FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IMZC120R040M2HXKSA1 IMZC120R040M2HXKSA1 Infineon Technologies	240	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	48A (Tc)	15V, 18V	40mOhm @ 18A, 18V	5.1V @ 5.5mA	39 nC @ 18 V	+23V, -7V	1310 pF @ 800 V	-	218W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
G3F45MT06J-TR 650V 40M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	56A (Tc)	15V, 18V	54mOhm @ 20A, 18V	4.3V @ 8mA	55 nC @ 18 V	+22V, -10V	1640 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
G3F65MT12J-TR 1200V 65M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	37A (Tc)	18V	86mOhm @ 15A, 18V	4.3V @ 10mA	55 nC @ 18 V	+22V, -10V	1298 pF @ 800 V	-	171W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
R6061YNZ4C13 NCH 600V 61A, TO-247, POWER MOSF Rohm Semiconductor	588	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61A (Tc)	10V, 12V	60mOhm @ 13A, 12V	6V @ 3.5mA	76 nC @ 10 V	±30V	3700 pF @ 100 V	-	568W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
IPT60T022S7XTMA1 HIGH POWER_NEW Infineon Technologies	218	RFQ	Datasheet	CoolMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	23A (Tj)	12V	22mOhm @ 23A, 12V	4.5V @ 1.43mA	150 nC @ 12 V	±20V	5640 pF @ 300 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2
G3F65MT12K 1200V 65M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	35A (Tc)	18V	86mOhm @ 15A, 18V	4.3V @ 10mA	55 nC @ 18 V	+22V, -10V	1298 pF @ 800 V	-	153W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
C3M0060075K1 SICFET N-CH 750V 35A TO247 Wolfspeed, Inc.	389	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	35A (Tc)	15V	78mOhm @ 13.4A, 15V	3.8V @ 3.67mA	52 nC @ 15 V	-8V, +19V	1203 pF @ 500 V	-	126W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
C3M0160120J-TR SIC, MOSFET, 160M, 1200V, TO-263 Wolfspeed, Inc.	300	RFQ	Datasheet	C3M™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	24 nC @ 15 V	+15V, -4V	632 pF @ 1000 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7
C3M0160120K1 MOSFET N-CH 1200V 17.9A TO247-4L Wolfspeed, Inc.	229	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17.9A (Tc)	15V	208mOhm @ 8.5A, 15V	3.8V @ 2.33mA	32 nC @ 15 V	+19V, -8V	730 pF @ 1000 V	-	103W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
IPQC60T022S7XTMA1 HIGH POWER_NEW Infineon Technologies	750	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	90A (Tc)	12V	22mOhm @ 23A, 12V	4.5V @ 1.43mA	150 nC @ 12 V	±20V	5640 pF @ 300 V	-	416W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
NVHL075N065SC1 SILICON CARBIDE (SIC) MOSFET, NC onsemi	446	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	38A (Tc)	15V, 18V	85mOhm @ 15A, 18V	4.3V @ 5mA	61 nC @ 18 V	+22V, -8V	1196 pF @ 325 V	-	148W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
STL57N65M5 MOSFET N-CH 650V 4.3A 8POWERFLAT STMicroelectronics	5,445	RFQ	Datasheet	MDmesh™ V	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	4.3A (Ta), 22.5A (Tc)	10V	69mOhm @ 20A, 10V	5V @ 250µA	110 nC @ 10 V	±25V	4200 pF @ 100 V	-	2.8W (Ta), 189W (Tc)	150°C (TJ)	-	-	Surface Mount	PowerFlat™ (8x8) HV
NSF080120D7A0J NSF080120D7A0/SOT8070/TO263-7L Nexperia USA Inc.	797	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SICW040N120H-BP SIC MOSFET,TO-247AB Micro Commercial Co	360	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	62A (Tc)	20V	52mOhm @ 30A, 20V	4.5V @ 40mA	229 nC @ 20 V	+25V, -10V	3619 pF @ 800 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AB
E4M0060075J2-TR MOSFETS 1205 PF 131W 3.8V 50 NC Wolfspeed, Inc.	494	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	36A (Tc)	15V	78mOhm @ 13.4A, 15V	3.8V @ 3.67mA	50 nC @ 15 V	+19V, -8V	1205 pF @ 500 V	-	131W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7
NVH4L050N65S3F SF3 FRFET AUTO 50MOHM TO-247-4L onsemi	405	RFQ	Datasheet	SuperFET® III, FRFET®	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	58A (Tc)	10V	50mOhm @ 29A, 10V	5V @ 1.7mA	123.8 nC @ 10 V	±30V	4855 pF @ 400 V	-	403W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4L
SICW040N120H4-BP SIC MOSFET,TO-247-4 Micro Commercial Co	360	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	62A (Tc)	20V	52mOhm @ 30A, 20V	4.5V @ 40mA	229 nC @ 20 V	+20V, -5V	3619 pF @ 800 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
E3M0160120K SICFET N-CH 1.2KV 17.9A TO-247-4 Wolfspeed, Inc.	287	RFQ	Datasheet	E	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17.9A (Tc)	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	32 nC @ 15 V	-8V, +19V	730 pF @ 1000 V	-	103W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
APT5017BVRG MOSFET N-CH 500V 30A TO247 Microchip Technology	243	RFQ	Datasheet	POWER MOS V®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	30A (Tc)	-	170mOhm @ 500mA, 10V	4V @ 1mA	300 nC @ 10 V	-	5280 pF @ 25 V	-	-	-	-	-	Through Hole	TO-247 [B]
NVH4L075N065SC1 SIC MOS TO247-4L 650V onsemi	240	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	38A (Tc)	15V, 18V	85mOhm @ 15A, 18V	4.3V @ 5mA	61 nC @ 18 V	+22V, -8V	1196 pF @ 325 V	-	148W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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