FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AOM015V65X2 650V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	96A (Tc)	15V	22mOhm @ 24A, 15V	3.5V @ 24mA	152 nC @ 15 V	+15V, -5V	4880 pF @ 400 V	-	312W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
AOK015V65X2 650V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	96A (Tc)	15V	22mOhm @ 24A, 15V	3.5V @ 24mA	152 nC @ 15 V	+15V, -5V	4880 pF @ 400 V	-	312W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
C3M0025075K1 SICFET N-CH 750V 80A TO247 Wolfspeed, Inc.	184	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	80A (Ta)	15V	34mOhm @ 33.5A, 15V	3.8V @ 9.22mA	119 nC @ 15 V	-8V, +19V	3055 pF @ 500 V	-	262W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
NVHL025N065SC1 SIC MOS TO247-3L 650V onsemi	450	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	99A (Tc)	15V, 18V	28.5mOhm @ 45A, 18V	4.3V @ 15.5mA	164 nC @ 18 V	+22V, -8V	3480 pF @ 325 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
NSF040120L4A0Q NSF040120L4A0/SOT8071/TO247-4L Nexperia USA Inc.	432	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tj)	15V, 18V	60mOhm @ 40A, 15V	2.9V @ 4mA	95 nC @ 15 V	+22V, -10V	2600 pF @ 800 V	-	306W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
NVH4L025N065SC1 SIC MOS TO247-4L 650V onsemi	882	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	99A (Tc)	15V, 18V	28.5mOhm @ 45A, 18V	4.3V @ 15.5mA	164 nC @ 18 V	+22V, -8V	3480 pF @ 325 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IPQC60R010S7XTMA1 MOSFET Infineon Technologies	750	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.08mA	318 nC @ 12 V	±20V	-	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
NTHL019N60S5F SUPERFET5 FRFET, 19MOHM, TO-247- onsemi	442	RFQ	Datasheet	SuperFET® V, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	75A (Tc)	10V	19mOhm @ 37.5A,10V	4.8V @ 15.7mA	252 nC @ 10 V	±30V	13400 pF @ 400 V	-	568W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
E3M0040120J2-TR 40m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	736	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	15V	53mOhm @ 31.9A, 15V	3.8V @ 8.77mA	91 nC @ 15 V	+19V, -8V	2726 pF @ 1000 V	-	294W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
AOM020V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	230	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	15V	28mOhm @ 27A, 15V	2.8V @ 27mA	166 nC @ 15 V	+18V, -8V	5180 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
S2M0016120D-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	140A (Tc)	18V, 20V	23mOhm @ 75A, 20V	3.6V @ 23mA	285 nC @ 20 V	+20V, -5V	4540 pF @ 1000 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
NVH4L030N120M3S SILICON CARBIDE (SIC) MOSFET-ELI onsemi	393	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	73A (Tc)	18V	39mOhm @ 30A, 18V	4.4V @ 15mA	107 nC @ 18 V	+22V, -10V	2430 pF @ 800 V	-	313W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
S2M0016120K-1 MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	147	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	140A (Tc)	18V, 20V	23mOhm @ 75A, 20V	3.6V @ 23mA	285 nC @ 20 V	+20V, -5V	4540 pF @ 1000 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
TSG65N068CE RVG 650V, 30A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation	2,962	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
C3M0065100J-TR SICFET N-CH 1000V 35A TO263-7 Wolfspeed, Inc.	788	RFQ	Datasheet	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1000 V	35A (Tc)	15V	78mOhm @ 20A, 15V	3.5V @ 5mA	35 nC @ 15 V	+15V, -4V	660 pF @ 600 V	-	113.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7
G3F20MT12J-TR 1200V 20M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	108A (Tc)	18V	26.5mOhm @ 40A, 18V	4.3V @ 30mA	176 nC @ 18 V	+22V, -10V	4317 pF @ 800 V	-	448W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
IMZA75R016M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	210	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	89A (Tj)	15V, 20V	15mOhm @ 41.5A, 20V	5.6V @ 14.9mA	81 nC @ 18 V	+23V, -5V	2869 pF @ 500 V	-	319W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4
AIMZA75R016M1HXKSA1 SICFET N-CH 750V 89A PG-TO247-4 Infineon Technologies	213	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	89A (Tc)	15V, 20V	22mOhm @ 41.5A, 18V	5.6V @ 14.9mA	81 nC @ 18 V	+23V, -5V	2869 pF @ 500 V	-	319W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4
DIF120SIC053-AQ MOSFET TO-247-4L N 65A 1200V Diotec Semiconductor	433	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	18V	53mOhm @ 33A, 18V	4V @ 9.5mA	121 nC @ 15 V	-	2070 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
DIW120SIC059-AQ MOSFET TO-247-3L N 65A 1200V Diotec Semiconductor	430	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	65A (Tc)	18V	53mOhm @ 33A, 18V	4V @ 9.5mA	121 nC @ 15 V	-	2070 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

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