FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
S3M0040120J MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	76A (Tc)	18V	52mOhm @ 40A, 18V	4V @ 16mA	143 nC @ 18 V	+20V, -8V	2844 pF @ 1000 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
TSG65N110CE RVG 650V, 18A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation	3,000	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMDQ75R027M1HXUMA1 AIMDQ75R027M1HXUMA1 Infineon Technologies	671	RFQ	Datasheet	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	64A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1668 pF @ 500 V	-	273W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
G3F40MT12K 1200V 40M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	552	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	55A (Tc)	18V	53mOhm @ 20A, 18V	4.3V @ 16mA	86 nC @ 18 V	+22V, -10V	2023 pF @ 800 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
AOK033V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	208	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	15V	43mOhm @ 20A, 15V	2.8V @ 17.5mA	104 nC @ 15 V	+15V, -5V	2908 pF @ 800 V	-	300W (Ta)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
NSF060120L4A0Q NSF060120L4A0/SOT8071/TO247-4L Nexperia USA Inc.	450	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPDQ60R017S7AXTMA1 MOSFET Infineon Technologies	750	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.89mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
IMZC120R026M2HXKSA1 IMZC120R026M2HXKSA1 Infineon Technologies	215	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	69A (Tc)	15V, 18V	25mOhm @ 27A, 18V	5.1V @ 8.6mA	60 nC @ 18 V	+23V, -7V	1990 pF @ 800 V	-	289W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
IMZA75R027M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	239	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	60A (Tj)	15V, 20V	25mOhm @ 24.5A, 20V	5.6V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1668 pF @ 500 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4
AOK065V120X2 SILICON CARBIDE MOSFET, ENHANCEM Alpha & Omega Semiconductor Inc.	118	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40.3A (Tc)	15V	85mOhm @ 20A, 15V	3.5V @ 250µA	62.3 nC @ 15 V	+18V, -8V	1716 pF @ 800 V	-	187.5W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
SCT060HU75G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	582	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	30A (Tc)	15V, 18V	78mOhm @ 15A, 18V	4.2V @ 1mA	29 nC @ 18 V	4.2V @ 1mA	680 pF @ 400 V	-	185W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	HU3PAK
IPZA60R016CM8XKSA1 IPZA60R016CM8XKSA1 Infineon Technologies	391	RFQ	Datasheet	CoolMOS™	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	123A (Tc)	10V	16mOhm @ 62.5A, 10V	4.7V @ 1.48mA	171 nC @ 10 V	±20V	7545 pF @ 400 V	-	521W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4-U02
NVBG023N065M3S SIC MOS D2PAK-7L 23MOHM 650V M3S onsemi	1,600	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	70A (Tc)	15V, 18V	33mOhm @ 20A, 18V	4V @ 10mA	69 nC @ 18 V	+22V, -8V	1951 pF @ 400 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
G3F33MT06K 650V 27M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	74A (Tc)	15V, 18V	38mOhm @ 26A, 18V	4.3V @ 12mA	81 nC @ 18 V	+22V, -10V	2394 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
NVHL060N065SC1 SIC MOS TO247-3L 650V onsemi	450	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	47A (Tc)	15V, 18V	70mOhm @ 20A, 18V	4.3V @ 6.5mA	74 nC @ 18 V	+22V, -8V	1473 pF @ 325 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
GS66502B-MR GS66502B-MR Infineon Technologies Canada Inc.	208	RFQ	Datasheet	-	3-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.5A (Tc)	6V	260mOhm @ 2.25A, 6V	2.6V @ 1.75mA	1.6 nC @ 6 V	+7V, -10V	60 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	-
TW048Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 48 Toshiba Semiconductor and Storage	243	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	18V	69mOhm @ 20A, 18V	5V @ 1.6mA	41 nC @ 18 V	+25V, -10V	1362 pF @ 400 V	-	132W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
AIMBG120R060M1XTMA1 SIC_DISCRETE Infineon Technologies	959	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	38A (Tc)	18V, 20V	75mOhm @ 13A, 20V	5.1V @ 4.3mA	32 nC @ 20 V	+23V, -5V	880 pF @ 800 V	-	202W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-12
NVHL023N065M3S SIC MOS TO247-3L 23MOHM 650V M3S onsemi	440	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	70A (Tc)	15V, 18V	33mOhm @ 20A, 18V	4V @ 10mA	69 nC @ 18 V	+22V, -8V	1952 pF @ 400 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
SCTH35N65G2V-7AG SICFET N-CH 650V 45A H2PAK-7 STMicroelectronics	1,000	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	5V @ 1mA	73 nC @ 20 V	+22V, -10V	1370 pF @ 400 V	-	208W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.