FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SCTWA35N65G2V-4 DISCRETE STMicroelectronics	600	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	5V @ 1mA	73 nC @ 20 V	+18V, -5V	1370 pF @ 400 V	-	240W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	TO-247-4
NTHL030N120M3S SILICON CARBIDE (SIC) MOSFET EL onsemi	351	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	73A (Tc)	18V	39mOhm @ 30A, 18V	4.4V @ 15mA	107 nC @ 18 V	+22V, -10V	2430 pF @ 800 V	-	313W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3
IMW65R033M2HXKSA1 IMW65R033M2HXKSA1 Infineon Technologies	369	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	53A (Tc)	15V, 20V	30mOhm @ 27.9A, 20V	5.6V @ 5.7mA	34 nC @ 18 V	+23V, -7V	1214 pF @ 400 V	-	194W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
TSM60NE048PW C0G MOSFET Taiwan Semiconductor Corporation	300	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61A (Tc)	10V, 12V	44mOhm @ 20A, 12V	6V @ 4.6mA	114 nC @ 10 V	±30V	5023 pF @ 300 V	-	431W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247
AOM065V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	238	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40.3A (Tc)	15V	85mOhm @ 10A, 15V	3.5V @ 10mA	62.3 nC @ 15 V	+18V, -8V	1716 pF @ 800 V	-	187.5W (Tj)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L
IMT40R015M2HXTMA1 SIC-MOS Infineon Technologies	1,942	RFQ	Datasheet	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	400 V	11.7A (Ta), 111A (Tc)	15V, 18V	19.1mOhm @ 27.1A, 18V	5.6V @ 9.7mA	62 nC @ 18 V	+23V, -7V	2730 pF @ 200 V	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2
GAN039-650NTBJ GAN CASCODE FETS Nexperia USA Inc.	948	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	58.5A (Ta)	10V	39mOhm @ 32A, 10V	4.6V @ 1mA	26 nC @ 10 V	±20V	1980 pF @ 400 V	-	250W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	CCPAK1212i
R6086YNZ4C13 NCH 600V 86A, TO-247, POWER MOSF Rohm Semiconductor	521	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	86A (Tc)	10V, 12V	44mOhm @ 17A, 12V	6V @ 4.6mA	110 nC @ 10 V	±30V	5100 pF @ 100 V	-	781W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247G
IPDQ60R016CM8XTMA1 IPDQ60R016CM8XTMA1 Infineon Technologies	720	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	135A (Tc)	10V	16mOhm @ 62.5A, 10V	4.7V @ 1.48mA	171 nC @ 10 V	±20V	7545 pF @ 400 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
SCT3080KRHRC15 1200V, 31A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	440	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	60 nC @ 18 V	+22V, -4V	785 pF @ 800 V	-	165W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IPDQ60R022S7AXTMA1 MOSFET Infineon Technologies	750	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	24A (Tc)	12V	22mOhm @ 23A, 12V	4.5V @ 1.44mA	150 nC @ 12 V	±20V	5640 pF @ 300 V	-	416W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22-1
NVHL060N090SC1 SICFET N-CH 900V 46A TO247-3 onsemi	383	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V	84mOhm @ 20A, 15V	4.3V @ 5mA	87 nC @ 15 V	+19V, -10V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
SCT3060ARHRC15 650V, 39A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	446	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	39A (Tc)	18V	78mOhm @ 13A, 18V	5.6V @ 6.67mA	58 nC @ 18 V	+22V, -4V	852 pF @ 500 V	-	165W	175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
NSF080120L4A0Q NSF080120L4A0/SOT8071/TO247-4L Nexperia USA Inc.	446	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A (Tc)	15V, 18V	120mOhm @ 20A, 15V	2.9V @ 2mA	52 nC @ 15 V	+22V, -10V	1335 pF @ 800 V	-	183W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
AIMZA75R040M1HXKSA1 IGBT Infineon Technologies	229	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	44A (Tj)	15V, 20V	37mOhm @ 16.6A, 20V	5.6V @ 6mA	34 nC @ 18 V	+23V, -5V	1135 pF @ 500 V	-	185W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4
IMZA65R033M2HXKSA1 IMZA65R033M2HXKSA1 Infineon Technologies	390	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	53A (Tc)	15V, 20V	30mOhm @ 27.9A, 20V	5.6V @ 5.7mA	34 nC @ 18 V	+23V, -7V	1214 pF @ 400 V	-	194W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8
IMBG40R015M2HXTMA1 SIC-MOS Infineon Technologies	939	RFQ	Datasheet	CoolSiC™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	400 V	11.7A (Ta), 111A (Tc)	15V, 18V	19.1mOhm @ 27.1A, 18V	5.6V @ 9.7mA	62 nC @ 18 V	+23V, -7V	2730 pF @ 200 V	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-11
SCT3060ARC15 650V, 39A, 4-PIN THD, TRENCH-STR Rohm Semiconductor	427	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	39A (Tj)	18V	78mOhm @ 13A, 18V	5.6V @ 6.67mA	58 nC @ 18 V	+22V, -4V	852 pF @ 500 V	-	165W	175°C (TJ)	-	-	Through Hole	TO-247-4L
SCT3080KRC15 1200V, 31A, 4-PIN THD, TRENCH-ST Rohm Semiconductor	365	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tj)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	60 nC @ 18 V	+22V, -4V	785 pF @ 800 V	-	165W	175°C (TJ)	-	-	Through Hole	TO-247-4L
NVHL040N65S3HF SUPERFER3 FRFET AUTOMOTIVE 40MOH onsemi	430	RFQ	Datasheet	SuperFET® III, FRFET®	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	65A (Tc)	10V	40mOhm @ 32.5A, 10V	5V @ 2.1mA	157 nC @ 10 V	±30V	6655 pF @ 400 V	-	446W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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