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ELECTRONIC COMPONENTS

Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-40EPF12-M3 Vishay General Semiconductor - Diodes Division

VS-40EPF12-M3

DIODE GP 1.2KV 40A TO247AC

Vishay General Semiconductor - Diodes Division

231
Datasheet - TO-247-2 Tube Active Standard 1200 V 40A 1.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
1N5806USE3 Microchip Technology

1N5806USE3

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

148
Datasheet - SQ-MELF, A Bulk Active Standard 150 V 1A 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
VS-HFA08PB120-N3 Vishay General Semiconductor - Diodes Division

VS-HFA08PB120-N3

DIODE GP 1.2KV 8A TO247AC

Vishay General Semiconductor - Diodes Division

500
Datasheet HEXFRED® TO-247-2 Tube Active Standard 1200 V 8A 3.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 10 µA @ 1200 V - - - Through Hole TO-247AC Modified -55°C ~ 150°C
STPSC10H12WL STMicroelectronics

STPSC10H12WL

DIODE SIL CARB 1.2KV 10A DO247

STMicroelectronics

244
Datasheet ECOPACK®2 DO-247-2 (Straight Leads) Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz - - Through Hole DO-247 -40°C ~ 175°C
VS-25FR40 Vishay General Semiconductor - Diodes Division

VS-25FR40

DIODE GEN PURP 400V 25A DO203AA

Vishay General Semiconductor - Diodes Division

101
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 25A 1.3 V @ 78 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
CDLL5819 Microchip Technology

CDLL5819

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

144
Datasheet - DO-213AB, MELF Bulk Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz - - Surface Mount DO-213AB -65°C ~ 125°C
STPSC10H12DY STMicroelectronics

STPSC10H12DY

DIODE SIL CARB 1.2KV 10A TO220AC

STMicroelectronics

125
Datasheet ECOPACK® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1200 V 725pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
1N5617US Microchip Technology

1N5617US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

608
Datasheet - SQ-MELF, A Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
VS-60APU02-N3 Vishay General Semiconductor - Diodes Division

VS-60APU02-N3

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

438
Datasheet FRED Pt® TO-247-3 Tube Active Standard 200 V 60A 1.08 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 28 ns 50 µA @ 200 V - - - Through Hole TO-247AC -55°C ~ 175°C
SCS210AJTLL Rohm Semiconductor

SCS210AJTLL

DIODE SIL CARB 650V 10A TO263AB

Rohm Semiconductor

1,249
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.55 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 365pF @ 1V, 1MHz - - Surface Mount TO-263AB 175°C (Max)
STTH6012W STMicroelectronics

STTH6012W

DIODE GEN PURP 1.2KV 60A DO247

STMicroelectronics

4,917
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 1200 V 60A 2.25 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 30 µA @ 1200 V - - - Through Hole DO-247 175°C (Max)
GD20MPS12A GeneSiC Semiconductor

GD20MPS12A

DIODE SIL CARB 1.2KV 42A TO220-2

GeneSiC Semiconductor

2,307
Datasheet SiC Schottky MPS™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 42A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 737pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-65EPF12LHM3 Vishay General Semiconductor - Diodes Division

VS-65EPF12LHM3

DIODE GEN PURP 1.2KV 65A TO247AD

Vishay General Semiconductor - Diodes Division

140
Datasheet - TO-247-2 Tube Active Standard 1200 V 65A 1.42 V @ 65 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AD -40°C ~ 150°C
FFSP10120A onsemi

FFSP10120A

DIODE SIL CARB 1.2KV 10A TO220L

onsemi

689
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.75 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 1200 V 612pF @ 1V, 100kHz - - Through Hole TO-220-2L -55°C ~ 175°C
JANTX1N5804 Microchip Technology

JANTX1N5804

DIODE GEN PURP 100V 1A AXIAL

Microchip Technology

148
Datasheet - A, Axial Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5711-1 Microchip Technology

1N5711-1

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

836
Datasheet - DO-204AH, DO-35, Axial Bulk Active Schottky 70 V 33mA 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
VS-40HF10 Vishay General Semiconductor - Diodes Division

VS-40HF10

DIODE GEN PURP 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

102
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
SCS205KGC17 Rohm Semiconductor

SCS205KGC17

DIODE SIC 1.2KV 5A TO220ACFP

Rohm Semiconductor

740
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 1200 V 270pF @ 1V, 1MHz - - Through Hole TO-220ACFP 175°C
DPG60I400HA IXYS

DPG60I400HA

DIODE GEN PURP 400V 60A TO247

IXYS

284
Datasheet HiPerFRED™ TO-247-2 Tube Active Standard 400 V 60A 1.47 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 1 µA @ 400 V - - - Through Hole TO-247 -55°C ~ 175°C
C3D08065I Wolfspeed, Inc.

C3D08065I

DIODE SIL CARB 650V 16.5A TO220

Wolfspeed, Inc.

178
Datasheet Z-Rec® TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 16.5A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 441pF @ 0V, 1MHz - - Through Hole TO-220-2 Isolated Tab -55°C ~ 175°C
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FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

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Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.

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