FETs, MOSFETs

Review FETs, MOSFETs FETs, MOSFETs components in this filtered selection. Compare manufacturer information, availability, pricing, datasheets and key specifications to narrow down suitable parts for your application.

If the exact part or specification you need is not listed, send the manufacturer part number, target parameters and quantity to JIEXIN Electronics for sourcing and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK31N60W5,S1VF MOSFET N-CH 600V 30.8A TO247 Toshiba Semiconductor and Storage	48	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	99mOhm @ 15.4A, 10V	4.5V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TW107N65C,S1F G3 650V SIC-MOSFET TO-247 107MO Toshiba Semiconductor and Storage	68	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	145mOhm @ 10A, 18V	5V @ 1.2mA	21 nC @ 18 V	+25V, -10V	600 pF @ 400 V	-	76W (Tc)	175°C	-	-	Through Hole	TO-247
TK39A60W,S4VX MOSFET N-CH 600V 38.8A TO220SIS Toshiba Semiconductor and Storage	54	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	110 nC @ 10 V	±30V	4100 pF @ 300 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK62N60X,S1F MOSFET N-CH 600V 61.8A TO247 Toshiba Semiconductor and Storage	82	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK49N65W5,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	57mOhm @ 24.6A, 10V	4.5V @ 2.5mA	185 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
TK39J60W5,S1VQ MOSFET N-CH 600V 38.8A TO3P Toshiba Semiconductor and Storage	31	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	135 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
TK31Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	26	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)
TK49N65W,S1F PB-F POWER MOSFET TRANSISTOR TO2 Toshiba Semiconductor and Storage	6	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	49.2A (Ta)	10V	55mOhm @ 24.6A, 10V	3.5V @ 2.5mA	160 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247
TW048N65C,S1F G3 650V SIC-MOSFET TO-247 48MOH Toshiba Semiconductor and Storage	29	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	40A (Tc)	18V	65mOhm @ 20A, 18V	5V @ 1.6mA	41 nC @ 18 V	+25V, -10V	1362 pF @ 400 V	-	132W (Tc)	175°C	-	-	Through Hole	TO-247
TK62Z60X,S1F X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	11	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	61.8A (Ta)	10V	40mOhm @ 21A, 10V	3.5V @ 3.1mA	135 nC @ 10 V	±30V	6500 pF @ 300 V	-	400W (Tc)	150°C	-	-	Through Hole	TO-247-4L(T)

FAQ

Frequently Asked Questions

What are FETs, MOSFETs components used for?

FETs, MOSFETs components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right FETs, MOSFETs part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find FETs, MOSFETs parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.