FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
AIMZA75R060M1HXKSA1 AUTOMOTIVE_SICMOS Infineon Technologies	239	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	32A (Tj)	15V, 20V	55mOhm @ 11.1A, 20V	5.6V @ 4mA	23 nC @ 18 V	+23V, -5V	779 pF @ 500 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4
SCT4045DWATL 750V, 31A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	976	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	31A (Tc)	18V	59mOhm @ 17A, 18V	4.8V @ 8.89mA	63 nC @ 18 V	+21V, -4V	1460 pF @ 500 V	-	-	175°C (TJ)	-	-	Surface Mount	TO-263-7LA
G3F75MT12K 1200V 75M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	30A (Tc)	18V	100mOhm @ 12A, 18V	4.3V @ 9mA	48 nC @ 18 V	+22V, -10V	988 pF @ 800 V	-	127W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
CDFG6558N TR13 PBFREE SURFACE MOUNT MOSFET Central Semiconductor Corp	2,480	RFQ	Datasheet	-	8-VDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel, Depletion Mode	GaNFET (Gallium Nitride)	650 V	29A (Tc)	6V	80mOhm @ 8A, 6V	2.5V @ 30.7mA	6.2 nC @ 0 V	+7V, -6V	225 pF @ 400 V	-	1.1W (Ta), 188W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (8x8)
NVMTS0D7N06CTXG MOSFET N-CH 60V 60.5A/464A 8DFNW onsemi	2,635	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	60.5A (Ta), 464A (Tc)	10V	0.72mOhm @ 50A, 10V	4V @ 250µA	152 nC @ 10 V	±20V	11535 pF @ 30 V	-	5W (Ta), 294.6W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-DFNW (8.3x8.4)
STWA60N043DM9 N-CHANNEL 600 V, 38 MOHM TYP., 5 STMicroelectronics	144	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	56A (Tc)	10V	43mOhm @ 28A, 10V	4.5V @ 250µA	78.6 nC @ 10 V	±30V	4675 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 Long Leads
STW69N65M5 MOSFET N-CH 650V 58A TO247 STMicroelectronics	477	RFQ	Datasheet	MDmesh™ V	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	58A (Tc)	10V	45mOhm @ 29A, 10V	5V @ 250µA	143 nC @ 10 V	±25V	6420 pF @ 100 V	-	330W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3
MXB12R600DPHFC MOSFET N-CH 600V 15A IXYS	243	RFQ	Datasheet	-	ISOPLUSi5-PAK™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	13A (Tc)	-	-	-	-	-	-	-	-	-	-	-	Through Hole	ISOPLUS i4-PAC™
IPDQ65R029CFD7XTMA1 HIGH POWER_NEW Infineon Technologies	734	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	85A (Tc)	10V	29mOhm @ 35.8A, 10V	4.5V @ 1.79mA	139 nC @ 10 V	±20V	7149 pF @ 400 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1
NVH4L095N065SC1 SILICON CARBIDE (SIC) MOSFET, NC onsemi	445	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	31A (Tc)	15V, 18V	105mOhm @ 12A, 18V	4.3V @ 4mA	50 nC @ 18 V	+22V, -8V	956 pF @ 325 V	-	129W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IMZA75R040M1HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	235	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	44A (Tj)	15V, 20V	37mOhm @ 16.6A, 20V	5.6V @ 6mA	34 nC @ 18 V	+23V, -5V	1135 pF @ 500 V	-	185W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4
AIMCQ120R060M1TXTMA1 SIC_DISCRETE Infineon Technologies	850	RFQ	Datasheet	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	44A (Tc)	18V, 20V	75mOhm @ 13A, 20V	5.1V @ 4.3mA	32 nC @ 20 V	+25V, -10V	880 pF @ 800 V	-	259W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
G3F60MT06D 650V 55M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor	600	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4062KWATL 1200V, 24A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	999	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	81mOhm @ 12A, 18V	4.8V @ 6.45mA	64 nC @ 18 V	+21V, -4V	1498 pF @ 800 V	-	-	175°C (TJ)	-	-	Surface Mount	TO-263-7LA
SCT4045DWAHRTL 750V, 31A, 7-PIN SMD, TRENCH-STR Rohm Semiconductor	990	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	31A (Tc)	18V	59mOhm @ 17A, 18V	4.8V @ 8.89mA	63 nC @ 18 V	+21V, -4V	1460 pF @ 500 V	-	-	175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7LA
SCT4062KWAHRTL 1200V, 24A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	956	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	81mOhm @ 12A, 18V	4.8V @ 6.45mA	64 nC @ 18 V	+21V, -4V	1498 pF @ 800 V	-	93W	175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7LA
MSC080SMA120SCT/R MOSFET SIC 1200 V 80 MOHM PSMT Microchip Technology	1,300	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC080SMA120SDT/R MOSFET SIC 1200 V 80 MOHM TO-263 Microchip Technology	800	RFQ	Datasheet	mSiC™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Bulk	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	35A (Tc)	20V	100mOhm @ 15A, 20V	2.8V @ 1mA	64 nC @ 20 V	+23V, -10V	838 pF @ 1000 V	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-268
G3F60MT06K 650V 55M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	42A (Tc)	15V, 18V	75mOhm @ 15A, 18V	4.3V @ 7mA	45 nC @ 18 V	+22V, -10V	1322 pF @ 400 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
AIMZH120R160M1TXKSA1 SIC_DISCRETE Infineon Technologies	207	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	18V, 20V	200mOhm @ 5A, 20V	5.1V @ 1.5mA	14 nC @ 20 V	+23V, -5V	350 pF @ 800 V	-	109W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-11

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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