FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G3R40MT12J-TR1200V 40M TO-263-7 G3R SIC MOSFE |
630 |
|
Datasheet | G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V, 18V | 45mOhm @ 35A, 18V | 2.7V @ 18mA | 88 nC @ 15 V | +22V, -10V | 2897 pF @ 800 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
|
IMDQ75R020M1HXUMA1IMDQ75R020M1HXUMA1 |
750 |
|
Datasheet | CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +20V, -2V | 2217 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
NVBG060N090SC1SIC MOS N-CH 900V 5.8A D2PAK-7 |
2,081 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 5.8A (Ta), 44A (Tc) | 15V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 88 nC @ 15 V | +19V, -10V | 1800 pF @ 450 V | - | 3.6W (Ta), 211W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK-7 |
|
|
NSF040120D7A0JNSF040120D7A0/SOT8070/TO263-7L |
800 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AIMBG75R020M1HXTMA1AIMBG75R020M1HXTMA1 |
424 |
|
Datasheet | CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 34.1A, 20V | 5.6V @ 12.2mA | 70 nC @ 18 V | +23V, -5V | 2326 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
|
|
AOM033V120X2Q1200V SILICON CARBIDE MOSFET |
150 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 20A, 15V | 2.8V @ 17.5mA | 104 nC @ 15 V | +18V, -8V | 2908 pF @ 800 V | - | 300W (Tj) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
|
|
NVHL045N065SC1SIC MOS TO247-3L 650V |
442 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 66A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1870 pF @ 325 V | - | 291W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
|
|
E4M0045075J2-TRMOSFETS 1606 PF 172W 3.8V 62 NC |
426 |
|
Datasheet | E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 46A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.8V @ 4.84mA | 62 nC @ 15 V | +19V, -8V | 1606 pF @ 500 V | - | 172W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
IXFK420N10TMOSFET N-CH 100V 420A TO264AA |
224 |
|
Datasheet | HiPerFET™, Trench | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 420A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 5V @ 8mA | 670 nC @ 10 V | ±20V | 47000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
|
G3F34MT12J-TR1200V 34M TO-263-7 G3F SIC MOSFE |
800 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 68A (Tc) | 18V | 45mOhm @ 26A, 18V | 4.3V @ 18mA | 104 nC @ 18 V | +22V, -10V | 2418 pF @ 800 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
G3F25MT06J-TR650V 20M TO-263-7 G3F SIC MOSFET |
800 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 108A (Tc) | 15V, 18V | 27.5mOhm @ 35A, 18V | 4.3V @ 15mA | 108 nC @ 18 V | +22V, -10V | 2939 pF @ 400 V | - | 343W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
|
SICW028N120A4-BPMOSFET N-CH 1200 V 80A TO247-4 |
1,800 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 80A (Tc) | 16V, 20V | 30mOhm @ 40A, 20V | 3V @ 15mA | 168 nC @ 18 V | +22V, -5V | 3570 pF @ 1000 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
G3F34MT12K1200V 34M TO-247-4 G3F SIC MOSFE |
600 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 18V | 45mOhm @ 26A, 18V | 4.3V @ 18mA | 104 nC @ 18 V | +22V, -10V | 2418 pF @ 800 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
AIMDQ75R020M1HXUMA1AIMDQ75R020M1HXUMA1 |
670 |
|
Datasheet | CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +23V, -5V | 2217 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
|
|
AOM033V120X21200V SILICON CARBIDE MOSFET |
234 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 20A, 15V | 2.8V @ 17.5mA | 104 nC @ 15 V | +15V, -5V | 2908 pF @ 800 V | - | 300W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
S3M0025120KMOSFET SILICON CARBIDE SIC 1200V |
240 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 77A (Tc) | 18V | 32mOhm @ 48A, 18V | 4V @ 20mA | 175 nC @ 18 V | +22V, -8V | 3519 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
GAN039-650NBBHP650 V, 33 MOHM GALLIUM NITRIDE ( |
935 |
|
Datasheet | - | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 39mOhm @ 32A, 10V | 4.8V @ 1mA | 30 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
|
|
NVH4L023N065M3SSIC MOS TO247-4L 23MOHM 650V M3S |
450 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 67A (Tc) | 15V, 18V | 33mOhm @ 20A, 18V | 4V @ 10mA | 69 nC @ 18 V | +22V, -8V | 1952 pF @ 400 V | - | 245W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
IMZA75R020M1HXKSA1SILICON CARBIDE MOSFET |
237 |
|
Datasheet | CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 75A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +23V, -5V | 2217 pF @ 500 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
|
G3F25MT06K650V 20M TO-247-4 G3F SIC MOSFET |
595 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 100A (Tc) | 15V, 18V | 27.5mOhm @ 35A, 18V | 4.3V @ 15mA | 108 nC @ 18 V | +22V, -10V | 2939 pF @ 400 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.
