Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SF3008PTH DIODE GEN PURP 600V 30A TO247AD Taiwan Semiconductor Corporation	688	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	30A	1.7 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	175pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SDS065J006S3-ISBRH DIODE 650V-6A DFN8*8-4L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan DFN8	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 650 V	310pF @ 0V, 1MHz	-	-	Surface Mount	4-DFN (8x8)	-55°C ~ 175°C
SDS065J008D3-ISARH DIODE 650V-8A TO252-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO252	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.3 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	-	-	-	Surface Mount	TO-252-2L	-55°C ~ 175°C
TRS8E65H,S1Q G3 SIC-SBD 650V 8A TO-220-2L Toshiba Semiconductor and Storage	338	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	520pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
FFSD1065B DIODE SIL CARB 650V 13.5A DPAK onsemi	4,116	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	13.5A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	424pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SE30124-M3/I 30A,1200V,DO-218AB RECTIFIER Vishay	3,000	RFQ	Datasheet	-	DO-218AB	Tape & Reel (TR)	Active	Standard	1200 V	4.2A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	35pF @ 400V, 1MHz	-	-	Surface Mount	DO-218AB	-55°C ~ 175°C
VS-20ETF12FP-M3 DIODE GP 1.2KV 20A TO220-2FP Vishay General Semiconductor - Diodes Division	695	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1200 V	20A	1.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220-2 Full Pack	-40°C ~ 150°C
BSDD08G65E2 DIODE SCHOT SIC 650V 8A TO252 Bourns Inc.	5,000	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	267pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
SIT10C065 DIODE SIL CARB 650V 10A TO220AC Diotec Semiconductor	980	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
VS-APU3006HN3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	492	RFQ	Datasheet	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AC	-40°C ~ 150°C
PCDF0465G1_T0_00601 650V/4A THROUGH HOLE SILICON CAR Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	160pF @ 1V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C
FFSM0865B DIODE SIL CARB 650V 11.6A 4PQFN onsemi	2,980	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	11.6A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
SDS065J008C3-ISATH DIODE 650V-8A TO220-2L Luminus Devices Inc.	200	RFQ	Datasheet	Sanan TO220	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	25A	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	24 µA @ 650 V	395pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-20ETF04STRL-M3 DIODE GEN PURP 400V 20A TO263AB Vishay General Semiconductor - Diodes Division	7,894	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	400 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 400 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
PCDD0465GB_L2_00601 650V/4A IN TO-252AA PACKAGE SILI Panjit International Inc.	3,000	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	261pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
TRS10V65H,LQ G3 SIC-SBD 650V 10A DFN8X8 Toshiba Semiconductor and Storage	3,975	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	649pF @ 1V, 1MHz	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
IDWD30E120D7XKSA1 DIODE GEN PURP 1200V 52A TO247-2 Infineon Technologies	120	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	52A	3 V @ 30 A	Fast Recovery =< 500ns, > 5A (Io)	135 ns	20 µA @ 1200 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
D6015L52TP DIODE GP 600V 9.5A ITO220AB Littelfuse Inc.	457	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	600 V	9.5A	1.6 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	10 µA @ 600 V	-	-	-	Through Hole	ITO-220AB	-40°C ~ 125°C
SIT12C065 DIODE SIL CARB 650V 12A TO220AC Diotec Semiconductor	1,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 650 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
IDWD20E65E7XKSA1 HOME APPLIANCES 14 Infineon Technologies	220	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	42A	2.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	74 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.