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FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TW045N120C,S1F Toshiba Semiconductor and Storage

TW045N120C,S1F

G3 1200V SIC-MOSFET TO-247 45MO

Toshiba Semiconductor and Storage

71
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 59mOhm @ 20A, 18V 5V @ 6.7mA 57 nC @ 18 V +25V, -10V 1969 pF @ 800 V - 182W (Tc) 175°C - - Through Hole TO-247
SSM6G18NU,LF Toshiba Semiconductor and Storage

SSM6G18NU,LF

MOSFET P-CH 20V 2A 6UDFN

Toshiba Semiconductor and Storage

785
Datasheet - 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.5V, 4.5V 112mOhm @ 1A, 4.5V 1V @ 1mA 4.6 nC @ 4.5 V ±8V 270 pF @ 10 V Schottky Diode (Isolated) 1W (Ta) 150°C (TJ) - - Surface Mount 6-µDFN (2x2)
SSM6J503NU,LF Toshiba Semiconductor and Storage

SSM6J503NU,LF

MOSFET P-CH 20V 6A 6UDFNB

Toshiba Semiconductor and Storage

820
Datasheet U-MOSVI 6-WDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.5V, 4.5V 32.4mOhm @ 3A, 4.5V 1V @ 1mA 12.8 nC @ 10 V ±8V 840 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 6-UDFNB (2x2)
SSM6J216FE,LF Toshiba Semiconductor and Storage

SSM6J216FE,LF

MOSFET P-CHANNEL 12V 4.8A ES6

Toshiba Semiconductor and Storage

379
Datasheet U-MOSVI SOT-563, SOT-666 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12 V 4.8A (Ta) 1.5V, 4.5V 32mOhm @ 3.5A, 4.5V 1V @ 1mA 12.7 nC @ 4.5 V ±8V 1040 pF @ 12 V - 700mW (Ta) 150°C - - Surface Mount ES6
TK30E06N1,S1X Toshiba Semiconductor and Storage

TK30E06N1,S1X

MOSFET N-CH 60V 43A TO220

Toshiba Semiconductor and Storage

69
Datasheet U-MOSVIII-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Ta) 10V 15mOhm @ 15A, 10V 4V @ 200µA 16 nC @ 10 V ±20V 1050 pF @ 30 V - 53W (Tc) 150°C (TJ) - - Through Hole TO-220
TK1K0A60F,S4X Toshiba Semiconductor and Storage

TK1K0A60F,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

67
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Ta) 10V 1Ohm @ 3.8A, 10V 4V @ 770µA 24 nC @ 10 V ±30V 890 pF @ 300 V - 40W (Tc) 150°C - - Through Hole TO-220SIS
TK3R1A04PL,S4X Toshiba Semiconductor and Storage

TK3R1A04PL,S4X

MOSFET N-CH 40V 82A TO220SIS

Toshiba Semiconductor and Storage

77
Datasheet U-MOSIX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 4.5V 2.4V @ 500µA 63.4 nC @ 10 V ±20V 4670 pF @ 20 V - 36W (Tc) 175°C (TJ) - - Through Hole TO-220SIS
TK5R3A06PL,S4X Toshiba Semiconductor and Storage

TK5R3A06PL,S4X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

75
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 4.5V, 10V 5.3mOhm @ 28A, 10V 2.5V @ 300µA 36 nC @ 10 V ±20V 2380 pF @ 30 V - 36W (Tc) 175°C - - Through Hole TO-220SIS
TK4R3A06PL,S4X Toshiba Semiconductor and Storage

TK4R3A06PL,S4X

MOSFET N-CH 60V 68A TO220SIS

Toshiba Semiconductor and Storage

54
Datasheet U-MOSIX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 68A (Tc) 4.5V, 10V 7.2mOhm @ 15A, 4.5V 2.5V @ 500µA 48.2 nC @ 10 V ±20V 3280 pF @ 30 V - 36W (Tc) 175°C (TJ) - - Through Hole TO-220SIS
TK650A60F,S4X Toshiba Semiconductor and Storage

TK650A60F,S4X

MOSFET N-CH 600V 11A TO220SIS

Toshiba Semiconductor and Storage

74
Datasheet U-MOSIX TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1.16mA 34 nC @ 10 V ±30V 1320 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
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FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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