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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK35A65W,S5X Toshiba Semiconductor and Storage

TK35A65W,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage

13
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK39N60X,S1F Toshiba Semiconductor and Storage

TK39N60X,S1F

MOSFET N-CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

14
Datasheet DTMOSIV-H TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 12.5A, 10V 3.5V @ 1.9mA 85 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TK35N65W,S1F Toshiba Semiconductor and Storage

TK35N65W,S1F

MOSFET N-CH 650V 35A TO247

Toshiba Semiconductor and Storage

5
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 270W (Tc) 150°C (TJ) - - Through Hole TO-247
TK62J60W,S1VQ Toshiba Semiconductor and Storage

TK62J60W,S1VQ

MOSFET N-CH 600V 61.8A TO3P

Toshiba Semiconductor and Storage

2
Datasheet DTMOSIV TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 38mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
TPC8134,LQ(S Toshiba Semiconductor and Storage

TPC8134,LQ(S

MOSFET P-CH 40V 5A 8SOP

Toshiba Semiconductor and Storage

7,056
Datasheet U-MOSVI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 5A (Ta) 4.5V, 10V 52mOhm @ 2.5A, 10V 2V @ 100µA 20 nC @ 10 V +20V, -25V 890 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
TK2Q60D(Q) Toshiba Semiconductor and Storage

TK2Q60D(Q)

MOSFET N-CH 600V 2A PW-MOLD2

Toshiba Semiconductor and Storage

8,512
Datasheet π-MOSVII TO-251-3 Stub Leads, IPAK Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Ta) 10V 4.3Ohm @ 1A, 10V 4.4V @ 1mA 7 nC @ 10 V ±30V 280 pF @ 25 V - 60W (Tc) 150°C (TJ) - - Through Hole PW-MOLD2
TPH2R903PL,L1Q Toshiba Semiconductor and Storage

TPH2R903PL,L1Q

PB-FPOWERMOSFETTRANSISTORSOP8-AD

Toshiba Semiconductor and Storage

7,519
Datasheet U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 2.9mOhm @ 35A, 10V 2.1V @ 200µA 26 nC @ 10 V ±20V 2300 pF @ 15 V - 960mW (Ta), 81W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5)
TK3A65DA(STA4,QM) Toshiba Semiconductor and Storage

TK3A65DA(STA4,QM)

MOSFET N-CH 650V 2.5A TO220SIS

Toshiba Semiconductor and Storage

3,536
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 2.5A (Ta) 10V 2.51Ohm @ 1.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK8R2E06PL,S1X Toshiba Semiconductor and Storage

TK8R2E06PL,S1X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

9,416
Datasheet U-MOSIX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.2mOhm @ 25A, 10V 2.5V @ 300µA 28 nC @ 10 V ±20V 1990 pF @ 30 V - 81W (Tc) 175°C - - Through Hole TO-220
TK5A65W,S5X Toshiba Semiconductor and Storage

TK5A65W,S5X

MOSFET N-CH 650V 5.2A TO220SIS

Toshiba Semiconductor and Storage

8,447
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Ta) 10V 1.2Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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