Single Diodes

Explore Single Diodes parts from multiple manufacturers, with model information, availability, datasheets and technical specifications for engineering and purchasing.

For parts that are not shown in the list, send the manufacturer part number, quantity or BOM to JIEXIN Electronics. Our team can assist with availability checks and quotation support.

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STPSC6H065DLF DIODE SIL CARB 650V 6A POWERFLAT STMicroelectronics	10,686	RFQ	Datasheet	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	350pF @ 0V, 1MHz	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
VS-60EPU06L-N3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	168	RFQ	Datasheet	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	60A	1.68 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	81 ns	50 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
STTH1512W DIODE GEN PURP 1.2KV 15A DO247 STMicroelectronics	380	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	15A	2.1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	105 ns	15 µA @ 1200 V	-	-	-	Through Hole	DO-247	175°C (Max)
VS-20ETF06SLHM3 DIODE GEN PURP 600V 20A TO263AB Vishay General Semiconductor - Diodes Division	5,516	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	20A	1.67 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-40°C ~ 150°C
VS-E5TH3012S2L-M3 DIODE GEN PURP 1.2KV 30A TO263AB Vishay General Semiconductor - Diodes Division	1,046	RFQ	Datasheet	FRED Pt® G5	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	113 ns	50 µA @ 1200 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
STTH30R06PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	2,646	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	30A	1.85 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	-	-	Through Hole	DOP3I	175°C (Max)
VS-8EWS16STR-M3 DIODE GEN PURP 1.6KV 8A D-PAK Vishay General Semiconductor - Diodes Division	3,778	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Standard	1600 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
VS-E5TH3012S2LHM3 DIODE GEN PURP 1.2KV 30A TO263AB Vishay General Semiconductor - Diodes Division	176	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	30A	2.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	113 ns	50 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-3C04ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,518	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 650 V	175pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
DHG10I1200PM DIODE GP 1.2KV 10A TO220ACFP IXYS	190	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	Standard	1200 V	10A	2.69 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	15 µA @ 1200 V	-	-	-	Through Hole	TO-220ACFP	-55°C ~ 150°C
STTH3012WL DIODE GP 1.2KV 30A DO247 LL STMicroelectronics	569	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	2.25 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1200 V	-	-	-	Through Hole	DO-247 LL	175°C
MSC010SDA070B DIODE SIL CARBIDE 700V 24A TO247 Microchip Technology	122	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	24A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 700 V	353pF @ 1V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
C3D06060G-TR DIODE SIL CARB 600V 19A TO263-2 Wolfspeed, Inc.	4,800	RFQ	Datasheet	Z-Rec®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	19A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	-	50 µA @ 600 V	295pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
DSI30-08AS-TRL DIODE GEN PURP 800V 30A TO263AA IXYS	2,782	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	800 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 800 V	10pF @ 400V, 1MHz	-	-	Surface Mount	TO-263AA	-40°C ~ 175°C
IDW40E65D2FKSA1 DIODE GP 650V 80A TO247-3-1 Infineon Technologies	2,289	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	650 V	80A	2.3 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	40 µA @ 650 V	-	-	-	Through Hole	PG-TO247-3-1	-40°C ~ 175°C
S4D05120E DIODE SIL CARBIDE 1.2KV 5A DPAK SMC Diode Solutions	2,432	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1200 V	302pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
STPSC8H065B-TR DIODE SIL CARBIDE 650V 8A DPAK STMicroelectronics	13,754	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	414pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-40°C ~ 175°C
VS-20ETF12THM3 DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division	848	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	20A	1.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	100 µA @ 1200 V	-	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 150°C
C6D06065G-TR DIODE SIL CARB 650V 23A TO263-2 Wolfspeed, Inc.	2,423	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23A	1.4 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	393pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
C6D06065Q-TR DIODE SIL CARBIDE 650V 21A 4QFN Wolfspeed, Inc.	2,173	RFQ	Datasheet	-	4-PowerVQFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	21A	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	-	20 µA @ 650 V	393pF @ 0V, 1MHz	-	-	Surface Mount	4-QFN (8x8)	-55°C ~ 175°C

FAQ

Frequently Asked Questions

What are Single Diodes components used for?

Single Diodes components are used in a wide range of electronic equipment and systems. Their exact function depends on the device, circuit design and technical requirements of the application.

How do I choose the right Single Diodes part?

Compare the manufacturer part number, key specifications, package type, operating conditions, availability and datasheet information. For replacement projects, always verify the critical electrical and mechanical parameters before selecting an alternative.

Can JIEXIN Electronics help source obsolete or hard-to-find Single Diodes parts?

Yes. Send us the required manufacturer part number, quantity or BOM. Our sourcing team can help check stock availability, lead time, alternative sourcing options and quotation details.

How can I request pricing and availability?

Submit the part number, manufacturer and required quantity through our RFQ form. JIEXIN Electronics will review your request and provide available stock, pricing and sourcing information.