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ELECTRONIC COMPONENTS

FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AIMCQ120R020M1TXTMA1 Infineon Technologies

AIMCQ120R020M1TXTMA1

SIC_DISCRETE

Infineon Technologies

2,840
Datasheet CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 116A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 13.7mA 82 nC @ 20 V +25V, -10V 2667 pF @ 800 V - 577W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
IPQC60T010S7AXTMA1 Infineon Technologies

IPQC60T010S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

6,673
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-101
IPDQ60T010S7AXTMA1 Infineon Technologies

IPDQ60T010S7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

6,845
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 174A (Tc) 12V 10mOhm @ 50A, 12V 4.5V @ 3.06mA 318 nC @ 12 V ±20V 11986 pF @ 300 V - 694W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
SCT020W120G3-4AG STMicroelectronics

SCT020W120G3-4AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

4,205
Datasheet * - Tube Active - - - - - - - - - - - - - - - - -
SCT020HU120G3AG STMicroelectronics

SCT020HU120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

6,493
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SCT012H90G3AG STMicroelectronics

SCT012H90G3AG

H2PAK-7

STMicroelectronics

9,849
Datasheet - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 900 V 110A (Tc) 15V, 18V 15.8mOhm @ 60A, 18V 4.2V @ 10mA 138 nC @ 18 V +18V, -5V 3880 pF @ 600 V - 625W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
SCT016H120G3AG STMicroelectronics

SCT016H120G3AG

AUTOMOTIVE-GRADE SILICON CARBIDE

STMicroelectronics

3,768
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IXFT150N25X3HV Littelfuse Inc.

IXFT150N25X3HV

MOSFET N-CH 250V 150A TO268HV

Littelfuse Inc.

3,294
Datasheet HiPerFET™, Ultra X3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 250 V 150A (Tc) 10V 9mOhm @ 75A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10400 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXFT)
DMWSH120H28SM3 Diodes Incorporated

DMWSH120H28SM3

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

3,166
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DMWSH120H28SM4 Diodes Incorporated

DMWSH120H28SM4

SIC MOSFET BVDSS: >1000V TO247-4

Diodes Incorporated

3,947
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 100A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 173.7 nC @ 15 V +19V, -8V 3944 pF @ 1000 V - 429W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DIW120SIC028 Diotec Semiconductor

DIW120SIC028

SIC MOSFET, TO-247-3L, N, 118A,

Diotec Semiconductor

8,239
Datasheet - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 118A (Tc) 20V 28mOhm @ 80A, 20V 4V @ 25mA 373 nC @ 20 V +20V, -5V 5691 pF @ 1000 V - 715W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DIF120SIC022 Diotec Semiconductor

DIF120SIC022

SIC MOSFET, TO-247-4L, N, 120A,

Diotec Semiconductor

3,354
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 120A (Tc) 18V 22.3mOhm @ 75A, 18V 4V @ 23.5mA 269 nC @ 18 V +18V, -4V 4817 pF @ 1000 V - 340W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DIF120SIC028 Diotec Semiconductor

DIF120SIC028

SIC MOSFET, TO-247-4L, N, 118A,

Diotec Semiconductor

6,054
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 118A (Tc) 20V 28mOhm @ 80A, 20V 4V @ 25mA 373 nC @ 20 V +20V, -5V 5691 pF @ 1000 V - 715W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DIW065SIC015 Diotec Semiconductor

DIW065SIC015

SIC MOSFET, TO-247-3L, N, 150A,

Diotec Semiconductor

2,208
Datasheet - TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 150A (Tc) 18V 15mOhm @ 75A, 18V 4V @ 15mA 236 nC @ 20 V +15V, -4V 7169 pF @ 400 V - 550W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
DIF065SIC020 Diotec Semiconductor

DIF065SIC020

SIC MOSFET, TO-247-4L, N, 150A,

Diotec Semiconductor

6,880
Datasheet - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 150A (Tc) 18V 20mOhm @ 75A, 18V 4V @ 22mA 236 nC @ 20 V +18V, -5V 7169 pF @ 400 V - 550W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
DMWSH120H28SM3Q Diodes Incorporated

DMWSH120H28SM3Q

SIC MOSFET BVDSS: >1000V TO247 T

Diodes Incorporated

9,774
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 97.4A (Tc) 15V 28.5mOhm @ 50A, 15V 3.6V @ 17.7mA 175 nC @ 15 V +19V, -8V 3905 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
IMBG65R009M1HXTMA1 Infineon Technologies

IMBG65R009M1HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

2,232
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 170A (Tc) 18V 13.6mOhm @ 97.2A, 18V 5.7V @ 32.4mA 176 nC @ 18 V +23V, -5V 6054 pF @ 400 V - 555W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
IXTN400N20X4 IXYS

IXTN400N20X4

Ultra Junction X4-Class Power

IXYS

3,838
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 340A (Tc) 10V 3mOhm @ 100A, 10V 4.5V @ 250µA 348 nC @ 10 V ±20V 27700 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B - miniBLOC
C3M0032120J1-TR Wolfspeed, Inc.

C3M0032120J1-TR

SIC, MOSFET, 32M, 1200V, TO-263-

Wolfspeed, Inc.

2,493
Datasheet C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 41.4A, 15V 3.6V @ 11.5mA 111 nC @ 15 V +15V, -4V 3424 pF @ 1000 V - 277W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
IXTN500N20X4 IXYS

IXTN500N20X4

Ultra Junction X4-Class Power

IXYS

6,952
Datasheet - SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 200 V 500A (Tc) 10V 1.99mOhm @ 100A, 10V 4.5V @ 250µA 535 nC @ 10 V ±20V 41500 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B - miniBLOC
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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