FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
DMWSH120H43SM3 SIC MOSFET BVDSS: >1000V TO247 T Diodes Incorporated	6,863	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72.7A (Tc)	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	105 nC @ 15 V	+19V, -8V	2187 pF @ 1000 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
DMWSH120H43SM4 SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	2,860	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	72.7A (Tc)	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	105 nC @ 15 V	+19V, -8V	2187 pF @ 1000 V	-	341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCT040W120G3-4 SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	7,708	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGOT65R025D2AUMA1 IGOT65R025D2AUMA1 Infineon Technologies	3,963	RFQ	Datasheet	CoolGaN™	20-BFSOP (0.295", 7.50mm Width)	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	61A (Tc)	-	-	1.6V @ 6.1mA	11 nC @ 3 V	-10V	780 pF @ 400 V	-	184W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-91
IGLT65R025D2AUMA1 IGLT65R025D2AUMA1 Infineon Technologies	2,691	RFQ	Datasheet	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	67A (Tc)	-	-	1.6V @ 6.1mA	11 nC @ 3 V	-10V	780 pF @ 400 V	-	219W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8
SCTWA40N120G2V DISCRETE STMicroelectronics	7,567	RFQ	Datasheet	-	TO-247-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	36A (Tc)	18V	100mOhm @ 20A, 18V	4.9V @ 1mA	61 nC @ 18 V	+18V, -5V	1233 pF @ 800 V	-	278W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	TO-247 Long Leads
SCTWA40N120G2V-4 DISCRETE STMicroelectronics	3,763	RFQ	Datasheet	-	TO-247-4	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	36A (Tc)	18V	100mOhm @ 20A, 18V	4.9V @ 1mA	61 nC @ 18 V	+18V, -5V	1233 pF @ 800 V	-	277W (Tc)	-55°C ~ 200°C (TJ)	-	-	Through Hole	TO-247-4
SCT040H120G3AG H2PAK-7 STMicroelectronics	2,115	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	15V, 18V	54mOhm @ 16A, 18V	4.2V @ 5mA	54 nC @ 18 V	+18V, -5V	1329 pF @ 800 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
SCT040HU120G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	5,288	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
S3M0025120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	2,092	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	77A (Tc)	18V	32mOhm @ 48A, 18V	4V @ 20mA	175 nC @ 18 V	+22V, -8V	3519 pF @ 1000 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD
G3F25MT06L-TR 650V 20M TO-LL G3F SIC MOSFET GeneSiC Semiconductor	8,600	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	125A (Tc)	15V, 18V	27.5mOhm @ 35A, 18V	4.3V @ 15mA	108 nC @ 18 V	+22V, -10V	2939 pF @ 400 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
DIF065SIC030 SIC MOSFET, TO-247-4L, N, 105A, Diotec Semiconductor	2,722	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	105A (Tc)	18V	30mOhm @ 75A, 18V	4V @ 23.5mA	145 nC @ 18 V	+18V, -4V	3300 pF @ 600 V	-	-	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCTWA40N12G24AG TO247-4 STMicroelectronics	9,812	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	33A (Tc)	18V	105mOhm @ 20A, 18V	5V @ 1mA	63 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	290W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
DIW170SIC049 SIC MOSFET, TO-247-3L, N, 67A, 1 Diotec Semiconductor	6,892	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1700 V	67A (Tc)	18V	49mOhm @ 40A, 18V	4V @ 15mA	179 nC @ 18 V	+18V, -4V	3046 pF @ 1000 V	-	357W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
MXP120A045FW-GE3 SILICON CARBIDE MOSFET Vishay Siliconix	3,025	RFQ	Datasheet	MaxSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	49A (Tc)	18V, 20V	56mOhm @ 20A, 20V	2.38V @ 5mA	75.6 nC @ 18 V	+22V, -10V	1958 pF @ 800 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3L
MXP120A045FL-GE3 SILICON CARBIDE MOSFET Vishay Siliconix	8,452	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPQC60T010S7XTMA1 HIGH POWER_NEW Infineon Technologies	7,182	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	174A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.06mA	318 nC @ 12 V	±20V	11986 pF @ 300 V	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-101
SCT025H120G3-7 SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	8,556	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFR32N80Q3 MOSFET N-CH 800V 24A ISOPLUS247 IXYS	3,235	RFQ	Datasheet	HiPerFET™, Q3 Class	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	24A (Tc)	10V	300mOhm @ 16A, 10V	6.5V @ 4mA	140 nC @ 10 V	±30V	6940 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS247™
IPDQ60T010S7XTMA1 HIGH POWER_NEW Infineon Technologies	4,509	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	174A (Tc)	12V	10mOhm @ 50A, 12V	4.5V @ 3.06mA	318 nC @ 12 V	±20V	11986 pF @ 300 V	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22-1

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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