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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
1N4938 Fairchild Semiconductor

1N4938

DIODE GEN PURP 200V 500MA DO35

Fairchild Semiconductor

57,593
Datasheet - DO-204AH, DO-35, Axial Bulk Obsolete Standard 200 V 500mA 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 nA @ 75 V 5pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) 175°C (Max)
STPSC6H065BY-TR STMicroelectronics

STPSC6H065BY-TR

DIODE SIL CARBIDE 650V 6A DPAK

STMicroelectronics

7,471
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A - No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz Automotive AEC-Q101 Surface Mount DPAK -40°C ~ 175°C
IDK10G65C5XTMA1 Infineon Technologies

IDK10G65C5XTMA1

DIODE SIL CARB 650V 10A TO263-2

Infineon Technologies

5,530
Datasheet CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 10A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 1.7 mA @ 650 V 300pF @ 1V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
WNSC2D08650DJ WeEn Semiconductors

WNSC2D08650DJ

DIODE SIL CARBIDE 650V 8A DPAK

WeEn Semiconductors

7,463
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 260pF @ 1V, 1MHz - - Surface Mount DPAK 175°C
BYQ60W-600PT2Q WeEn Semiconductors

BYQ60W-600PT2Q

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors

569
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C
BYV60W-600PT2Q WeEn Semiconductors

BYV60W-600PT2Q

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors

468
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 1.7 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 79 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C
SCS304APC9 Rohm Semiconductor

SCS304APC9

DIODE SILICON CARBIDE 650V 4A

Rohm Semiconductor

862
Datasheet - TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 200pF @ 1V, 1MHz - - Through Hole - 175°C (Max)
RFUS20NS4STL Rohm Semiconductor

RFUS20NS4STL

DIODE GEN PURP 430V 20A LPDS

Rohm Semiconductor

259
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 430 V 20A - Fast Recovery =< 500ns, > 200mA (Io) - - - - - Surface Mount LPDS 150°C (Max)
RBQ30NS45BTL Rohm Semiconductor

RBQ30NS45BTL

DIODE SCHOTTKY 45V 30A LPDS

Rohm Semiconductor

706
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 30A 590 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 350 µA @ 45 V - - - Surface Mount LPDS 150°C
WNSC2D10650Q WeEn Semiconductors

WNSC2D10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

995
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 310pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C
MUR3040 onsemi

MUR3040

DIODE GEN PURP 400V 15A TO218

onsemi

7,505
Datasheet - TO-218-2 Bulk Active Standard 400 V 30A 1.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 35 µA @ 400 V 175pF @ 4V, 1MHz - - Through Hole TO-218 -65°C ~ 175°C
SDT05S60 Infineon Technologies

SDT05S60

DIODE SIL CARB 600V 5A TO220-2

Infineon Technologies

2,481
Datasheet CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 5A 1.7 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 170pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
RHRU5060 Harris Corporation

RHRU5060

DIODE AVALANCHE 600V 50A TO218

Harris Corporation

734
Datasheet - TO-218-1 Bulk Active Avalanche 600 V 50A 2.1 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 500 µA @ 600 V - - - Chassis Mount TO-218 -65°C ~ 175°C
WNSC6D166506Q WeEn Semiconductors

WNSC6D166506Q

DIODE SIL CARB 650V 16A TO220AC

WeEn Semiconductors

2,976
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 16A 1.45 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 780pF @ 1V, 1MHz - - Through Hole TO-220AC 175°C
RURG8080 Harris Corporation

RURG8080

DIODE AVALANCHE 800V 80A TO247-2

Harris Corporation

703
Datasheet - TO-247-2 Bulk Active Avalanche 800 V 80A 1.9 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 500 µA @ 800 V - - - Through Hole TO-247-2 -65°C ~ 175°C
RURG8070 Harris Corporation

RURG8070

DIODE AVALANCHE 700V 80A TO247-2

Harris Corporation

450
Datasheet - TO-247-2 Bulk Active Avalanche 700 V 80A 1.9 V @ 80 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 500 µA @ 700 V - - - Through Hole TO-247-2 -65°C ~ 175°C
BYC30W-600PT2Q WeEn Semiconductors

BYC30W-600PT2Q

DIODE GEN PURP 600V 30A TO247-2

WeEn Semiconductors

1,787
Datasheet - TO-247-2 Bulk Active Standard 600 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 34 ns 10 µA @ 600 V - - - Through Hole TO-247-2 175°C (Max)
PSDH60120L1_T0_00001 Panjit International Inc.

PSDH60120L1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,500
Datasheet - TO-247-2 Tube Active Standard 1200 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 330 ns 250 µA @ 1200 V - - - Through Hole TO-247AD-2 -55°C ~ 150°C
S3D08065L SMC Diode Solutions

S3D08065L

DIODE SIL CARBIDE 650V 24A 5DFN

SMC Diode Solutions

1,200
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 24A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 650pF @ 0V, 1MHz - - Surface Mount 5-DFN (8x8) -55°C ~ 175°C
BYC30W-1200PQ WeEn Semiconductors

BYC30W-1200PQ

DIODE GEN PURP 1.2KV 30A TO247-2

WeEn Semiconductors

386
Datasheet - TO-247-2 Tube Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 250 µA @ 1200 V - - - Through Hole TO-247-2 175°C (Max)
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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