FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
C3M0025065J1-TR SIC, MOSFET 25 M, 650V TO-263-7X Wolfspeed, Inc.	780	RFQ	Datasheet	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	80A (Tc)	15V	34mOhm @ 33.5A, 15V	3.6V @ 9.22mA	109 nC @ 15 V	+19V, -8V	2980 pF @ 400 V	-	271W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7
NVHL015N065SC1 SIC MOS TO247-3L 650V onsemi	447	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	163A (Tc)	15V, 18V	18mOhm @ 75A, 12V	4.3V @ 25mA	283 nC @ 18 V	+22V, -8V	4790 pF @ 325 V	-	643W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
E3M0021120J2-TR 21m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	488	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	114A (Tc)	15V	29mOhm @ 62.12A, 15V	3.8V @ 17.1mA	169 nC @ 15 V	+19V, -8V	5100 pF @ 1000 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
AIMZA75R008M1HXKSA1 AUTOMOTIVE_SICMOS Infineon Technologies	240	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	163A (Tc)	15V, 20V	7.2mOhm @ 90.3A, 20V	5.6V @ 32.4mA	178 nC @ 18 V	+23V, -5V	6137 pF @ 500 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-U02
IMZA75R008M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	240	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	750 V	163A (Tc)	15V, 20V	7.2mOhm @ 90.3A, 20V	5.6V @ 32.4mA	178 nC @ 500 V	+23V, -5V	6137 pF @ 500 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-U02
NCV81342CBATXG MOSFET onsemi	1,000	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD030N03LF2SATMA1 MOSFET N-CH 30V 160A DPAK Infineon Technologies	2,000	RFQ	Datasheet	StrongIRFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	24A (Ta), 99A (Tc)	4.5V, 10V	3.05mOhm @ 60A, 10V	2.35V @ 40µA	50 nC @ 10 V	±20V	2200 pF @ 15 V	-	3W (Ta), 83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3-34
APT60M75L2FLLG MOSFET N-CH 600V 73A 264 MAX Microchip Technology	82	RFQ	Datasheet	POWER MOS 7®	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	73A (Tc)	10V	75mOhm @ 36.5A, 10V	5V @ 5mA	195 nC @ 10 V	±30V	8930 pF @ 25 V	-	893W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	264 MAX™ [L2]
C3M0016120K1 MOSFET N-CH 1200V 125A TO247-4L Wolfspeed, Inc.	325	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	125A (Tc)	15V	22mOhm @ 80.28A, 15V	3.8V @ 22.08mA	223 nC @ 15 V	+19V, -8V	6922 pF @ 1000 V	-	483W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
APL502B2G MOSFET N-CH 500V 58A T-MAX Microchip Technology	106	RFQ	Datasheet	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	58A (Tc)	15V	90mOhm @ 29A, 12V	4V @ 2.5mA	-	±30V	9000 pF @ 25 V	-	730W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	T-MAX™ [B2]
DIW120SIC022-AQ SIC MOSFET, TO-247-3L, N, 120A, Diotec Semiconductor	150	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	120A (Tc)	18V	22.3mOhm @ 75A, 18V	4V @ 23.5mA	269 nC @ 18 V	+18V, -4V	4817 pF @ 1000 V	-	340W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247
DIF120SIC022-AQ SIC MOSFET, TO-247-4L, N, 120A, Diotec Semiconductor	150	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	120A (Tc)	18V	22.3mOhm @ 75A, 18V	4V @ 23.5mA	269 nC @ 18 V	+18V, -4V	4817 pF @ 1000 V	-	340W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
TW015Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 1 Toshiba Semiconductor and Storage	68	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	18V	21mOhm @ 50A, 18V	5V @ 11.7mA	158 nC @ 18 V	+25V, -10V	6000 pF @ 800 V	-	431W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
IXFN55N120SK SIC AND MULTICHIP DISCRETE IXYS	182	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	54A (Tc)	15V	42mOhm @ 40A, 15V	3.6V @ 12mA	107 nC @ 15 V	+15V, -4V	3360 pF @ 1000 V	-	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
DIW120SIC023-AQ MOSFET TO-247-3L N 130A 1200V Diotec Semiconductor	705	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	125A (Tc)	18V	23mOhm @ 75A, 18V	2.9V @ 250µA	45 nC @ 18 V	-	6150 pF @ 1000 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247
DF17MR12W1M1HFB68BPSA1 LOW POWER EASY Infineon Technologies	33	RFQ	Datasheet	EasyPACK™	Module	Tray	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	45A (Tj)	15V, 18V	16.2mOhm @ 50A, 18V	5.15V @ 20mA	149 nC @ 18 V	+20V, -7V	4400 pF @ 800 V	-	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
CDA04N30X1C GANFET 40V 30A .004 OHM 4DAPT EPC Space, LLC	88	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CDA10N30X1C GANFET 100V 30A .009 OHM 4DAPT EPC Space, LLC	100	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CDA10N05X2C GANFET 100V 5A .030 OHM 4DAPT EPC Space, LLC	100	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CDA20N18X3C GANFET 200V 18A .025 OHM 4DAPT EPC Space, LLC	64	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.