FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
E3M0160120D SIC, MOSFET, 160M, 1200V, TO-247 Wolfspeed, Inc.	3,369	RFQ	Datasheet	E Series	TO-247-3	Tray	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	17.9A (Tc)	15V	208mOhm @ 8.5A, 15V	3.6V @ 2.33mA	33 nC @ 15 V	-8V, +19V	730 pF @ 1000 V	-	103W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3
IPTC025N15NM6ATMA1 TRENCH >=100V Infineon Technologies	3,259	RFQ	Datasheet	OptiMOS™ 6	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	26A (Ta), 264A (Tc)	8V, 15V	2.4mOhm @ 120A, 15V	4V @ 275µA	137 nC @ 10 V	±20V	9800 pF @ 75 V	-	3.8W (Ta), 395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-2
IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1 Infineon Technologies	4,190	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	38A (Tc)	15V, 18V	53mOhm @ 13A, 18V	5.1V @ 4.1mA	30 nC @ 18 V	+23V, -7V	1010 pF @ 800 V	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
CCSPG1510N TR PBFREE SURFACE MOUNT MOSFET Central Semiconductor Corp	9,174	RFQ	Datasheet	-	25-PowerVFQFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	150 V	100A (Tj)	5V	3.9mOhm @ 30A, 5V	2.1V @ 12mA	20 nC @ 5 V	+6V, -4V	2200 pF @ 75 V	-	200mW (Ta)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	25-CSP (4x6)
IGLT65R055D2ATMA1 IGLT65R055D2ATMA1 Infineon Technologies	7,300	RFQ	Datasheet	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	31A (Tc)	-	-	1.6V @ 2.6mA	4.7 nC @ 3 V	-10V	340 pF @ 400 V	-	102W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8
IGOT65R055D2AUMA1 IGOT65R055D2AUMA1 Infineon Technologies	6,977	RFQ	Datasheet	CoolGaN™	20-BFSOP (0.295", 7.50mm Width)	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	28A (Tc)	-	-	1.6V @ 2.6mA	4.7 nC @ 3 V	-10V	340 pF @ 400 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-91
AIMBG120R160M1XTMA1 SIC_DISCRETE Infineon Technologies	2,986	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	18V, 20V	200mOhm @ 5A, 20V	5.1V @ 1.6mA	14 nC @ 20 V	+23V, -5V	350 pF @ 800 V	-	106W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-12
G3R60MT07J-TR 650V 60M TO-263-7 G3R SIC MOSFET GeneSiC Semiconductor	8,000	RFQ	Datasheet	G3R™, LoRing™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	44A (Tc)	15V	-	-	-	-	-	-	182W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7
MXP120A080FL-GE3 SILICON CARBIDE MOSFET Vishay Siliconix	5,041	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMWSH120H90SM4 SIC MOSFET BVDSS: >1000V TO247-4 Diodes Incorporated	7,205	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	40A (Tc)	15V	97.5mOhm @ 20A, 15V	3.5V @ 5mA	51.1 nC @ 15 V	+19V, -8V	1112 pF @ 1000 V	-	235W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
DMWSH120H90SM3 SIC MOSFET BVDSS: >1000V TO247 T Diodes Incorporated	2,904	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	41A (Tc)	15V	97.5mOhm @ 20A, 15V	3.5V @ 5mA	50.9 nC @ 15 V	+19V, -8V	1090 pF @ 1000 V	-	246W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
SCT070H120G3-7 SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	6,906	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTBG023N065M3S SIC MOS D2PAK-7L 23MOHM 650V M3S onsemi	7,818	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	15V, 18V	33mOhm @ 20A, 18V	4V @ 10mA	69 nC @ 18 V	+22V, -8V	1951 pF @ 400 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7
IMLT65R033M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	8,373	RFQ	Datasheet	CoolSiC™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	68A (Tc)	15V, 20V	30mOhm @ 27.9A, 20V	5.6V @ 5.7mA	34 nC @ 18 V	+23V, -7V	1213 pF @ 400 V	-	312W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-6
G3F45MT06L-TR 650V 40M TO-LL G3F SIC MOSFET GeneSiC Semiconductor	8,412	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	61A (Tc)	15V, 18V	54mOhm @ 20A, 18V	4.3V @ 8mA	55 nC @ 18 V	+22V, -10V	1640 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
IPT60R016CM8XTMA1 IPT60R016CM8XTMA1 Infineon Technologies	6,939	RFQ	Datasheet	CoolMOS™	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	142A (Tc)	10V	16mOhm @ 62.5A, 10V	4.7V @ 1.48mA	171 nC @ 10 V	±20V	7545 pF @ 400 V	-	694W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2
STW70N65DM6-4 MOSFET N-CH 650V 68A TO247-4 STMicroelectronics	7,461	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	68A (Tc)	10V	40mOhm @ 34A, 10V	4.75V @ 250µA	125 nC @ 10 V	±25V	4900 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
DIW065SIC049 SIC MOSFET, TO-247-3L, N, 60A, 6 Diotec Semiconductor	6,490	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	60A (Tc)	18V	49mOhm @ 30A, 18V	4V @ 10mA	128 nC @ 20 V	+18V, -5V	2612 pF @ 600 V	-	550W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247
MSC035SMA070B4N MOSFET SIC 700 V 35 MOHM TO-247- Microchip Technology	8,067	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	700 V	75A (Tc)	18V, 20V	44mOhm @ 30A, 20V	5V @ 2mA	93 nC @ 20 V	+23V, -10V	1806 pF @ 700 V	-	304W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
SCT040W65G3-4 SILICON CARBIDE POWER MOSFET 650 STMicroelectronics	2,863	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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