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Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-35EPF12LHM3 Vishay General Semiconductor - Diodes Division

VS-35EPF12LHM3

DIODE GEN PURP 1.2KV 35A TO247AD

Vishay General Semiconductor - Diodes Division

169
Datasheet - TO-247-2 Tube Active Standard 1200 V 35A 1.47 V @ 35 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AD -40°C ~ 150°C
MSC010SDA120B Microchip Technology

MSC010SDA120B

DIODE SIL CARB 1.2KV 10A TO247

Microchip Technology

1,511
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns - - - - Through Hole TO-247 -
JAN1N5552 Microchip Technology

JAN1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

152
Datasheet - B, Axial Bulk Active Standard 600 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
SCS210AGC17 Rohm Semiconductor

SCS210AGC17

DIODE SIC 650V 10A TO220ACFP

Rohm Semiconductor

1,918
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 365pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
STTH3006PI STMicroelectronics

STTH3006PI

DIODE GEN PURP 600V 30A DOP3I

STMicroelectronics

444
Datasheet - DOP3I-2 Insulated (Straight Leads) Tube Active Standard 600 V 30A 1.85 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 25 µA @ 600 V - - - Through Hole DOP3I 175°C (Max)
VS-E5PH6012LHN3 Vishay General Semiconductor - Diodes Division

VS-E5PH6012LHN3

DIODE GEN PURP 1.2KV 60A TO247AD

Vishay General Semiconductor - Diodes Division

334
Datasheet - TO-247-2 Tube Active Standard 1200 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 50 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
VS-E5PH6012L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PH6012L-N3

DIODE GEN PURP 1.2KV 60A TO247AD

Vishay General Semiconductor - Diodes Division

113
Datasheet FRED Pt® TO-247-2 Tube Active Standard 1200 V 60A 2.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
S4D08120E SMC Diode Solutions

S4D08120E

DIODE SIL CARBIDE 1.2KV 8A DPAK

SMC Diode Solutions

2,606
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 15 µA @ 1200 V 560pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
SCS206AGC17 Rohm Semiconductor

SCS206AGC17

DIODE SIL CARB 650V 6A TO220ACFP

Rohm Semiconductor

638
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
VS-E5PX6012L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PX6012L-N3

DIODE GEN PURP 1.2KV 60A TO247AD

Vishay General Semiconductor - Diodes Division

165
Datasheet FRED Pt® TO-247-2 Tube Active Standard 1200 V 60A 3.15 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
1N5619 Microchip Technology

1N5619

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

301
Datasheet - A, Axial Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
VS-40EPS08-M3 Vishay General Semiconductor - Diodes Division

VS-40EPS08-M3

DIODE GP 800V 40A TO247AC

Vishay General Semiconductor - Diodes Division

678
Datasheet - TO-247-2 Tube Active Standard 800 V 40A 1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 800 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-65PQ015-N3 Vishay General Semiconductor - Diodes Division

VS-65PQ015-N3

DIODE SCHOTTKY 15V 65A TO247AC

Vishay General Semiconductor - Diodes Division

103
Datasheet - TO-247-3 Tube Active Schottky 15 V 65A 500 mV @ 65 A Fast Recovery =< 500ns, > 200mA (Io) - 18 mA @ 15 V - - - Through Hole TO-247AC -55°C ~ 125°C
VS-E5PH7512L-N3 Vishay General Semiconductor - Diodes Division

VS-E5PH7512L-N3

DIODE GEN PURP 1.2KV 75A TO247AD

Vishay General Semiconductor - Diodes Division

3,490
Datasheet FRED Pt® Gen 5 TO-247-2 Tube Active Standard 1200 V 75A 2.6 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 145 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
RRD20TJ10SGC9 Rohm Semiconductor

RRD20TJ10SGC9

DIODE GEN PURP 1KV 20A TO220ACFP

Rohm Semiconductor

219
Datasheet - TO-220-2 Full Pack Tube Active Standard 1000 V 20A 1.05 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V - - - Through Hole TO-220ACFP 150°C
C3D06065E Wolfspeed, Inc.

C3D06065E

DIODE SIL CARB 650V 20A TO252-2

Wolfspeed, Inc.

1,387
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Not For New Designs SiC (Silicon Carbide) Schottky 650 V 20A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 295pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
IDH08SG60CXKSA2 Infineon Technologies

IDH08SG60CXKSA2

DIODE SIL CARB 600V 8A TO220-2-1

Infineon Technologies

1,662
Datasheet CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 8A 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
VS-30EPF12-M3 Vishay General Semiconductor - Diodes Division

VS-30EPF12-M3

DIODE GP 1.2KV 30A TO247AC

Vishay General Semiconductor - Diodes Division

443
Datasheet - TO-247-2 Tube Active Standard 1200 V 30A 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-30EPF06-M3 Vishay General Semiconductor - Diodes Division

VS-30EPF06-M3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

500
Datasheet - TO-247-2 Tube Active Standard 600 V 30A 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 600 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
C6D10065G-TR Wolfspeed, Inc.

C6D10065G-TR

DIODE SIL CARB 650V 36A TO263-2

Wolfspeed, Inc.

1,525
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 36A 1.4 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 611pF @ 0V, 1MHz - - Surface Mount TO-263-2 -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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