FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AOK015V75X2Q 750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	226	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	96A (Tc)	15V	22mOhm @ 24A, 15V	3.5V @ 24mA	152 nC @ 15 V	+15V, -5V	4880 pF @ 400 V	-	312W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247
AOM015V75X2Q 750V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	205	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	96A (Tc)	15V	22mOhm @ 24A, 15V	3.5V @ 24mA	152 nC @ 15 V	+15V, -5V	4880 pF @ 400 V	-	312W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IMW65R010M2HXKSA1 IMW65R010M2HXKSA1 Infineon Technologies	396	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	130A (Tc)	15V, 20V	9.1mOhm @ 92.1A, 20V	5.6V @ 18.7mA	112 nC @ 18 V	+23V, -7V	4001 pF @ 400 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
G3F20MT12K 1200V 20M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	595	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-4
NVHL070N120M3S SIC MOS TO247-3L 70MOHM 1200V M3 onsemi	410	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	18V	87mOhm @ 15A, 18V	4.4V @ 7mA	57 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
S3M0016120B MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	106A (Tc)	18V	23mOhm @ 75A, 18V	4V @ 30mA	287 nC @ 18 V	+22V, -8V	5251 pF @ 1000 V	-	576W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
IMZA65R010M2HXKSA1 IMZA65R010M2HXKSA1 Infineon Technologies	400	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	144A (Tc)	15V, 20V	9.1mOhm @ 92.1A, 20V	5.6V @ 18.7mA	112 nC @ 18 V	+23V, -7V	4001 pF @ 400 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8
E4M0025075J2-TR MOSFETS 3055 PF 281W 3.8V 114 NC Wolfspeed, Inc.	524	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	84A (Tc)	15V	34mOhm @ 33.5A, 15V	3.8V @ 9.22mA	114 nC @ 15 V	+19V, -8V	3055 pF @ 500 V	-	281W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
E4M0025075K1 MOSFETS AUTOMOTIVE 262W 3.8V NC Wolfspeed, Inc.	286	RFQ	Datasheet	E	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	80A (Tc)	15V	34mOhm @ 33.5A, 15V	3.8V @ 9.22mA	119 nC @ 15 V	+19V, -8V	3055 pF @ 500 V	-	262W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
AIMBG120R020M1XTMA1 SIC_DISCRETE Infineon Technologies	864	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	104A (Tc)	18V, 20V	25mOhm @ 43A, 20V	5.1V @ 15mA	82 nC @ 20 V	+23V, -5V	2667 pF @ 800 V	-	468W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-12
IMZC120R012M2HXKSA1 IMZC120R012M2HXKSA1 Infineon Technologies	215	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	129A (Tc)	15V, 18V	12mOhm @ 57A, 18V	5.1V @ 17.8mA	124 nC @ 18 V	+23V, -7V	4050 pF @ 800 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
APT1201R2BFLLG MOSFET N-CH 1200V 12A TO247 Microchip Technology	274	RFQ	Datasheet	POWER MOS 7®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	12A (Tc)	-	1.25Ohm @ 6A, 10V	5V @ 1mA	100 nC @ 10 V	-	2540 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
IXFX32N80Q3 MOSFET N-CH 800V 32A PLUS247-3 Littelfuse Inc.	600	RFQ	Datasheet	HiPerFET™, Q3 Class	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	32A (Tc)	10V	270mOhm @ 16A, 10V	6.5V @ 4mA	140 nC @ 10 V	±30V	6940 pF @ 25 V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
G3F18MT12J-TR 1200V 18M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	122A (Tc)	18V	25mOhm @ 45A, 18V	4.3V @ 35mA	212 nC @ 18 V	+22V, -10V	4962 pF @ 800 V	-	526W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
C3M0021120K1 MOSFET N-CH 1200V 104A TO247-4L Wolfspeed, Inc.	869	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	104A (Tc)	15V	29mOhm @ 62.1A, 15V	3.8V @ 17.1mA	177 nC @ 15 V	+19V, -8V	5100 pF @ 1000 V	-	405W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
AOM020V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	217	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	89A (Tc)	15V	28mOhm @ 27A, 15V	2.8V @ 27mA	166 nC @ 15 V	+15V, -5V	5180 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
TW030Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 3 Toshiba Semiconductor and Storage	105	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	41mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
G3F18MT12K 1200V 18M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	595	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
E3M0032120J2-TR 32m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	729	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	74A (Tc)	15V	43mOhm @ 38.9A, 15V	3.8V @ 10.7mA	108 nC @ 15 V	+19V, -8V	3460 pF @ 1000 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
SCTH100N65G2-7AG SICFET N-CH 650V 95A H2PAK-7 STMicroelectronics	876	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	95A (Tc)	18V	26mOhm @ 50A, 18V	5V @ 5mA	162 nC @ 18 V	+22V, -10V	3315 pF @ 520 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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