FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK17A80W,S4X MOSFET N-CH 800V 17A TO220SIS Toshiba Semiconductor and Storage	91	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK25A60X,S5X MOSFET N-CH 600V 25A TO220SIS Toshiba Semiconductor and Storage	34	RFQ	Datasheet	DTMOSIV-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	125mOhm @ 7.5A, 10V	3.5V @ 1.2mA	40 nC @ 10 V	±30V	2400 pF @ 300 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK110E65Z,S1X 650V DTMOS VI TO-220 110MOHM Toshiba Semiconductor and Storage	50	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	190W (Tc)	150°C	-	-	Through Hole	TO-220
TK17E80W,S1X MOSFET N-CHANNEL 800V 17A TO220 Toshiba Semiconductor and Storage	44	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	180W (Tc)	150°C	-	-	Through Hole	TO-220
TK090E65Z,S1X 650V DTMOS VI TO-220 90MOHM Toshiba Semiconductor and Storage	61	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-220
TK20J60W,S1VE X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	33	RFQ	Datasheet	-	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C	-	-	Through Hole	TO-3P(N)
TK31E60X,S1X MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	87	RFQ	Datasheet	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK31N60X,S1F MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	26	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK090N65Z,S1F MOSFET N-CH 650V 30A TO247 Toshiba Semiconductor and Storage	26	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	30A (Ta)	10V	90mOhm @ 15A, 10V	4V @ 1.27mA	47 nC @ 10 V	±30V	2780 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247
TK28N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	48	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	130mOhm @ 13.8A, 10V	4.5V @ 1.6mA	90 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.