	85mOhm @ 10A, 15V	3.5V @ 10mA	62.3 nC @ 15 V	+15V, -5V	1716 pF @ 800 V	-	187.5W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247
NVH4L040N65S3F MOSFET N-CH 650V 65A TO247-4 onsemi	448	RFQ	Datasheet	SuperFET® III, FRFET®	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	65A (Tc)	-	40mOhm @ 32.5A, 10V	5V @ 2.1mA	160 nC @ 10 V	±30V	5665 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
G3F40MT12J-TR 1200V 40M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	59A (Tc)	18V	53mOhm @ 20A, 18V	4.3V @ 16mA	86 nC @ 18 V	+22V, -10V	2023 pF @ 800 V	-	270W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
E4M0045075K1 MOSFETS AUTOMOTIVE 139W 3.8V NC Wolfspeed, Inc.	254	RFQ	Datasheet	E	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	42A (Tc)	15V	60mOhm @ 17.6A, 15V	3.8V @ 4.84mA	65 nC @ 15 V	+19V, -8V	1606 pF @ 500 V	-	139W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IMW65R026M2HXKSA1 IMW65R026M2HXKSA1 Infineon Technologies	390	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	64A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	5.6V @ 7mA	42 nC @ 18 V	+23V, -7V	1499 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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