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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK110E10PL,S1X Toshiba Semiconductor and Storage

TK110E10PL,S1X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

5,429
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 10.7mOhm @ 21A, 10V 2.5V @ 300µA 33 nC @ 10 V ±20V 2040 pF @ 50 V - 87W (Tc) 175°C - - Through Hole TO-220
TK22A10N1,S4X Toshiba Semiconductor and Storage

TK22A10N1,S4X

MOSFET N-CH 100V 22A TO220SIS

Toshiba Semiconductor and Storage

1
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 13.8mOhm @ 11A, 10V 4V @ 300µA 28 nC @ 10 V ±20V 1800 pF @ 50 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK42A12N1,S4X Toshiba Semiconductor and Storage

TK42A12N1,S4X

MOSFET N-CH 120V 42A TO220SIS

Toshiba Semiconductor and Storage

9,325
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 120 V 42A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK11A65W,S5X Toshiba Semiconductor and Storage

TK11A65W,S5X

MOSFET N-CH 650V 11.1A TO220SIS

Toshiba Semiconductor and Storage

6
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Ta) 10V 390mOhm @ 5.5A, 10V 3.5V @ 450µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK32E12N1,S1X Toshiba Semiconductor and Storage

TK32E12N1,S1X

MOSFET N CH 120V 60A TO-220

Toshiba Semiconductor and Storage

5,659
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 60A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 98W (Tc) 150°C (TJ) - - Through Hole TO-220
TK5R3E08QM,S1X Toshiba Semiconductor and Storage

TK5R3E08QM,S1X

UMOS10 TO-220AB 80V 5.3MOHM

Toshiba Semiconductor and Storage

6
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 5.3mOhm @ 50A, 10V 3.5V @ 700µA 55 nC @ 10 V ±20V 3980 pF @ 40 V - 150W (Tc) 175°C - - Through Hole TO-220
TK3R3A06PL,S4X Toshiba Semiconductor and Storage

TK3R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

6,374
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 40A, 10V 2.5V @ 700µA 71 nC @ 10 V ±20V 5000 pF @ 30 V - 42W (Tc) 175°C - - Through Hole TO-220SIS
TK6A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A65D(STA4,Q,M)

MOSFET N-CH 650V 6A TO220SIS

Toshiba Semiconductor and Storage

20
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Ta) 10V 1.11Ohm @ 3A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK290A65Y,S4X Toshiba Semiconductor and Storage

TK290A65Y,S4X

MOSFET N-CH 650V 11.5A TO220SIS

Toshiba Semiconductor and Storage

3,566
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK9A90E,S4X Toshiba Semiconductor and Storage

TK9A90E,S4X

MOSFET N-CH 900V 9A TO220SIS

Toshiba Semiconductor and Storage

24
Datasheet π-MOSVIII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Ta) 10V 1.3Ohm @ 4.5A, 10V 4V @ 900µA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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