FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SIHB100N65E-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	2,191	RFQ	Datasheet	E	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	100mOhm @ 12A, 10V	5V @ 250µA	62 nC @ 10 V	±30V	2137 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)
DIW065SIC080 SIC MOSFET, TO-247-3L, N, 36A, 6 Diotec Semiconductor	7,072	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	36A (Tc)	18V	80mOhm @ 15A, 18V	4V @ 5mA	75 nC @ 20 V	+18V, -5V	1480 pF @ 600 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
EPC2304 TRANS GAN 200V .005OHM 7QFN EPC	2,787	RFQ	Datasheet	eGaN®	7-PowerWQFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	102A (Ta)	5V	3.1mOhm @ 32A, 5V	2.5V @ 8mA	24 nC @ 5 V	+6V, -4V	3195 pF @ 100 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	7-QFN (3x5)
AUIRF7799L2TR MOSFET N-CH 250V 375A DIRECTFET Infineon Technologies	6,719	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric L8	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	250 V	375A (Tc)	10V	38mOhm @ 21A, 10V	5V @ 250µA	165 nC @ 10 V	±30V	6714 pF @ 25 V	-	4.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DirectFET™ Isometric L8
IMBG65R040M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	7,236	RFQ	Datasheet	CoolSiC™ Gen 2	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	49A (Tc)	15V, 20V	49mOhm @ 22.9A, 18V	5.6V @ 4.6mA	28 nC @ 18 V	+23V, -7V	997 pF @ 400 V	-	197W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12
TK040N60Z1,S1F 600V DTMOS6 TO-247 40MOHM Toshiba Semiconductor and Storage	6,022	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	52A (Ta)	10V	400mOhm @ 21.2A, 10V	4V @ 2.4mA	85 nC @ 10 V	±30V	5200 pF @ 300 V	-	297W (Tc)	150°C	-	-	Through Hole	TO-247
SIHH100N65E-T1-GE3 E SERIES POWER MOSFET 650 V (D- Vishay Siliconix	6,404	RFQ	Datasheet	E	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	28A (Tc)	10V	100mOhm @ 12A, 10V	5V @ 250µA	62 nC @ 10 V	±30V	2137 pF @ 100 V	-	184W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8
G3F60MT06L-TR 650V 55M TO-LL G3F SIC MOSFET GeneSiC Semiconductor	3,954	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	48A (Tc)	15V, 18V	75mOhm @ 15A, 18V	4.3V @ 7mA	45 nC @ 18 V	+22V, -10V	1322 pF @ 400 V	-	185W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
IPQC60R040S7XTMA1 MOSFET Infineon Technologies	6,559	RFQ	Datasheet	CoolMOS™ S7	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	14A (Tc)	12V	40mOhm @ 13A, 12V	4.5V @ 790µA	83 nC @ 12 V	±20V	-	-	272W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
IMW65R060M2HXKSA1 IMW65R060M2HXKSA1 Infineon Technologies	2,932	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	32.8A (Tc)	15V, 20V	55mOhm @ 15.4A, 20V	5.6V @ 3.1mA	19 nC @ 18 V	+23V, -7V	669 pF @ 400 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
IPZA60R045P7XKSA1 MOSFET N-CH 650V 61A TO247-4-3 Infineon Technologies	8,983	RFQ	Datasheet	CoolMOS™ P7	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	61A (Tc)	10V	45mOhm @ 22.5A, 10V	4V @ 1.08mA	90 nC @ 10 V	±20V	3891 pF @ 400 V	-	201W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4-3
PSMN1R0-100ASEJ PSMN1R0-100ASE/SOT8000A/CCPAK1 Nexperia USA Inc.	2,119	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	430A (Tc)	10V	1.04mOhm @ 25A, 10V	3.6V @ 1mA	509 nC @ 10 V	±20V	36460 pF @ 50 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
PSMN1R0-80CSEJ PSMN1R0-80CSE/SOT8005A/CCPAK12 Nexperia USA Inc.	5,647	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	495A (Tc)	10V	0.95Ohm @ 25A, 10V	3.6V @ 1mA	504 nC @ 10 V	±20V	36802 pF @ 40 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i
GS61008P-MR GS61008P-MR Infineon Technologies Canada Inc.	3,880	RFQ	Datasheet	-	5-SMD, No Lead	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	90A (Tc)	6V	9.5mOhm @ 27A, 6V	2.6V @ 7mA	8 nC @ 6 V	+7V, -10V	600 pF @ 50 V	-	-	-55°C ~ 150°C	-	-	Surface Mount	-
IMW65R040M2HXKSA1 SILICON CARBIDE MOSFET Infineon Technologies	8	RFQ	Datasheet	CoolSiC™ Gen 2	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	46A (Tc)	15V, 20V	36mOhm @ 22.9A, 20V	5.6V @ 4.6mA	28 nC @ 18 V	+23V, -7V	997 pF @ 400 V	-	172W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-40
AIMZH120R120M1TXKSA1 SIC_DISCRETE Infineon Technologies	20	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	18V, 20V	150mOhm @ 7A, 20V	5.1V @ 2.2mA	18 nC @ 20 V	+23V, -5V	458 pF @ 800 V	-	133W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-4-11
IPT025N15NM6ATMA1 TRENCH >=100V Infineon Technologies	8,457	RFQ	Datasheet	OptiMOS™ 6	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Ta), 263A (Tc)	8V, 15V	2.4mOhm @ 120A, 15V	4V @ 275µA	137 nC @ 10 V	±20V	9800 pF @ 75 V	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-1
IPTG025N15NM6ATMA1 TRENCH >=100V Infineon Technologies	4,646	RFQ	Datasheet	OptiMOS™ 6	8-PowerSMD, Gull Wing	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Ta), 264A (Tc)	8V, 15V	2.4mOhm @ 120A, 15V	4V @ 275µA	137 nC @ 10 V	±20V	9800 pF @ 75 V	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOG-8-1
PSMN1R0-100ASFJ PSMN1R0-100ASF/SOT8000A/CCPAK1 Nexperia USA Inc.	3,861	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	460A (Tc)	10V	0.99mOhm @ 25A, 10V	4V @ 1mA	539 nC @ 10 V	±20V	33624 pF @ 50 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212
TK31J60W,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	25	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.