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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK3A90E,S4X Toshiba Semiconductor and Storage

TK3A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

8,738
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 2.5A (Ta) 10V 4.6Ohm @ 1.3A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 650 pF @ 25 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
TK6A45DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A45DA(STA4,Q,M)

MOSFET N-CH 450V 5.5A TO220SIS

Toshiba Semiconductor and Storage

21
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 5.5A (Ta) 10V 1.35Ohm @ 2.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) - - Through Hole TO-220SIS
TPC8133,LQ(S Toshiba Semiconductor and Storage

TPC8133,LQ(S

MOSFET P-CH 40V 9A 8SOP

Toshiba Semiconductor and Storage

20
Datasheet U-MOSVI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 9A (Ta) 4.5V, 10V 15mOhm @ 4.5A, 10V 2V @ 500µA 64 nC @ 10 V +20V, -25V 2900 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
TK42E12N1,S1X Toshiba Semiconductor and Storage

TK42E12N1,S1X

MOSFET N CH 120V 88A TO-220

Toshiba Semiconductor and Storage

8
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 88A (Tc) 10V 9.4mOhm @ 21A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3100 pF @ 60 V - 140W (Tc) 150°C (TJ) - - Through Hole TO-220
TK5A55D(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A55D(STA4,Q,M)

MOSFET N-CH 550V 5A TO220SIS

Toshiba Semiconductor and Storage

14
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 5A (Ta) 10V 1.7Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7A45DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK7A45DA(STA4,Q,M)

MOSFET N-CH 450V 6.5A TO220SIS

Toshiba Semiconductor and Storage

9,863
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 450 V 6.5A (Ta) 10V 1.2Ohm @ 3.3A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK5A90E,S4X Toshiba Semiconductor and Storage

TK5A90E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

Toshiba Semiconductor and Storage

25
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 4.5A (Ta) 10V 3.1Ohm @ 2.3A, 10V 4V @ 450µA 20 nC @ 10 V ±30V 950 pF @ 25 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
TK6A55DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A55DA(STA4,Q,M)

MOSFET N-CH 550V 5.5A TO220SIS

Toshiba Semiconductor and Storage

7,094
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 550 V 5.5A (Ta) 10V 1.48Ohm @ 2.8A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK7A50D(STA4,Q,M) Toshiba Semiconductor and Storage

TK7A50D(STA4,Q,M)

MOSFET N-CH 500V 7A TO220SIS

Toshiba Semiconductor and Storage

22
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Ta) 10V 1.22Ohm @ 3.5A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK6A53D(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A53D(STA4,Q,M)

MOSFET N-CH 525V 6A TO220SIS

Toshiba Semiconductor and Storage

2,947
Datasheet π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 525 V 6A (Ta) 10V 1.3Ohm @ 3A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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