FETs, MOSFETs

Explore FETs, MOSFETs parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
STWA65N045M9 N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics	4,116	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	54A (Tc)	10V	45mOhm @ 28A, 10V	4.2V @ 250µA	80 nC @ 10 V	±30V	4610 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 Long Leads
SCT070W120G3-4 AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	9,992	RFQ	Datasheet	*	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies	3,613	RFQ	Datasheet	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	38A (Tc)	-	-	1.6V @ 3.3mA	6 nC @ 3 V	-10V	430 pF @ 400 V	-	124W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8
IMZC120R034M2HXKSA1 IMZC120R034M2HXKSA1 Infineon Technologies	2,087	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	55A (Tc)	15V, 18V	34mOhm @ 20A, 18V	5.1V @ 6.4mA	45 nC @ 18 V	+23V, -7V	1510 pF @ 800 V	-	244W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
IGOT65R045D2AUMA1 IGOT65R045D2AUMA1 Infineon Technologies	5,599	RFQ	Datasheet	CoolGaN™	20-BFSOP (0.295", 7.50mm Width)	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	-	-	1.6V @ 3.3mA	6 nC @ 3 V	-10V	430 pF @ 400 V	-	109W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-91
NVBG032N065M3S SIC MOS D2PAK-7L 32MOHM 650V M3S onsemi	3,733	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	52A (Tc)	15V, 18V	44mOhm @ 15A, 18V	4V @ 7.5mA	55 nC @ 18 V	+22V, -8V	1409 pF @ 400 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7
IMLT65R026M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	7,869	RFQ	Datasheet	CoolSiC™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	82A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	5.6V @ 7mA	42 nC @ 18 V	+23V, -7V	1499 pF @ 400 V	-	365W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-6
DMWSH120H90SM3Q SIC MOSFET BVDSS: >1000V TO247 T Diodes Incorporated	2,149	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	97.5mOhm @ 20A, 15V	3.5V @ 5mA	50.9 nC @ 15 V	+19V, -8V	1090 pF @ 1000 V	-	246W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247
SCT070H120G3AG H2PAK-7 STMicroelectronics	9,135	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	15V, 18V	87mOhm @ 15A, 18V	4.2V @ 1mA	37 nC @ 18 V	+18V, -5V	900 pF @ 850 V	-	223W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	H2PAK-7
DIF120SIC053 SIC MOSFET, TO-247-4L, N, 65A, 1 Diotec Semiconductor	5,228	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	65A (Tc)	18V	53mOhm @ 33A, 18V	4V @ 9.5mA	121 nC @ 15 V	+18V, -4V	2070 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
PJMH042N60FRC_T0_00201 600V 42mohm 69A SJ MOSFET Panjit International Inc.	4,737	RFQ	Datasheet	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies	6,000	RFQ	Datasheet	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	47A (Tc)	-	-	1.6V @ 4.2mA	7.7 nC @ 3 V	-10V	540 pF @ 400 V	-	154W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8
G3F33MT06L-TR 650V 27M TO-LL G3F SIC MOSFET GeneSiC Semiconductor	5,791	RFQ	Datasheet	-	8-PowerSFN	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	90A (Tc)	15V, 18V	38mOhm @ 26A, 18V	4.3V @ 12mA	81 nC @ 18 V	+22V, -10V	2394 pF @ 400 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TOLL
IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Infineon Technologies	8,956	RFQ	Datasheet	CoolGaN™	20-BFSOP (0.295", 7.50mm Width)	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	44A (Tc)	-	-	1.6V @ 4.2mA	-	-10V	540 pF @ 400 V	-	134W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-DSO-20-91
IPQC60R017S7AXTMA1 MOSFET Infineon Technologies	9,407	RFQ	Datasheet	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	12V	17mOhm @ 29A, 12V	4.5V @ 1.89mA	196 nC @ 12 V	±20V	7370 pF @ 300 V	-	500W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
IMZA65R026M2HXKSA1 IMZA65R026M2HXKSA1 Infineon Technologies	2,166	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	650 V	64A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	5.6V @ 7mA	42 nC @ 18 V	+23V, -7V	1499 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8
SCT070W120G3-4AG TO247-4 STMicroelectronics	4,612	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	15V, 18V	87mOhm @ 15A, 18V	4.2V @ 1mA	41 nC @ 18 V	+18V, -5V	900 pF @ 850 V	-	236W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4
SCT070HU120G3AG HU3PAK STMicroelectronics	6,560	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	15V, 18V	87mOhm @ 15A, 18V	4.2V @ 1mA	37 nC @ 18 V	+22V, -10V	900 pF @ 850 V	-	223W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	HU3PAK
E3M0120090J-TR SIC, MOSFET, 120M, 900V, TO-263- Wolfspeed, Inc.	8,967	RFQ	Datasheet	E	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	900 V	22A (Tc)	15V	155mOhm @ 15A, 15V	3.5V @ 3mA	18 nC @ 15 V	+15V, -4V	414 pF @ 600 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7
IMT65R022M1HXUMA1 SILICON CARBIDE MOSFET Infineon Technologies	7,152	RFQ	Datasheet	CoolSiC™	8-PowerSFN	Tape & Reel (TR)	Active	-	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-2

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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