FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TW060N120C,S1F G3 1200V SIC-MOSFET TO-247 60MO Toshiba Semiconductor and Storage	15	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	78mOhm @ 18A, 18V	5V @ 4.2mA	46 nC @ 18 V	+25V, -10V	1530 pF @ 800 V	-	170W (Tc)	175°C	-	-	Through Hole	TO-247
TW027N65C,S1F G3 650V SIC-MOSFET TO-247 27MOH Toshiba Semiconductor and Storage	35	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	37mOhm @ 29A, 18V	5V @ 3mA	65 nC @ 18 V	+25V, -10V	2288 pF @ 400 V	-	156W (Tc)	175°C	-	-	Through Hole	TO-247
TW030N120C,S1F G3 1200V SIC-MOSFET TO-247 30MO Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	40mOhm @ 30A, 18V	5V @ 13mA	82 nC @ 18 V	+25V, -10V	2925 pF @ 800 V	-	249W (Tc)	175°C	-	-	Through Hole	TO-247
TW015N65C,S1F G3 650V SIC-MOSFET TO-247 15MOH Toshiba Semiconductor and Storage	52	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	100A (Tc)	18V	21mOhm @ 50A, 18V	5V @ 11.7mA	128 nC @ 18 V	+25V, -10V	4850 pF @ 400 V	-	342W (Tc)	175°C	-	-	Through Hole	TO-247
SSM6K404TU,LF MOSFET N-CH 20V 3A UF6 Toshiba Semiconductor and Storage	37	RFQ	Datasheet	-	6-SMD, Flat Leads	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	1.5V, 4V	55mOhm @ 2A, 4V	1V @ 1mA	5.9 nC @ 4 V	±10V	400 pF @ 10 V	-	500mW (Ta)	150°C	-	-	Surface Mount	UF6
TK35A08N1,S4X MOSFET N-CH 80V 35A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	35A (Tc)	10V	12.2mOhm @ 17.5A, 10V	4V @ 300µA	25 nC @ 10 V	±20V	1700 pF @ 40 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK380A60Y,S4X MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	43	RFQ	Datasheet	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Tc)	10V	380mOhm @ 4.9A, 10V	4V @ 360µA	20 nC @ 10 V	±30V	590 pF @ 300 V	-	30W	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5R1A08QM,S4X UMOS10 TO-220SIS 80V 5.1MOHM Toshiba Semiconductor and Storage	43	RFQ	Datasheet	U-MOSX-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	70A (Tc)	6V, 10V	5.1mOhm @ 35A, 10V	3.5V @ 700µA	54 nC @ 10 V	±20V	3980 pF @ 40 V	-	45W (Tc)	175°C	-	-	Through Hole	TO-220SIS
TK34E10N1,S1X MOSFET N-CH 100V 75A TO220 Toshiba Semiconductor and Storage	35	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	75A (Tc)	10V	9.5mOhm @ 17A, 10V	4V @ 500µA	38 nC @ 10 V	±20V	2600 pF @ 50 V	-	103W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK7A60W5,S5VX MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	46	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	650mOhm @ 3.5A, 10V	4.5V @ 350µA	16 nC @ 10 V	±30V	490 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.