FETs, MOSFETs
Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TK110Z65Z,S1FPOWER MOSFET TRANSISTOR TO-247-4 |
20 |
|
Datasheet | DTMOSVI | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
|
SIHH125N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
9,506 |
|
Datasheet | E | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 8 x 8 |
|
PSMN1R1-80ASFJNEXTPOWER 80 V, 1.11 MOHM, N-CHA |
8,658 |
|
Datasheet | - | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 385A (Tc) | 7V, 10V | 1.11mOhm @ 25A, 10V | 4V @ 1mA | 363 nC @ 10 V | ±20V | 24627 pF @ 40 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
|
PSMN1R1-80CSFJNEXTPOWER 80 V, 1.16 MOHM, N-CHA |
4,772 |
|
Datasheet | - | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 400A (Ta) | 7V, 10V | 1.16mOhm @ 25A, 10V | 4V @ 1mA | 206 nC @ 10 V | ±20V | 15363 pF @ 40 V | - | 1.071kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
|
SIHK125N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
3,888 |
|
Datasheet | E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
|
IXTH450P2MOSFET N-CH 500V 16A TO247 |
3,121 |
|
Datasheet | PolarP2™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 330mOhm @ 8A, 10V | 4.5V @ 250µA | 43 nC @ 10 V | ±30V | 2530 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
MXP120A250FL-GE3SILICON CARBIDE MOSFET |
9,944 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TK065Z65Z,S1FPOWER MOSFET TRANSISTOR TO-247-4 |
25 |
|
Datasheet | DTMOSVI | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | 150°C | - | - | Through Hole | TO-247-4L(T) |
|
PJMH105N60FRC_T0_00601600V 105mohm 35A SJ MOSFET |
6,356 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SIHG70N60EF-GE3MOSFET N-CH 600V 70A TO247AC |
7,948 |
|
Datasheet | - | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 38mOhm @ 35A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±30V | 7500 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IQFH39N04NM6ATMA1TRENCH <= 40V |
2,674 |
|
Datasheet | OptiMOS™ 6 | 12-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 63A (Ta), 600A (Tc) | 6V, 10V | 0.39mOhm @ 100A, 10V | 2.8V @ 1.05mA | 273 nC @ 10 V | ±20V | 16400 pF @ 20 V | - | 3W (Ta), 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSON-12-1 |
|
TK35A65W5,S5XMOSFET N-CH 650V 35A TO220SIS |
22 |
|
Datasheet | DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
SIHG125N65E-GE3E SERIES POWER MOSFET 650 V (D- |
3,526 |
|
Datasheet | E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 27A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IGLT65R110D2ATMA1IGLT65R110D2ATMA1 |
7,608 |
|
Datasheet | CoolGaN™ | 16-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 15A (Tc) | - | - | 1.6V @ 1.3mA | 2.4 nC @ 3 V | -10V | 170 pF @ 400 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-16-8 |
|
IPP022N12NM6AKSA1TRENCH >=100V |
9,464 |
|
Datasheet | OptiMOS™ 6 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 29A (Ta), 203A (Tc) | 8V, 10V | 2.2mOhm @ 100A, 10V | 3.6V @ 275µA | 141 nC @ 10 V | ±20V | 11000 pF @ 60 V | - | 3.8W (Ta), 395W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
SIHK100N65E-T1-GE3E SERIES POWER MOSFET 650 V (D- |
6,498 |
|
Datasheet | E | 8-PowerBSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK®10 x 12 |
|
CCSPG1560N TR PBFREESURFACE MOUNT MOSFET |
2,095 |
|
Datasheet | - | 25-PowerVFQFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 150 V | 60A (Tj) | 5V | 7mOhm @ 20A, 5V | 2.1V @ 7mA | 13 nC @ 5 V | +6V, -4V | 1450 pF @ 75 V | - | 200mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 25-CSP (4x6) |
|
G3F320MT12J-TR1200V 320M TO-263-7 G3F SIC MOSF |
4,982 |
|
Datasheet | - | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TK31A60W,S4VXMOSFET N-CH 600V 30.8A TO220SIS |
19 |
|
Datasheet | DTMOSIV | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
|
SIHP100N65E-GE3E SERIES POWER MOSFET 650 V (D- |
8,627 |
|
Datasheet | E | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 100mOhm @ 12A, 10V | 5V @ 250µA | 62 nC @ 10 V | ±30V | 2137 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
Frequently Asked Questions
What are FETs, MOSFETs components used for?
FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right FETs, MOSFETs part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
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