JIEXIN Electronics — Your one-stop global supplier of chips and electronic components.
FILTERED COMPONENT SELECTION

FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TK3R3E08QM,S1X Toshiba Semiconductor and Storage

TK3R3E08QM,S1X

UMOS10 TO-220AB 80V 3.3MOHM

Toshiba Semiconductor and Storage

58
Datasheet U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.3mOhm @ 50A, 10V 3.5V @ 1.3mA 110 nC @ 10 V ±20V 7670 pF @ 40 V - 230W (Tc) 175°C - - Through Hole TO-220
TK8A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK8A65D(STA4,Q,M)

MOSFET N-CH 650V 8A TO220SIS

Toshiba Semiconductor and Storage

38
Datasheet π-MOSVII TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Ta) 10V 840mOhm @ 4A, 10V 4V @ 1mA 25 nC @ 10 V ±30V 1350 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK72E08N1,S1X Toshiba Semiconductor and Storage

TK72E08N1,S1X

MOSFET N-CH 80V 72A TO220

Toshiba Semiconductor and Storage

27
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 72A (Ta) 10V 4.3mOhm @ 36A, 10V 4V @ 1mA 81 nC @ 10 V ±20V 5500 pF @ 40 V - 192W (Tc) 150°C (TJ) - - Through Hole TO-220
TK100E06N1,S1X Toshiba Semiconductor and Storage

TK100E06N1,S1X

MOSFET N CH 60V 100A TO-220

Toshiba Semiconductor and Storage

50
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 10V 2.3mOhm @ 50A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10500 pF @ 30 V - 255W (Tc) 150°C (TJ) - - Through Hole TO-220
TK16A60W,S4VX Toshiba Semiconductor and Storage

TK16A60W,S4VX

MOSFET N-CH 600V 15.8A TO220SIS

Toshiba Semiconductor and Storage

26
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK190A65Z,S4X Toshiba Semiconductor and Storage

TK190A65Z,S4X

MOSFET N-CH 650V 15A TO220SIS

Toshiba Semiconductor and Storage

50
Datasheet DTMOSVI TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
TK14A65W,S5X Toshiba Semiconductor and Storage

TK14A65W,S5X

MOSFET N-CH 650V 13.7A TO220SIS

Toshiba Semiconductor and Storage

47
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 250mOhm @ 6.9A, 10V 3.5V @ 690µA 35 nC @ 10 V ±30V 1300 pF @ 300 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK20A60W,S5VX Toshiba Semiconductor and Storage

TK20A60W,S5VX

MOSFET N-CH 600V 20A TO220SIS

Toshiba Semiconductor and Storage

60
Datasheet DTMOSIV TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK10E60W,S1VX Toshiba Semiconductor and Storage

TK10E60W,S1VX

MOSFET N-CH 600V 9.7A TO220

Toshiba Semiconductor and Storage

66
Datasheet DTMOSIV TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.7A (Ta) 10V 380mOhm @ 4.9A, 10V 3.7V @ 500µA 20 nC @ 10 V ±30V 700 pF @ 300 V - 100W (Tc) 150°C (TJ) - - Through Hole TO-220
TK155E65Z,S1X Toshiba Semiconductor and Storage

TK155E65Z,S1X

650V DTMOS VI TO-220 155MOHM

Toshiba Semiconductor and Storage

45
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 150W (Tc) 150°C - - Through Hole TO-220
Total 814 Record«Prev1... 2122232425262728...82Next»
FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

PART MATCHING & SOURCING

Need Help Narrowing Down the Right FETs, MOSFETs Part?

Send your target specifications, preferred manufacturer, quantity or reference part number. Our team can help check matching options, availability and quotation details for your sourcing requirement.

BOM BOM Phone +86-138 0989 9356 Email info@jx-icsource.com Cart Shopping Cart Account My Account Back To Top