JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TW140Z120C,S1F Toshiba Semiconductor and Storage

TW140Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 14

Toshiba Semiconductor and Storage

65
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 20A (Tc) 18V 191mOhm @ 10A, 18V 5V @ 1mA 24 nC @ 18 V +25V, -10V 691 pF @ 800 V - 107W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW083Z65C,S1F Toshiba Semiconductor and Storage

TW083Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 83

Toshiba Semiconductor and Storage

88
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 118mOhm @ 15A, 18V 5V @ 600µA 28 nC @ 18 V +25V, -10V 873 pF @ 400 V - 111W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW027Z65C,S1F Toshiba Semiconductor and Storage

TW027Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 27

Toshiba Semiconductor and Storage

80
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 58A (Tc) 18V 38mOhm @ 29A, 18V 5V @ 3mA 65 nC @ 18 V +25V, -10V 2288 pF @ 400 V - 156W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW060Z120C,S1F Toshiba Semiconductor and Storage

TW060Z120C,S1F

G3 1200V SIC-MOSFET TO-247-4L 6

Toshiba Semiconductor and Storage

88
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 82mOhm @ 18A, 18V 5V @ 4.2mA 46 nC @ 18 V +25V, -10V 1530 pF @ 800 V - 170W (Tc) 175°C - - Through Hole TO-247-4L(X)
TW015Z65C,S1F Toshiba Semiconductor and Storage

TW015Z65C,S1F

G3 650V SIC-MOSFET TO-247-4L 15

Toshiba Semiconductor and Storage

98
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 22mOhm @ 50A, 18V 5V @ 11.7mA 128 nC @ 18 V +25V, -10V 4850 pF @ 400 V - 342W (Tc) 175°C - - Through Hole TO-247-4L(X)
SSM3J118TU(TE85L) Toshiba Semiconductor and Storage

SSM3J118TU(TE85L)

MOSFET P-CH 30V 1.4A UFM

Toshiba Semiconductor and Storage

44
Datasheet U-MOSII 3-SMD, Flat Leads Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 240mOhm @ 650mA, 10V - - ±20V 137 pF @ 15 V - 500mW (Ta) 150°C (TJ) - - Surface Mount UFM
SSM3J46CTB(TPL3) Toshiba Semiconductor and Storage

SSM3J46CTB(TPL3)

MOSFET P-CH 20V 2A CST3B

Toshiba Semiconductor and Storage

29
Datasheet U-MOSVI 3-SMD, No Lead Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 103mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7 nC @ 4.5 V ±8V 290 pF @ 10 V - - 150°C (TJ) - - Surface Mount CST3B
TK2R4A08QM,S4X Toshiba Semiconductor and Storage

TK2R4A08QM,S4X

UMOS10 TO-220SIS 80V 2.4MOHM

Toshiba Semiconductor and Storage

78
Datasheet U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 2.44mOhm @ 50A, 10V 3.5V @ 2.2mA 179 nC @ 10 V ±20V 13000 pF @ 40 V - 47W (Tc) 175°C - - Through Hole TO-220SIS
SSM3J327R,LF Toshiba Semiconductor and Storage

SSM3J327R,LF

MOSFET P-CH 20V 3.9A SOT23F

Toshiba Semiconductor and Storage

6,138
Datasheet U-MOSVI SOT-23-3 Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.5V, 4.5V 93mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V ±8V 290 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount SOT-23F
TPH1R712MD,L1Q Toshiba Semiconductor and Storage

TPH1R712MD,L1Q

MOSFET P-CH 20V 60A 8SOP

Toshiba Semiconductor and Storage

3,557
Datasheet U-MOSVI 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 4.5V 1.7mOhm @ 30A, 4.5V 1.2V @ 1mA 182 nC @ 5 V ±12V 10900 pF @ 10 V - 78W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
Total 814 Record«Prev1... 3435363738394041...82Next»
FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

Send your target specifications, preferred manufacturer, quantity or reference part number. Our team can help check matching options, availability and quotation details for your sourcing requirement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top