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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK62N60W,S1VF Toshiba Semiconductor and Storage

TK62N60W,S1VF

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage

8,182
Datasheet DTMOSIV TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V - 400W (Tc) 150°C (TJ) - - Through Hole TO-247
TK100L60W,VQ Toshiba Semiconductor and Storage

TK100L60W,VQ

MOSFET N-CH 600V 100A TO3P

Toshiba Semiconductor and Storage

3
Datasheet DTMOSIV TO-3PL Tube Active N-Channel MOSFET (Metal Oxide) 600 V 100A (Tc) 10V 18mOhm @ 50A, 10V 3.7V @ 5mA 360 nC @ 10 V ±30V 15000 pF @ 30 V - 797W (Tc) 150°C (TJ) - - Through Hole TO-3P(L)
SSM6J213FE(TE85L,F Toshiba Semiconductor and Storage

SSM6J213FE(TE85L,F

MOSFET P CH 20V 2.6A ES6

Toshiba Semiconductor and Storage

8,793
Datasheet U-MOSVI SOT-563, SOT-666 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount ES6
SSM5H08TU,LF Toshiba Semiconductor and Storage

SSM5H08TU,LF

MOSFET N-CH 20V 1.5A UFV

Toshiba Semiconductor and Storage

2
Datasheet U-MOSIII 6-SMD (5 Leads), Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4V 160mOhm @ 750mA, 4V 1.1V @ 100µA - ±12V 125 pF @ 10 V Schottky Diode (Isolated) 500mW (Ta) 150°C - - Surface Mount UFV
TK2K2A60F,S4X Toshiba Semiconductor and Storage

TK2K2A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

5,328
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4V @ 350µA 13 nC @ 10 V ±30V 450 pF @ 300 V - 30W (Tc) 150°C - - Through Hole TO-220SIS
TK1K9A60F,S4X Toshiba Semiconductor and Storage

TK1K9A60F,S4X

MOSFET N-CH 600V 3.7A TO220SIS

Toshiba Semiconductor and Storage

4,302
Datasheet U-MOSIX TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 1.9Ohm @ 1.9A, 10V 4V @ 400µA 14 nC @ 10 V ±30V 490 pF @ 300 V - 30W (Tc) 150°C - - Through Hole TO-220SIS
SSM6J212FE,LF Toshiba Semiconductor and Storage

SSM6J212FE,LF

MOSFET P-CH 20V 4A ES6

Toshiba Semiconductor and Storage

7,347
Datasheet U-MOSVI SOT-563, SOT-666 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 1.5V, 4.5V 40.7mOhm @ 3A, 4.5V 1V @ 1mA 14.1 nC @ 4.5 V ±8V 970 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount ES6
SSM3J140TU,LXHF Toshiba Semiconductor and Storage

SSM3J140TU,LXHF

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Toshiba Semiconductor and Storage

5,613
Datasheet U-MOSVI 3-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.5V, 4.5V 25.8mOhm @ 4A, 4.5V 1V @ 1mA 24.8 nC @ 4.5 V +6V, -8V 1800 pF @ 10 V - 500mW (Ta) 150°C Automotive AEC-Q101 Surface Mount UFM
TK58E06N1,S1X Toshiba Semiconductor and Storage

TK58E06N1,S1X

MOSFET N-CH 60V 58A TO220

Toshiba Semiconductor and Storage

8,657
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 58A (Ta) 10V 5.4mOhm @ 29A, 10V 4V @ 500µA 46 nC @ 10 V ±20V 3400 pF @ 30 V - 110W (Tc) 150°C (TJ) - - Through Hole TO-220
TK34A10N1,S4X Toshiba Semiconductor and Storage

TK34A10N1,S4X

MOSFET N-CH 100V 34A TO220SIS

Toshiba Semiconductor and Storage

6,833
Datasheet U-MOSVIII-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 9.5mOhm @ 17A, 10V 4V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 50 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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