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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK100A08N1,S4X Toshiba Semiconductor and Storage

TK100A08N1,S4X

MOSFET N-CH 80V 100A TO220SIS

Toshiba Semiconductor and Storage

9,581
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8A60W5,S5VX Toshiba Semiconductor and Storage

TK8A60W5,S5VX

MOSFET N-CH 600V 8A TO220SIS

Toshiba Semiconductor and Storage

5,085
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Ta) 10V 540mOhm @ 4A, 10V 4.5V @ 400µA 22 nC @ 10 V ±30V 590 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK17N65W,S1F Toshiba Semiconductor and Storage

TK17N65W,S1F

MOSFET N-CH 650V 17.3A TO247

Toshiba Semiconductor and Storage

7,679
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 200mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Through Hole TO-247
TK40E10N1,S1X Toshiba Semiconductor and Storage

TK40E10N1,S1X

MOSFET N CH 100V 90A TO220

Toshiba Semiconductor and Storage

24
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 8.2mOhm @ 20A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3000 pF @ 50 V - 126W (Tc) 150°C (TJ) - - Through Hole TO-220
TK25E60X,S1X Toshiba Semiconductor and Storage

TK25E60X,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage

9,253
Datasheet DTMOSIV-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) - - Through Hole TO-220
TK65A10N1,S4X Toshiba Semiconductor and Storage

TK65A10N1,S4X

MOSFET N-CH 100V 65A TO220SIS

Toshiba Semiconductor and Storage

4,735
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 4.8mOhm @ 32.5A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5400 pF @ 50 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK14E65W5,S1X Toshiba Semiconductor and Storage

TK14E65W5,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage

8,556
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
TK17V65W,LQ Toshiba Semiconductor and Storage

TK17V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

14
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 210mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 156W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
TK31N60W,S1VF Toshiba Semiconductor and Storage

TK31N60W,S1VF

MOSFET N CH 600V 30.8A TO247

Toshiba Semiconductor and Storage

7,400
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) - - Through Hole TO-247
TK16J60W5,S1VQ Toshiba Semiconductor and Storage

TK16J60W5,S1VQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

7
Datasheet - TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C - - Through Hole TO-3P(N)
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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