FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTH4L030N120M3SSILICON CARBIDE (SIC) MOSFET EL |
422 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
NVH040N65S3FSF3 FRFET AUTO 40MOHM TO-247 |
412 |
|
Datasheet | SuperFET® III | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 153 nC @ 10 V | ±30V | 5875 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
SICW025N065H-BPSIC MOSFET,TO-247AB |
360 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 107A (Tc) | 18V | 30mOhm @ 50A, 18V | 4.5V @ 50mA | 275 nC @ 18 V | +22V, -10V | 5740 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
|
STH12N120K5-2AGAUTOMOTIVE-GRADE N-CHANNEL 1200 |
998 |
|
Datasheet | MDmesh™ K5 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | H2PAK-2 |
|
S2M0040120D-1MOSFET SILICON CARBIDE SIC 1200V |
299 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
|
NSF080120L3A0QSIC MOSFET / 80MOHM / 1200V / TO |
420 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
G3F45MT06D650V 40M TO-247-3 G3F SIC MOSFET |
600 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
|
GS-065-030-6-LL-MRGAN POWER TRANSISTOR |
195 |
|
Datasheet | - | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 40A (Tc) | 6V | 58mOhm @ 5.5A, 6V | 2.6V @ 7.5mA | 6.7 nC @ 6 V | +7V, -10V | 235 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL |
|
C3M0045075K1SICFET N-CH 750V 42A TO247 |
167 |
|
Datasheet | - | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 42A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.8V @ 4.84mA | 65 nC @ 15 V | -8V, +19V | 1606 pF @ 500 V | - | 139W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
IPWS65R022CFD7AXKSA1AUTOMOTIVE_COOLMOS PG-TO247-3 |
238 |
|
Datasheet | CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 22mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±30V | 11659 pF @ 400 V | - | 446W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-31 |
|
S3M0040120DMOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
|
S2M0040120K-1MOSFET SILICON CARBIDE SIC 1200V |
300 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tj) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 92.1 nC @ 20 V | +20V, -5V | 1904 pF @ 1000 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
IPDQ60R025CFD7XTMA1HIGH POWER_NEW |
725 |
|
Datasheet | CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90A (Tc) | 10V | 25mOhm @ 32.6A, 10V | 4.5V @ 1.63mA | 141 nC @ 10 V | ±20V | 5626 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
G3F33MT06J-TR650V 27M TO-263-7 G3F SIC MOSFET |
800 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 80A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 261W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
|
G3F45MT06K650V 40M TO-247-4 G3F SIC MOSFET |
600 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 52A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
AIMZHN120R080M1TXKSA1SIC_DISCRETE |
233 |
|
Datasheet | - | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V, 20V | 100mOhm @ 10A, 20V | 5.1V @ 3.3mA | 24 nC @ 20 V | +23V, -5V | 671 pF @ 800 V | - | 169W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
SCT055HU65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
523 |
|
Datasheet | - | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 15V, 18V | 72mOhm @ 15A, 18V | 4.2V @ 1mA | 29 nC @ 18 V | +22V, -10V | 721 pF @ 400 V | - | 185W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | HU3PAK |
|
STY60NK30ZMOSFET N-CH 300V 60A MAX247 |
490 |
|
Datasheet | SuperMESH™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 100µA | 220 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | MAX247™ |
|
NSF060120D7A0JNSF060120D7A0/SOT8070/TO263-7L |
800 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NSF060120L3A0QNSF060120L3A0/SOT429-2/TO247-3 |
450 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
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