Single Diodes
Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.
For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CRU24730-600 SLRECTIFIER-ULTRA FAST <100 |
1,440 |
|
Datasheet | - | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MBR30170MFST3GDIODE SCHOTTKY 170V 30A 5DFN |
5,000 |
|
Datasheet | - | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | Schottky | 170 V | 30A | 890 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 170 V | 821pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
TRS6V65H,LQG3 SIC-SBD 650V 6A DFN8X8 |
4,803 |
|
Datasheet | - | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
FESF16JTHE3_A/PDIODE GEN PURP 600V 16A ITO220AC |
1,995 |
|
Datasheet | - | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 16A | 1.5 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | ITO-220AC | -65°C ~ 150°C |
|
SF3006PTDIODE GEN PURP 400V 30A TO247AD |
806 |
|
Datasheet | - | TO-247-3 | Tube | Active | Standard | 400 V | 30A | 1.3 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 175pF @ 4V, 1MHz | - | - | Through Hole | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
YQ30NL10SETLTRENCH MOS STRUCTURE, 100V, 30A, |
990 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Schottky | 100 V | 30A | 860 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | - | - | - | Surface Mount | TO-263L | 150°C |
|
VS-EPH3007L-N3DIODE GEN PURP 650V 30A TO247AD |
390 |
|
Datasheet | - | TO-247-2 | Tube | Active | Standard | 650 V | 30A | 2.1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 37 ns | 30 µA @ 650 V | - | - | - | Through Hole | TO-247AD | -55°C ~ 175°C |
|
VS-EPU3006LHN3DIODE GEN PURP 600V 30A TO247AD |
499 |
|
Datasheet | FRED Pt® | TO-247-2 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247AD | -55°C ~ 175°C |
|
TRS6E65H,S1QG3 SIC-SBD 650V 6A TO-220-2L |
194 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
|
BSDH08G65E2DIODE SCHOT SIC 650V 8A TO220-2 |
3,000 |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 267pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
VS-25ETS08S-M3DIODE GEN PURP 800V 25A TO263AB |
7,049 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Standard | 800 V | 25A | 1.14 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
SDS065J006D3-ISARHDIODE 650V-6A TO252-2L |
200 |
|
Datasheet | Sanan TO263 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 310pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-2L | -55°C ~ 175°C |
|
VS-20ETF06STRL-M3DIODE GEN PURP 600V 20A TO263AB |
6,202 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 600 V | 20A | 1.3 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 160 ns | 100 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
|
|
IDW50E60FKSA1DIODE GEN PURP 600V 80A TO247-3 |
240 |
|
Datasheet | - | TO-247-3 | Tube | Active | Standard | 600 V | 80A | 2 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 115 ns | 40 µA @ 600 V | - | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
|
FFSB0665BDIODE SIL CARB 650V 8A D2PAK-2 |
712 |
|
Datasheet | - | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | - | 40 µA @ 650 V | 259pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
SDS065J010N3-ISATHDIODE 650V-10A TO220N-2L |
290 |
|
Datasheet | Sanan TO220N | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 26A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 556pF @ 0V, 1MHz | - | - | Through Hole | TO-220N-2L | -55°C ~ 175°C |
|
BSDD06G65E2DIODE SIC 650V 6A TO252 |
4,963 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 650 V | 201pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
SDS065J006C3-ISATHDIODE 650V-6A TO220-2L |
200 |
|
Datasheet | Sanan TO220 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 310pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
VS-8EWS12STRL-M3DIODE GEN PURP 1.2KV 8A D-PAK |
2,900 |
|
Datasheet | - | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | Standard | 1200 V | 8A | 1.1 V @ 8 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1200 V | - | - | - | Surface Mount | TO-252AA (DPAK) | -55°C ~ 150°C |
|
SDS065J006E3-ISARHDIODE 650V-6A TO263-2L |
200 |
|
Datasheet | Sanan TO263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 310pF @ 0V, 1MHz | - | - | Surface Mount | TO-263-2L | -55°C ~ 175°C |
Frequently Asked Questions
What are Single Diodes components used for?
Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.
How do I choose the right Single Diodes part?
Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.
Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?
Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.
How can I request pricing and availability?
Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.