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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CRU24730-600 SL Central Semiconductor Corp

CRU24730-600 SL

RECTIFIER-ULTRA FAST <100

Central Semiconductor Corp

1,440
Datasheet - - Tube Active - - - - - - - - - - - - -
MBR30170MFST3G onsemi

MBR30170MFST3G

DIODE SCHOTTKY 170V 30A 5DFN

onsemi

5,000
Datasheet - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active Schottky 170 V 30A 890 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 170 V 821pF @ 1V, 1MHz - - Surface Mount 5-DFN (5x6) (8-SOFL) -55°C ~ 175°C
TRS6V65H,LQ Toshiba Semiconductor and Storage

TRS6V65H,LQ

G3 SIC-SBD 650V 6A DFN8X8

Toshiba Semiconductor and Storage

4,803
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Surface Mount 4-DFN-EP (8x8) 175°C
FESF16JTHE3_A/P Vishay General Semiconductor - Diodes Division

FESF16JTHE3_A/P

DIODE GEN PURP 600V 16A ITO220AC

Vishay General Semiconductor - Diodes Division

1,995
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 16A 1.5 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -65°C ~ 150°C
SF3006PT Taiwan Semiconductor Corporation

SF3006PT

DIODE GEN PURP 400V 30A TO247AD

Taiwan Semiconductor Corporation

806
Datasheet - TO-247-3 Tube Active Standard 400 V 30A 1.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 175pF @ 4V, 1MHz - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
YQ30NL10SETL Rohm Semiconductor

YQ30NL10SETL

TRENCH MOS STRUCTURE, 100V, 30A,

Rohm Semiconductor

990
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 100 V 30A 860 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 100 V - - - Surface Mount TO-263L 150°C
VS-EPH3007L-N3 Vishay General Semiconductor - Diodes Division

VS-EPH3007L-N3

DIODE GEN PURP 650V 30A TO247AD

Vishay General Semiconductor - Diodes Division

390
Datasheet - TO-247-2 Tube Active Standard 650 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 37 ns 30 µA @ 650 V - - - Through Hole TO-247AD -55°C ~ 175°C
VS-EPU3006LHN3 Vishay General Semiconductor - Diodes Division

VS-EPU3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

499
Datasheet FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
TRS6E65H,S1Q Toshiba Semiconductor and Storage

TRS6E65H,S1Q

G3 SIC-SBD 650V 6A TO-220-2L

Toshiba Semiconductor and Storage

194
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.35 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
BSDH08G65E2 Bourns Inc.

BSDH08G65E2

DIODE SCHOT SIC 650V 8A TO220-2

Bourns Inc.

3,000
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 267pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-25ETS08S-M3 Vishay General Semiconductor - Diodes Division

VS-25ETS08S-M3

DIODE GEN PURP 800V 25A TO263AB

Vishay General Semiconductor - Diodes Division

7,049
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 800 V 25A 1.14 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 800 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
SDS065J006D3-ISARH Luminus Devices Inc.

SDS065J006D3-ISARH

DIODE 650V-6A TO252-2L

Luminus Devices Inc.

200
Datasheet Sanan TO263 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 310pF @ 0V, 1MHz - - Surface Mount TO-252-2L -55°C ~ 175°C
VS-20ETF06STRL-M3 Vishay General Semiconductor - Diodes Division

VS-20ETF06STRL-M3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

6,202
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
IDW50E60FKSA1 Infineon Technologies

IDW50E60FKSA1

DIODE GEN PURP 600V 80A TO247-3

Infineon Technologies

240
Datasheet - TO-247-3 Tube Active Standard 600 V 80A 2 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3 -40°C ~ 175°C
FFSB0665B onsemi

FFSB0665B

DIODE SIL CARB 650V 8A D2PAK-2

onsemi

712
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 6 A No Recovery Time > 500mA (Io) - 40 µA @ 650 V 259pF @ 1V, 100kHz - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
SDS065J010N3-ISATH Luminus Devices Inc.

SDS065J010N3-ISATH

DIODE 650V-10A TO220N-2L

Luminus Devices Inc.

290
Datasheet Sanan TO220N TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 26A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 556pF @ 0V, 1MHz - - Through Hole TO-220N-2L -55°C ~ 175°C
BSDD06G65E2 Bourns Inc.

BSDD06G65E2

DIODE SIC 650V 6A TO252

Bourns Inc.

4,963
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 650 V 201pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
SDS065J006C3-ISATH Luminus Devices Inc.

SDS065J006C3-ISATH

DIODE 650V-6A TO220-2L

Luminus Devices Inc.

200
Datasheet Sanan TO220 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 310pF @ 0V, 1MHz - - Through Hole TO-220-2L -55°C ~ 175°C
VS-8EWS12STRL-M3 Vishay General Semiconductor - Diodes Division

VS-8EWS12STRL-M3

DIODE GEN PURP 1.2KV 8A D-PAK

Vishay General Semiconductor - Diodes Division

2,900
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 1200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
SDS065J006E3-ISARH Luminus Devices Inc.

SDS065J006E3-ISARH

DIODE 650V-6A TO263-2L

Luminus Devices Inc.

200
Datasheet Sanan TO263 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 310pF @ 0V, 1MHz - - Surface Mount TO-263-2L -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

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Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

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