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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK290A60Y,S4X Toshiba Semiconductor and Storage

TK290A60Y,S4X

MOSFET N-CH 600V 11.5A TO220SIS

Toshiba Semiconductor and Storage

7,408
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A60W,S4VX Toshiba Semiconductor and Storage

TK5A60W,S4VX

MOSFET N-CH 600V 5.4A TO220SIS

Toshiba Semiconductor and Storage

9,011
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK1K7A60F,S4X Toshiba Semiconductor and Storage

TK1K7A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

1
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4V @ 460µA 16 nC @ 10 V ±30V 560 pF @ 300 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK3R2A08QM,S4X Toshiba Semiconductor and Storage

TK3R2A08QM,S4X

UMOS10 TO-220SIS 80V 3.2MOHM

Toshiba Semiconductor and Storage

8,113
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 92A (Tc) 6V, 10V 3.2mOhm @ 46A, 10V 3.5V @ 1.3mA 102 nC @ 10 V ±20V 7670 pF @ 40 V - 45W (Tc) 175°C - - Through Hole TO-220SIS
TK3A60DA(Q,M) Toshiba Semiconductor and Storage

TK3A60DA(Q,M)

MOSFET N-CH 600V 2.5A TO220SIS

Toshiba Semiconductor and Storage

1
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Ta) 10V 2.8Ohm @ 1.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK58A06N1,S4X Toshiba Semiconductor and Storage

TK58A06N1,S4X

MOSFET N-CH 60V 58A TO220SIS

Toshiba Semiconductor and Storage

4,526
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Tc) 10V 5.4mOhm @ 29A, 10V 4V @ 500µA 46 nC @ 10 V ±20V 3400 pF @ 30 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK16E60W5,S1VX Toshiba Semiconductor and Storage

TK16E60W5,S1VX

MOSFET N-CH 600V 15.8A TO220

Toshiba Semiconductor and Storage

4,002
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 230mOhm @ 7.9A, 10V 4.5V @ 790µA 43 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C (TJ) - - Through Hole TO-220
TK560A65Y,S4X Toshiba Semiconductor and Storage

TK560A65Y,S4X

MOSFET N-CH 650V 7A TO220SIS

Toshiba Semiconductor and Storage

5
Datasheet DTMOSV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 560mOhm @ 3.5A, 10V 4V @ 240µA 14.5 nC @ 10 V ±30V 380 pF @ 300 V - 30W 150°C (TJ) - - Through Hole TO-220SIS
TK7P60W5,RVQ Toshiba Semiconductor and Storage

TK7P60W5,RVQ

MOSFET N-CH 600V 7A DPAK

Toshiba Semiconductor and Storage

3,950
Datasheet DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 670mOhm @ 3.5A, 10V 4.5V @ 350µA 16 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK12E80W,S1X Toshiba Semiconductor and Storage

TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220

Toshiba Semiconductor and Storage

8,460
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11.5A (Ta) 10V 450mOhm @ 5.8A, 10V 4V @ 570µA 23 nC @ 10 V ±20V 1400 pF @ 300 V - 165W (Tc) 150°C - - Through Hole TO-220
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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